stn2ne10l n - channel 100v - 0.33 w - 2a - sot-223 stripfet ? power mosfet preliminary data n typical r ds(on) = 0.33 w n exceptional dv/dt capability n avalanche rugged technology n 100 % avalanche tested n application oriented characterization description this power mosfet is the latest development of stmicroelectronics unique "single feature size ? " stip-based process. the resulting transis- tor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. applications n dc motor control (disk drives,etc.) n dc-dc & dc-ac converters n synchronous rectification ? internal schematic diagram type v dss r ds(on) i d stn2ne10l 100 v < 0.4 w 2 a october 1998 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 100 v v dgr drain- gate voltage (r gs = 20 k w ) 100 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c2a i d drain current (continuous) at t c = 100 o c 1.3 a i dm ( ) drain current (pulsed) 8 a p tot total dissipation at t c = 25 o c 2.5 w derating factor 0.02 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 6 v/ns t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 7 a, di/dt 200 a/ m s, v dd v (br)dss , t j t jmax new rds (on) spec. starting from july 98 1 2 2 3 sot-223 1/5
thermal data r thj-pcb r thj-amb t l thermal resistance junction-pc board max thermal resistance junction-ambient max (surface mounted) maximum lead temperature for soldering purpose 50 60 260 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 2a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 20 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 10 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs = 10 v i d = 1a v gs = 5 v i d = 1a 0.33 0.38 0.4 0.45 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 2a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 1 a 1.2 2.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 v 345 45 20 450 60 25 pf pf pf stn2ne10l 2/5
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 50 v i d = 3.5 a r g = 4.7 w v gs = 5 v 7 17 9 22 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 80 v i d = 7 a v gs = 5 v 10 5 4 14 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 80 v i d = 7 a r g = 4.7 w v gs =5 v 8 9 19 10 12 25 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 2 8 a a v sd ( * ) forward on voltage i sd = 2 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a di/dt = 100 a/ m s v dd = 30 v t j = 150 o c 75 190 5 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area stn2ne10l 3/5
dim. mm mils min. typ. max. min. typ. max. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 l 6.3 6.5 6.7 248 255.9 263.8 c c b e l a b e1 l1 f g c d l2 e4 p008b sot-223 mechanical data stn2ne10l 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics ? 1998 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the neth erlands - singapore - spain - sweden - switzerland - t aiwan - thailand - united kingdom - u.s.a. http://www.st.com . stn2ne10l 5/5
|
