TIP3055 npn silicon power transistor
1 december 1970 - revised september 2002 specifications are subject to change without notice. designed for complementary use with the tip2955 series 90 w at 25c case temperature 15 a continuous collector current customer-specified selections available absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. this value applies when the base-emitter resistance r be = 100 ? . 2. derate linearly to 150c case temperature at the rate of 0.72 w/c. 3. derate linearly to 150c free air temperature at the rate of 28 mw/c. 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, i b(on) = 0.4 a, r be = 100 ? , v be(off) = 0, r s = 0.1 ? , v cc = 10 v. rating symbol value unit collector-base voltage (i e = 0) v cbo 100 v collector-emitter voltage (i b = 0) (see note 1) v cer 70 v emitter-base voltage v ebo 7v continuous collector current i c 15 a continuous base current i b 7a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 90 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 3.5 w unclamped inductive load energy (see note 4) ?li c 2 62.5 mj operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c lead temperature 3.2 mm from case for 10 seconds t l 260 c sot-93 package (top view) pin 2 is in electrical contact with the mounting base. mdtraaa b c e 1 2 3
TIP3055 npn silicon power transistor 2
december 1970 - revised september 2002 specifications are subject to change without notice. notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25c case temperature parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = 30 ma i b = 0 (see note 5) 60 v i cer collector-emitter cut-off current v ce = 70 v r be =100 ? 1ma i ceo collector cut-off current v ce = 30 v i b =0 0.7 ma i cev voltage between base and emitter v ce = 100 v v be = -1.5 v 5 ma i ebo emitter cut-off current v eb = 7 v i c =0 5 ma h fe forward current transfer ratio v ce = 4 v v ce = 4 v i c = 4a i c = 1 0a (see notes 5 and 6) 20 5 70 v ce(sat) collector-emitter saturation voltage i b = 0.4 a i b = 3.3 a i c = 4a i c = 1 0a (see notes 5 and 6) 1.1 3 v v be base-emitter voltage v ce = 4 v i c = 4 a (see notes 5 and 6) 1.8 v h fe small signal forward current transfer ratio v ce = 10 v i c = 0.5 a f = 1 khz 15 | h fe | small signal forward current transfer ratio v ce = 10 v i c = 0.5 a f = 1 mhz 3 thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1.39 c/w r ja junction to free air thermal resistance 35.7 c/w resistive-load-switching characteristics at 25c case temperature parameter test conditions ? min typ max unit t on tu r n - o n t i m e i c = 6 a v be(off) = -4 v i b(on) = 0.6 a r l = 5 ? i b(off) = -0.6 a t p = 20 s, dc 2% 0.6 s t off turn-off time 1s
TIP3055 npn silicon power transistor 3
december 1970 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. maximum safe operating regions figure 2. typical dc current gain vs collector current i c - collector current - a 001 01 10 10 h fe - dc current gain 10 100 1000 tcs637ad v ce = 4 v t c = 25c t p = 300 s, duty cycle < 2% maximum forward-bias safe operating area v ce - collector-emitter voltage - v 10 10 100 1000 i c - collector current - a 01 10 10 100 sas637ab t p = 300 s, d = 0.1 = 10% t p = 1 ms, d = 0.1 = 10% t p = 10 ms, d = 0.1 = 10% dc operation
TIP3055 npn silicon power transistor 4
december 1970 - revised september 2002 specifications are subject to change without notice. thermal information figure 3. maximum power dissipation vs case temperature t c - case temperature - c 0 25 50 75 100 125 150 p tot - maximum power dissipation - w 0 20 40 60 80 100 tis637ab
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