rev.1.00, aug.20.2004, page 1 of 6 bcr08as-12 triac low power use rej03g0292-0100 rev.1.00 aug.20.2004 features ? i t (rms) : 0.8 a ? v drm : 600 v ? i fgti , i rgti , i rgt : 5 ma ? i fgt : 10 ma ? non-insulated type ? planar passivation type outline 2, 4 1 3 1. t 1 terminal 2. t 2 terminal 3. gate terminal 4. t 2 terminal sot-89 2 1 3 4 applications hybrid ic, solid state relay, electric fan, washing m achine, and other general purpose control applications maximum ratings voltage class parameter symbol 12 (mark bf) unit repetitive peak off-state voltage note1 v drm 600 v non-repetitive peak off-state voltage note1 v dsm 720 v
bcr08as-12 rev.1.00, aug.20.2004, page 2 of 6 parameter symbol ratings unit conditions rms on-state current i t (rms) 0.8 a commercial frequency, sine full wave 360 conduction, ta = 40 c note3 surge on-state current i tsm 8 a 60hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t0.26a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 1w average gate power dissipation p g (av) 0.1 w peak gate voltage v gm 10 v peak gate current i gm 1a junction temperature tj ? 40 to +125 c storage temperature tstg ? 40 to +125 c mass ? 48 mg typical value notes: 1. gate open. electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak off-state current i drm ? ? 2.0 ma tj = 125 c, v drm applied on-state voltage v tm ? ? 2.0 v tc = 25 c, i tm = 1.2 a, instantaneous measurement v fgt ??2.0v ? v rgt ??2.0v ?? v rgt ?? ??2.0v gate trigger voltage note2 v v fgt ?? ??2.0v tj = 25 c, v d = 6 v, r l = 6 ? , r g = 330 ? i fgt ?? 5ma ? i rgt ?? 5ma ?? i rgt ?? ?? 5ma gate trigger current note2 v i fgt ?? ??10ma tj = 25 c, v d = 6 v, r l = 6 ? , r g = 330 ? gate non-trigger voltage v gd 0.1 ? ? v tj = 125 c, v d = 1/2 v drm thermal resistance r th (j-a) ??65 c/w junction to ambient note3 critical-rate of rise of off-state commutating voltage note4 (dv/dt)c 0.5 ? ? v/ s tj = 125 c notes: 2. measurement using the gate trigger characteristics measurement circuit. 3. soldering with ceramic plate (25 mm 25 mm t0.7 mm). 4. test conditions of the critical-rate of rise of off- state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125 c 2. rate of decay of on -state commutating current (di/dt)c = ? 0.4 a/ms 3. peak off-state voltage v d = 400 v supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c
bcr08as-12 rev.1.00, aug.20.2004, page 3 of 6 performance curves maximum on-state characteristics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 60hz) surge on-state current (a) gate characteristics gate current (ma) gate voltage (v) gate trigger voltage vs. junction temperature junction temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) gate trigger current vs. junction temperature junction temperature (c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) maximum transient thermal impedance characteristics (junction to ambient) conduction time (cycles at 60hz) transient thermal impedance (c/w) 10 ? 1 10 1 7 5 3 2 012 10 0 7 5 3 2 345 4 4 10 0 2510 1 4 2 37 10 2 4 25 37 4 6 8 10 0 10 0 23 10 0 5710 1 23 5710 2 23 5710 3 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? 1 v gt 10 1 10 3 7 5 3 2 ?60 ?20 20 10 2 7 5 3 2 60 100 140 4 4 ?40 0 40 80 120 i v rgt v rgt iii i v fgt v fgt iii 10 1 10 3 7 5 3 2 ?60 ?20 20 10 2 7 5 3 2 60 100 140 4 4 ?40 0 40 80 120 10 1 23 10 ?1 5710 0 23 5710 1 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 23 10 2 5710 3 23 5710 4 23 5710 5 junction to ambient * * 25mm 25mm t0.7mm ceramic plate tj = 25c tj = 125c typical example v gm = 10v i gm = 1a v gd = 0.2v i fgt i , i fgt iii i rgt i , i rgt iii p gm = 1w p g(av) = 0.1w i fgt i , i rgt iii , i rgt i i fgt iii typical example
bcr08as-12 rev.1.00, aug.20.2004, page 4 of 6 on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation rms on-state current (a) ambient temperature (c) allowable ambient temperature vs. rms on-state current junction temperature (c) repetitive peak off-state current (tj = tc) repetitive peak off-state current (tj = 25c) 100 (%) repetitive peak off-state current vs. junction temperature holding current vs. junction temperature junction temperature (c) holding current (tj = tc) holding current (tj = 25c) 100 (%) latching current (ma) latching current vs. junction temperature junction temperature (c) 2.0 1.6 1.2 0.8 0.4 0 2.0 0 0.4 0.8 1.2 1.6 160 120 100 60 20 0 1.6 00.2 0.6 1.0 1.4 40 80 140 0.4 0.8 1.2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 160 100 80 40 20 0 140 40 ?40 ?60 ?20 0 20 60 80 140 100120 60 120 140 40 ?40 ? 60 ?20 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 140 40 ?40 ?60 ?20 0 20 60 80 100 120 160 ? 40 0 40 80 120 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? 1 typical example typical example distribution breakover voltage vs. junction temperature junction temperature (c) breakover voltage (tj = tc) breakover voltage (tj = 25c) 100 (%) 360 conduction resistive, inductive loads curves apply regardless of conduction angle resistive, inductive loads natural convection typical example t 2 + , g ? typical example t 2 + , g + t 2 ? , g ? t 2 ? , g + typical example ? ? ? 25mm 25mm t0.7mm ceramic plate
bcr08as-12 rev.1.00, aug.20.2004, page 5 of 6 rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 100 (%) breakover voltage vs. rate of rise of off-state voltage commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) gate trigger current (tw) gate trigger current (dc) 100 (%) gate current pulse width ( s) gate trigger current vs. gate current pulse width test procedure i test procedure iii test procedure iv test procedure ii gate trigger characteristics test circuits 23 10 0 5710 1 23 5710 2 23 5710 3 120 0 20 40 60 80 100 140 160 10 ?1 23 5710 0 10 0 7 5 3 2 23 5710 1 10 1 7 5 3 2 10 ?1 10 1 10 3 7 5 3 2 10 0 2510 1 10 2 7 5 3 2 37 10 2 4 4 425 37 4 6 ? 6 ? 6 ? 6 ? 6v 6v 6v 6v 330 ? 330 ? 330 ? 330 ? a v a v a v a v typical example tj = 125c i quadrant iii quadrant minimum characteristics value i quadrant iii quadrant typical example tj = 125c i t = 1a = 500 s v d = 200v typical example i fgt i i fgt iii i rgt i i rgt iii
bcr08as-12 rev.1.00, aug.20.2004, page 6 of 6 package dimensions sot-89 eiaj package code jedec code mass (g) (reference value) lead material ? 0.048 cu alloy conforms symbol dimension in millimeters min typ max a a 1 a 2 b d e e x y 1 y zd ze 4.4 0.1 0.4 0.1 1.6 0.2 3.9 0.3 2.5 0.1 0.8 min 1.5 0.1 3.0 0.4 0.05 1.5 0.1 0.5 0.1 note 1) the dimensional figures indicate representative values unless otherwise the tolerance is specified. order code lead form standard packing quantity standard order code standard order code example surface-mounted type stick 25 type name +a bcr08as-12a surface-mounted type taping 3000 type name +a ?t +direction (1 or 2)+3 bcr08AS-12A-T13 note : please confirm the specificat ion about the shipping in detail.
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