symbol v ds v gs i dm t j , t stg symbol ty p max 38 50 69 80 r jl 24 30 maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w w t a =70c 1.6 junction and storage temperature range -55 to 150 c power dissipation t a =25c p d 2.5 a t a =70c 4 pulsed drain current b 20 continuous drain current a t a =25c i d 5 drain-source voltage 60 v gate-source voltage 20 v absolute maximum ratings t a =25c unless otherwise noted parameter maximum units ao4440 n-channel enhancement mode field effect transistor features v ds (v) = 60v i d = 5a (v gs = 10v) r ds(on) < 55m ? (v gs = 10v) r ds(on) < 75m ? (v gs = 4.5v) general description the ao4440 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. standard product ao4440 is pb-free (meets rohs & sony 259 specifications). aO4440L is a green product ordering option. ao4440 and a O4440L are electrically identical soic-8 g s s s d d d d g d s
ao4440 symbol min typ max units bv dss 60 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2.3 3 v i d(on) 20 a 42 55 t j =125c 75 54 75 m ? g fs 11 s v sd 0.78 1 v i s 4a c iss 450 540 pf c oss 60 pf c rss 25 pf r g 1.65 2 ? q g (10v) 8.5 10.5 nc q g (4.5v) 4.3 5.5 nc q gs 1.6 nc q gd 2.2 nc t d(on) 5.1 7 ns t r 2.6 4 ns t d(off) 15.9 20 ns t f 23ns t rr 25.1 35 ns q rr 28.7 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice v gs =0v, v ds =30v, f=1mhz v gs =0v, v ds =0v, f=1mhz switching parameters reverse transfer capacitance gate resistance output capacitance i s =1a,v gs =0v v gs =10v, i d =5a diode forward voltage v gs =10v, v ds =30v, r l =6 ? , r gen =3 ? gate source charge gate drain charge turn-on delaytime turn-on rise time total gate charge v gs =10v, v ds =30v, i d =5a r ds(on) static drain-source on-resistance forward transconductance m ? v gs =4.5v, i d =4a v ds =5v, i d =5a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =10v, v ds =5v a gate-body leakage current v ds =0v, v gs = 20v drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =48v, v gs =0v n channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters maximum body-diode continuous current dynamic parameters body diode reverse recovery charge total gate charge i f =5a, di/dt=100a/ s turn-off delaytime turn-off fall time body diode reverse recovery time i f =5a, di/dt=100a/ s input capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. alpha & omega semiconductor, ltd.
ao4440 typical electrical and thermal characteristics: n-channel 0 5 10 15 20 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5v 4.0v 10.0v 5.0v 4.5v 0 5 10 15 2 2.5 3 3.5 4 4.5 5 v gs (volts) figure 2: transfer characteristics i d (a) 20 30 40 50 60 70 80 90 100 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v i d =4a i d =5a 40 60 80 100 120 140 160 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =5a 25c 125c alpha & omega semiconductor, ltd.
ao4440 typical electrical and thermal characteristics: n-channel 0 2 4 6 8 10 0246810 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 0 102030405060 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1ms 0.1s 1s 10s d c t j(max) =150c t a =25c r ds(on) limited v ds =30v i d = 5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s alpha & omega semiconductor, ltd.
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