symbol v ds v gs i dm t j , t stg symbol ty p max 64 83 89 120 r jl 53 70 junction and storage temperature range a p d c 1.5 1 -55 to 150 t a =70c i d 7 5.7 30 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 8 gate-source voltage drain-source voltage 20 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja ao8806 common-drain dual n-channel enhancement mode field effect transistor features v ds (v) = 20v i d = 7 a (v gs = 4.5v) r ds(on) < 22m ? (v gs = 4.5v) r ds(on) < 27m ? (v gs = 2.5v) r ds(on) < 35m ? (v gs = 1.8v) general description the ao8806 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. it is esd protected. standard product a o8806 is pb-free (meets rohs & sony 259 specifications). g1 s1 s1 d1/d2 g2 s2 s2 d1/d2 1 2 3 4 8 7 6 5 tssop-8 top view g1 d1 s1 g2 d2 s2 alpha & omega semiconductor, ltd.
ao8806 symbol min typ max units bv dss 20 v 1 t j =55c 5 1 ? ? ? q g 16 nc q gs 0.8 nc q gd 3.8 nc t d(on) 6.2 ns t r 12.7 ns t d(off) 51.7 ns t f 16 ns t rr 17.7 ns q rr 6.7 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. v ds =0v, v gs =8v maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =10v, f=1mhz gate drain charge turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =1.35 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =10v, i d =7a gate source charge m ? v gs =2.5v, i d =5.5a i s =1a,v gs =0v v ds =5v, i d =7a v gs =1.8v, i d =5a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =16v, v gs =0v zero gate voltage drain current i gss gate-body leakage current v ds =0v, v gs =4.5v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =7a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =7a reverse transfer capacitance i f =7a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4 : july 2005 alpha & omega semiconductor, ltd.
ao8806 typical electrical and thermal characteristics 0 10 20 30 012345 v ds (volts) figure 1: on-regions characteristi cs i d (a) v gs =1v v gs =1.5v v gs =2v 8v 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v gs =5v 10 20 30 40 50 0 5 10 15 20 i d( a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =4.5v v gs =2.5v v gs =1.8v 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalize on-resistance v gs =4.5v v gs =2.5v v gs =1.8v i d =6.5a 10 20 30 40 50 60 02468 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c i d =6.5a 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c alpha & omega semiconductor, ltd.
ao8806 typical electrical and thermal characteristics 0 1 2 3 4 5 0 5 10 15 20 qg (nc) figure 7: gate-charge characteristics v gs (volt s) v ds =10v i d =7a 0 400 800 1200 1600 2000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf ) c iss c rss c oss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) t j(max) =150c t a =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance t on t p d d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =83c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 alpha & omega semiconductor, ltd.
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