symbol 10 sec steady state v ds v gs 0.5 0.5 0.5 0.45 i dm 0.38 0.28 0.24 0.18 t j , t stg symbol typ max t 10s 275 330 steady-state 360 450 steady-state r jl 300 350 maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a r ja c/w maximum junction-to-ambient a c/w parameter continuous drain current a, f units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v a c t a =70c i d pulsed drain current b power dissipation a t a =25c junction and storage temperature range w drain-source voltage 20 8 -55 to 150 3 gate-source voltage p d AO5804E dual n-channel enhancement mode field effect transistor features v ds (v) = 20v i d = 0.5 a (v gs = 4.5v) r ds(on) < 0.55 ? (v gs = 4.5v) r ds(on) < 0.68 ? (v gs = 2.5v) r ds(on) < 0.80 ? (v gs = 1.8v) esd protected! general description the AO5804E/l uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. AO5804E and AO5804El are electrically identical. -rohs compliant -AO5804El is halogen free sc-89-6 g1 d1 s1 g2 d2 s2 g1 d2 s1 g2 s2 d1 alpha & omega semiconductor, ltd. www.aosmd.com
AO5804E symbol min typ max units bv dss 20 v 1 t j =55c 5 1 a 100 a v gs(th) 0.45 0.6 1 v i d(on) 3 a 0.4 0.55 t j =125c 0.6 0.85 0.48 0.68 0.6 0.8 g fs 1.5 s v sd 0.65 1 v i s 0.4 a c iss 35 45 pf c oss 8 pf c rss 6 pf q g 0.63 1 nc q gs 0.08 nc q gd 0.16 nc t d(on) 4.5 ns t r 3.3 ns t d(off) 78 ns t f 32 ns t rr 8 10 ns q rr 2 nc 0.5 0.450.28 0.18 this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =0.5a, di/dt=100a/ s body diode reverse recovery charge i f =0.5a, di/dt=100a/ s switching parameters v gs =4.5v, v ds =10v, i d =0.5a v gs =5v, v ds =10v, r l =50 , r gen =3 turn-on rise timeturn-off delaytime turn-off fall time gate drain chargeturn-on delaytime diode forward voltage i s =0.1a,v gs =0v total gate chargegate source charge maximum body-diode continuous current dynamic parameters v gs =0v, v ds =10v, f=1mhz reverse transfer capacitance input capacitanceoutput capacitance v ds =5v, i d =0.5a v gs =1.8v, i d =0.3a v gs =4.5v, i d =0.5a forward transconductance on state drain current r ds(on) static drain-source on-resistance i dss ? v ds =0v, v gs =8v v ds =20v, v gs =0v v ds =0v, v gs =4.5v zero gate voltage drain current i gss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 a, v gs =0v v gs =2.5v, i d =0.5a v gs =4.5v, v ds =5v gate threshold voltage v ds =v gs i d =250 a gate-body leakage current a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating.f. the maximum current rating is limited by bond-wires rev3: aug 2008 alpha & omega semiconductor, ltd. www.aosmd.com
AO5804E typical electrical and thermal characteristics 0.5 0.450.28 0.18 0 1 2 3 0 1 2 3 4 v ds (volts) figure 1: on-region characteristics i d (a) 1v 2v 4.5v vgs=1.5v 0 0.5 1 1.5 2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs (volts) figure 2: transfer characteristics i d (a) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v id=0.5a v gs =1.8v id=-0.3a 0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) ( ? ) 25c 125c v ds =5v v gs =1.8v v gs =4.5v i d =0.5a 25c 125c 3.5v v gs =2.5v v gs =2.5v id=0.5a 2.5v alpha & omega semiconductor, ltd. www.aosmd.com
AO5804E typical electrical and thermal characteristics 0.5 0.450.28 0.18 0 1 2 3 4 5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 20 40 60 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) ciss 0 2 4 6 8 10 12 14 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ? ja normalized transient thermal resistance c oss c rss v ds =10v i d =0.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =450c/w in descending orderd=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c t on t p d t on p d 0.0 0.1 1.0 10.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 s 10ms 1ms 1s dc r ds(on) limited t j(max) =150c t a =25c 100 s 10s 0.1s alpha & omega semiconductor, ltd. www.aosmd.com
AO5804E - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off alpha & omega semiconductor, ltd. www.aosmd.com
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