AO4286 100v n-channel mosfet general description product summary v ds i d (at v gs =10v) 4a r ds(on) (at v gs =10v) < 68m w r ds(on) (at v gs =4.5v) < 92m w 100% uis tested symbol v the AO4286 uses trench mosfet technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance. both conduction an d switching power losses are minimized due to an extremely low combination of r ds(on) , ciss and coss. this device is ideal for boost converters and synch ronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 100v drain-source voltage 100 g d s soic-8 top view bottom view d d d d s s s g v ds v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 20 85 30 power dissipation b p d w t a =70c 1.6 t a =25c 2.5 a i d 43 t c =25c t c =70c 25 pulsed drain current c continuous drain current mj avalanche current c 0.8 a 4 avalanche energy l=0.1mh c v units junction and storage temperature range -55 to 150 c thermal characteristics parameter typ max v 20 gate-source voltage drain-source voltage 100 maximum junction-to-ambient a c/w r q ja 42 70 50 rev 0: nov. 2012 www.aosmd.com page 1 of 5
AO4286 symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.7 2.25 2.9 v i d(on) 25 a 55.5 68 t j =125c 104 127 72.5 92 m w g fs 13 s v sd 0.76 1 v i s 3 a c iss 390 pf c oss 30 pf c rss 3 pf r g 7 w q g (10v) 5.8 10 nc q g (4.5v) 2.8 5 nc q gs 1.1 nc q gd 1.2 nc t d(on) 6 ns t 2.5 ns gate resistance v gs =0v, v ds =0v, f=1mhz on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =4a gate-body leakage current reverse transfer capacitance v gs =0v, v ds =50v, f=1mhz v ds =v gs i d =250 m a v ds =0v, v gs =20v maximum body-diode continuous current input capacitance output capacitance forward transconductance i s =1a,v gs =0v v ds =5v, i d =4a dynamic parameters v gs =4.5v, i d =3a r ds(on) static drain-source on-resistance diode forward voltage m w electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current drain-source breakdown voltage switching parameters turn-on delaytime v gs =10v, v ds =50v, i d =4a turn-on rise time v =10v, v =50v, r =12.5 w , total gate charge gate source charge gate drain charge total gate charge t r 2.5 ns t d(off) 18 ns t f 2.5 ns t rr 15 ns q rr 53 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =4a, di/dt=500a/ m s body diode reverse recovery charge body diode reverse recovery time i f =4a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =50v, r l =12.5 w , r gen =3 w turn-off fall time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 0: nov. 2012 www.aosmd.com page 2 of 5
AO4286 typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 40 50 60 70 80 90 0 2 4 6 8 10 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =3a v gs =10v i d =4a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 25 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 3.5v 10v 4.5v 6v 4v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 40 60 80 100 120 140 160 180 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =4a 25 c 125 c rev 0: nov. 2012 www.aosmd.com page 3 of 5
AO4286 typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 2 4 6 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 350 400 450 500 0 20 40 60 80 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to- c oss c rss v ds =50v i d =4a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10ms 1ms dc r ds(on) t j(max) =150 c t a =25 c 100 m s 40 ambient (note f) 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q ja =85 c/w rev 0: nov. 2012 www.aosmd.com page 4 of 5
AO4286 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 0: nov. 2012 www.aosmd.com page 5 of 5
|
