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| inchange semiconductor isc product specification isc silicon pnp power transistor 2SB713 description collector-emitter breakdown voltage- : v (br)ceo = -140v(min) good linearity of h fe high power dissipation complement to type 2sd751 applications designed for high power audio frequency amplifier use. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -200 v v ceo collector-emitter voltage -140 v v ebo emitter-base voltage -5 v i c collector current-continuous -9 a i cp collector current-pulse -15 a p c collector power dissipation @ t c =25 100 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB713 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = -5.0a; i b = -0.7a b -2.0 v v be (on) base -emitter on voltage i c = -7a; v ce = -5v -1.8 v i cbo collector cutoff current v cb = -140v; i e =0 -50 a i ebo emitter cutoff current v eb = -3v; i c =0 -50 a h fe-1 dc current gain i c = -20ma; v ce = -5v 20 h fe-2 dc current gain i c = -1a; v ce = -5v 40 200 h fe-3 dc current gain i c = -5a; v ce = -5v 15 f t current-gain?bandwidth product i c = -0.5a; v ce = -5v 20 mhz ? h fe- 2 classifications r q p 40-80 60-120 100-200 isc website www.iscsemi.cn 2 |
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