1 these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. v ds (v) r ds(on) m( ? )i d (a) 40 @ v gs = 4.5v 6.0 31 @ v gs = 10v 6.9 80 @ v gs = -4.5v -4.2 52 @ v gs = -10v -5.2 30 product summary -30 p & n-channel 30-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? miniature so-8 surface mount package saves board space ? high power and current handling capability ? low side high current dc-dc converter applications notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature 1 2 3 4 7 8 5 6 symbol n-channe l p-channe l units v ds 30 -30 v gs 20 20 t a =25 o c 6.9 -5.2 t a =70 o c5.4-6.8 i dm 20 -20 i s 1.3 -1.3 a t a =25 o c 2.1 2.1 t a =70 o c1.31.3 t j , t stg o c power dissipation a p d operating junction and storage temperature range w -55 to 150 continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a symbol maximum units maximum junction-to-case a t <= 5 sec r jc 40 o c/w maximum junction-to-ambient a t <= 5 sec r ja 60 o c/w thermal resistance ratings parameter freescale AO4610/ mc4610 www.freescale.net.cn AO4610/ mc4610 AO4610/ mc4610 AO4610/ mc4610
2 notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. ch m in typ max v gs = v ds , i d = 250 u a n1 v gs = v ds , i d = -250 ua p-1.0 v gs = -20 v, v ds = 0 v p100 v gs = 20 v, v ds = 0 v n100 v ds = -24 v, v gs = 0 v p-1 v ds = 24 v, v gs = 0 v n1 v ds = 5 v, v gs = 10 v n20 v ds = -5 v, v gs = -10 v p-20 vgs = 10 v, i d = 6.9 a 31 vgs = 4.5 v, i d = 6 a 40 vgs = -10 v, i d = -5.2 a 52 vgs = -4.5 v , i d = -4.2 a 80 v ds = 15 v, i d = 6.9 a n 25 v ds = -15 v, i d = -5.2 a p10 n4.0 p10 n1.1 p2.2 n1.4 p1.7 n 8 p 10 n 5 p 2 . 8 n23 p53.6 n3 p46 gate-source charge q gs gate-drain charge q gd dynamic turn-on delay time rise time ns n-chaneel v dd =15v, v gs =10v, i d =1a , r gen =6 ? , p-channel v dd =-15v, v gs =-10v, i d =-1a r gen =6 ? fall-time t f turn-off delay time t d(on) t r t d(off) m ? drain-source on-resistance a r ds(on) n p on-state drain current a i d(on) a unit gate-body leakage i gss ua i dss zero gate voltage drain current specifications (t a = 25 o c unless otherwise noted) na static test conditions v symbol parameter gate-threshold voltage v gs(th) limits forward tranconductance a g fs s total gate charge q g n-channel v ds =15v, v gs =10v, i d =6.9a p-channel v ds =-15v, v gs =-10v, i d =-5.2a nc freescale www.freescale.net.cn AO4610/ mc4610 AO4610/ mc4610 AO4610/ mc4610 AO4610/ mc4610 freescale reserves the right to make changes without fu rther notice to any products herein. freescale makes no warranty, representation or guarantee regarding the suitability of its produ cts for any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically dis itation special, consequential or incidental damages. ?typical? parameters which may be provide d in freescale data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operati ng parameters, including ?typicals? must be validat ed for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed, intended, or authorized for use as components in sy stems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur. should buyer purchase or use freescale products for any s uch unintended or unauthorized application, buyer s hall indemnify and hold freescale and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with suc h unintended or unauthorized use, even if such claim alleges that freescale was negligent regarding the design or manufacture of the part. freescale is an equal opportunity/affirmative action employer. claims any and all liability, including without lim
3 0 5 10 15 20 25 30 00.511.522.5 vds, drain-source voltage (v) id, drain current (a) 5.0v vgs = 10v 6.0v 3.0v 4.0v 0 5 10 15 20 25 30 0.5 1.5 2.5 3.5 4.5 vgs, gate to source voltage (v) id, drain current (a) ta = -55 o c 25 o c 125 o c vds = 5v 0.5 1 1.5 2 2.5 0 5 10 15 20 25 30 id, drain current (a) rds(on), normalized drain-source on-resistanc e 4.5v 6.0v 10v 0 300 600 900 1200 1500 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v typical electrical characteristics (n-channel) 0 2 4 6 8 10 03691215 qg, gate charge (nc) vgs, gate-source voltage (v) id = 7a 15v 0.6 0.8 1. 0 1. 2 1. 4 1. 6 -50-25 0 2550 75100125150 t j C juncation temp erature ( ) normalized r ds (on) v gs = 10v i d = 7a figure 1. on-region characteristics figure 2. body diode forward voltage variation with source current and temperature figure 6. on-resistance variation with temperature figure 5. gate charge characteristics figure 4. capacitance characteristics figure 3. on resistance vs vgs voltage freescale AO4610/ mc4610 www.freescale.net.cn AO4610/ mc4610 AO4610/ mc4610 AO4610/ mc4610
4 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 vsd, body diode forward voltage (v) is, reverse drain current (a ) ta = 125 o c 25 o c vgs = 0v 0 0.02 0.04 0.06 0.08 0.1 246810 vgs, gate to source voltage (v) rds(on), on-resistance (ohm ) id = 7 a ta = 25 o c 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 ta, ambient temperature (oc) -vth, gate-source thresthol d voltage (v) vds = vgs id = -250ma 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, time (sec) p(pk), peak transient power (w) single pulse rqja = 125oc/w ta = 25oc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, tim e (s e c ) single p ulse 0.01 0.02 0.0 0.1 0.2 d = 0.5 rqj a (t) = r(t) + rqja rqja = 125 o c/w t j - t a = p * r q j a(t) duty cycle, d = t1 / t2 p(pk) t1 t2 typical electrical characteristics (n-channel) figure 11. transient thermal response curve figure 10. single pulse maximum power dissipation figure 9. vth gate to source voltage vs temperature figure 7. transfer characteristics figure 8. on-resistance with ga te to source voltage normalized thermal transien t junction to ambient freescale AO4610/ mc4610 www.freescale.net.cn AO4610/ mc4610 AO4610/ mc4610 AO4610/ mc4610
5 0 10 20 30 0123456 -vds, drain to source voltage (v) -id, drain current (a) vgs = -10v -3.0v -4.0v -5.0v -6.0v 0 3 6 9 12 15 11.522.533.544.5 -vgs, gate to source voltage (v) -id, drain current (a) ta = -55 o c 25 o c 125 o c vds = -5v 0.8 1 1.2 1.4 1.6 1.8 2 0 6 12 18 24 30 -id, drain current (a) rds(on), normalized drain-source on-resistanc e -4.5v -6.0v -10v 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 -vds, drain to source voltage (v) capacitance (pf) ciss coss crss f = 1 mhz vgs = 0 v 0 2 4 6 8 10 0246810 qg, gate charge (nc) -vgs, gate-source voltage (v ) id = -5.7a -15v 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 tj juncation temperature (c) normalized rds(on) vgs = 10v id = 5.7a typical electrical characteristics (p-channel) figure 1. on-region characteristics figure 2. body diode forward voltage variation with source current and temperature figure 3. on resistance vs vgs voltage figure 4. capacitance characteristics figure 5. gate charge characteristics figure 6. on-resistance variation with temperature freescale AO4610/ mc4610 www.freescale.net.cn AO4610/ mc4610 AO4610/ mc4610 AO4610/ mc4610
6 0.0001 0.001 0.01 0.1 1 10 100 00.20.40.60.811.21.4 -vsd, body diode forward voltage (v) -is, reverse drain current (a ) vgs =0v ta = 125 o c 25 o c 0 0.05 0.1 0.15 0.2 0.25 246810 -vgs, gate to source voltage (v) rds(on), on-resistance (ohm) id = -5.7a ta = 25 o c 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 ta, ambient temperature ( o c) -vth, gate-source thresthold voltage (v) vds = vgs id = -250ma 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t1, time (sec) p(pk), peak transient power (w ) single pulse rqja = 125c/w ta = 25c 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , tim e (s ec) rqja(t) = r(t) + rqja rqja = 125 o c/w tj - ta = p * rq ja(t) duty cycle, d = t1 / t2 p (p k ) t1 t2 single puls e 0.01 0.02 0.05 0.1 0.2 d = 0.5 typical electrical characteristics (p-channel) figure 7. transfer characteristics figure 8. on-resistance with ga te to source voltage figure 9. vth gate to source voltage vs temperature figure 10. single pu lse maximum power dissipation normalized thermal transien t junction to ambient figure 11. transient thermal response curve freescale AO4610/ mc4610 www.freescale.net.cn AO4610/ mc4610 AO4610/ mc4610 AO4610/ mc4610
7 package information so-8: 8lead h x 45 freescale AO4610/ mc4610 www.freescale.net.cn AO4610/ mc4610 AO4610/ mc4610 AO4610/ mc4610
8 ordering information ? am4512c-t1-xx ?a: analog power ? m: mosfet ? 4512: part number ? c: complementary ? t1: tape & reel ? xx: blank: standard pf: leadfree freescale AO4610/ mc4610 www.freescale.net.cn AO4610/ mc4610 AO4610/ mc4610 AO4610/ mc4610
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