? semiconductor components industries, llc, 2005 august, 2005 ? rev. 5 1 publication order number: ntb35n15/d ntb35n15 power mosfet 37 amps, 150 volts n?channel enhancement?mode d 2 pak features ? source?to?drain diode recovery time comparable to a discrete fast recovery diode ? avalanche energy specified ? i dss and r ds(on) specified at elevated temperature ? mounting information provided for the d 2 pak package ? pb?free packages are available typical applications ? pwm motor controls ? power supplies ? converters maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss 150 vdc drain?to?source voltage (r gs = 1.0 m ) v dgr 150 vdc gate?to?source voltage ? continuous ? non?repetitive (t p 10 ms) v gs v gsm 20 40 vdc drain current ? continuous @ t a = 25 c ? continuous @ t a = 100 c ? pulsed (note 2) i d i d i dm 37 23 111 adc total power dissipation @ t a = 25 c derate above 25 c total power dissipation @ t a = 25 c (note 1) p d 178 1.43 2.0 w w/ c w operating and storage temperature range t j , t stg ?55 to +150 c single pulse drain?to?source avalanche energy ? starting t j = 25 c (v dd = 100 vdc, v gs = 10 vdc, i l(pk) = 21.6 a, l = 3.0 mh, r g = 25 ) e as 700 mj thermal resistance ? junction?to?case ? junction?to?ambient ? junction?to?ambient (note 1) r jc r ja r ja 0.7 62.5 50 c/w maximum lead temperature for soldering purposes, 1/8 in from case for 10 seconds t l 260 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. when surface mounted to an fr4 board using the minimum recommended pad size, (cu. area 0.412 in 2 ). 2. pulse test: pulse width = 10 s, duty cycle = 2%. 37 amperes, 150 volts 50 m @ v gs = 10 v n?channel d s g http://onsemi.com 1 2 3 4 d 2 pak case 418b style 2 marking diagram & pin assignment 35n15 = device code a = assembly location y = year ww = work week g = pb?free package device package shipping ? ordering information ntb35n15 d 2 pak 50 units/rail NTB35N15T4 d 2 pak 800 tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. ntb35n15g d 2 pak (pb?free) 50 units/rail NTB35N15T4g d 2 pak (pb?free) 800 tape & ree l 35n15g ayww 1 gate 3 source 4 drain 2 drain
ntb35n15 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (v gs = 0 vdc, i d = 250 adc) temperature coefficient (positive) v (br)dss 150 ? ? 240 ? ? vdc mv/ c zero gate voltage drain current (v gs = 0 vdc, v ds = 150 vdc, t j = 25 c) (v gs = 0 vdc, v ds = 150 vdc, t j = 125 c) i dss ? ? ? ? 5.0 50 adc gate?body leakage current (v gs = 20 vdc, v ds = 0) i gss ? ? 100 nadc on characteristics gate threshold voltage v ds = v gs, i d = 250 adc) temperature coefficient (negative) v gs(th) 2.0 ? 2.9 ?8.56 4.0 ? vdc mv/ c static drain?to?source on?state resistance (v gs = 10 vdc, i d = 18.5 adc) (v gs = 10 vdc, i d = 18.5 adc, t j = 125 c) r ds(on) ? ? 0.042 ? 0.050 0.120 drain?to?source on?voltage (v gs = 10 vdc, i d = 18.5 adc) v ds(on) ? 1.55 1.78 vdc forward transconductance (v ds = 10 vdc, i d = 18.5 adc) g fs ? 26 ? mhos dynamic characteristics input capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz) c iss ? 2275 3200 pf output capacitance c oss ? 450 650 reverse transfer capacitance c rss ? 90 175 switching characteristics (notes 3 & 4) turn?on delay time (v dd = 120 vdc, i d = 37 adc, v gs = 10 vdc, r g = 9.1 ) t d(on) ? 20 35 ns rise time t r ? 125 225 turn?off delay time t d(off) ? 90 175 fall time t f ? 120 210 total gate charge (v ds = 120 vdc, i d = 37 adc, v gs = 10 vdc) q tot ? 70 100 nc gate?to?source charge q gs ? 14 ? gate?to?drain charge q gd ? 32 ? body?drain diode ratings (note 3) diode forward on?voltage (i s = 37 adc, v gs = 0 vdc) (i s = 37 adc, v gs = 0 vdc, t j = 125 c) v sd ? ? 1.00 0.88 1.5 ? vdc reverse recovery time (i s = 37 adc, v gs = 0 vdc, di s /dt = 100 a/ s) t rr ? 170 ? ns t a ? 112 ? t b ? 58 ? reverse recovery stored charge q rr ? 1.14 ? c 3. pulse test: pulse width = 300 s max, duty cycle = 2%. 4. switching characteristics are independent of operating junction temperature.
ntb35n15 http://onsemi.com 3 figure 1. on?region characteristics v ds , drain?to?source voltage (volts) 70 60 50 40 30 20 10 10 7 6 5 4 3 2 1 0 figure 2. transfer characteristics v gs , gate?to?source voltage (volts) 7 6 5 4 3 2 70 60 50 40 30 20 10 0 0 figure 3. on?resistance versus drain current and temperature i d , drain current (amps) 0.1 0.08 0.06 0.02 50 40 30 20 10 0 figure 4. on?resistance versus drain current and gate voltage i d , drain current (amps) 40 30 20 10 0 0.05 0.045 0.04 0.035 0.03 0 0.055 figure 5. on?resistance variation with temperature t j , junction temperature ( c) 2.5 2.25 2.0 1.75 1.5 1.25 1.0 0.75 0.5 150 125 100 75 50 25 0 ?25 ?50 v ds , drain?to?source voltage (volts) 50 40 30 1000 100 10 0.25 0 10,000 figure 6. drain?to?source leakage current versus voltage i d , drain current (amps) i d , drain current (amps) r ds(on) , drain?to?source resistance ( ) 70 60 0.04 r ds(on) , drain?to?source resistance ( ) 7 0 50 r ds(on), drain?to?source resistance (normalized) i dss , leakage (na) 70 60 15 0 80 89 60 100 90 110 120 130 140 v gs = 10 v v gs = 4.5 v v gs = 5 v v gs = 5.5 v v gs = 7 v v gs = 6 v v gs = 9 v t j = 25 c v gs = 8 v v gs = 4 v t j = 25 c t j = ?55 c t j = 100 c v ds 10 v t j = 25 c t j = ?55 c t j = 100 c v gs = 10 v t j = 25 c v gs = 10 v v gs = 15 v i d = 18.5 a v gs = 10 v t j = 150 c v gs = 0 v t j = 100 c
ntb35n15 http://onsemi.com 4 power mosfet switching switching behavior is most easily modeled and predicted by recognizing that the power mosfet is charge controlled. the lengths of various switching intervals ( t) are determined by how fast the fet input capacitance can be charged by current from the generator. the published capacitance data is difficult to use for calculating rise and fall because drain?gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) ) can be made from a rudimentary analysis of the drive circuit so that t = q/i g(av) during the rise and fall time interval when switching a resistive load, v gs remains virtually constant at a level known as the plateau voltage, v sgp . therefore, rise and fall times may be approximated by the following: t r = q 2 x r g /(v gg ? v gsp ) t f = q 2 x r g /v gsp where v gg = the gate drive voltage, which varies from zero to v gg r g = the gate drive resistance and q 2 and v gsp are read from the gate charge curve. during the turn?on and turn?off delay times, gate current is not constant. the simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an rc network. the equations are: t d(on) = r g c iss in [v gg /(v gg ? v gsp )] t d(off) = r g c iss in (v gg /v gsp ) the capacitance (c iss ) is read from the capacitance curve at a voltage corresponding to the off?state condition when calculating t d(on) and is read at a voltage corresponding to the on?state when calculating t d(off) . at high switching speeds, parasitic circuit elements complicate the analysis. the inductance of the mosfet source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. the voltage is determined by ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. the mosfet output capacitance also complicates the mathematics. and finally, mosfets have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. the resistive switching time variation versus gate resistance (figure 9) shows how typical switching performance is af fected by the parasitic circuit elements. if the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. the circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. power mosfets may be safely operated into an inductive load; however, snubbing reduces switching losses. 10 0 10 15 20 25 gate?to?source or drain?to?source voltage (volts) c, capacitance (pf) figure 7. capacitance variation 6000 3000 1000 0 v gs v ds 5000 2000 55 4000 v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss c iss
ntb35n15 http://onsemi.com 5 40 0 1 0.2 drain?to?source diode characteristics v sd , source?to?drain voltage (volts) figure 8. gate?to?source and drain?to?source voltage versus total charge i s , source current (amps) figure 9. resistive switching time variation versus gate resistance r g , gate resistance (ohms) 1 10 100 1000 10 t, time (ns) v dd = 75 v i d = 37 a v gs = 10 v v gs = 0 v t j = 25 c figure 10. diode forward voltage versus current 120 v gs , gate?to?source voltage (volts) 100 80 60 40 20 0 10 6 2 0 q g , total gate charge (nc) v ds, drain?to?source voltage (volts) 12 8 4 20 70 40 0 100 10 50 30 60 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 20 30 5 15 25 35 i d = 37 a t j = 25 c v gs q 2 q 1 q t v ds t r t d(off) t d(on) t f safe operating area the forward biased safe operating area curves define the maximum simultaneous drain?to?source voltage and drain current that a transistor can handle safely when it is forward biased. curves are based upon maximum peak junction temperature and a case temperature (t c ) of 25 c. peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in an569, ?transient thermal resistance ? general data and its use.? switching between the off?state and the on?state may traverse any load line provided neither rated peak current (i dm ) nor rated voltage (v dss ) is exceeded and the transition time (t r ,t f ) do not exceed 10 s. in addition the total power averaged over a complete switching cycle must not exceed (t j(max) ? t c )/(r jc ). a power mosfet designated e?fet can be safely used in switching circuits with unclamped inductive loads. for reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. although industry practice is to rate in terms of ener gy, avalanche energy capability is not a constant. the energy rating decrease s non?linearly with an increase of peak current in avalanche and peak junction temperature. although many e?fets can withstand the stress of drain?to?source avalanche at currents up to rated pulsed current (i dm ), the energy rating is specified at rated continuous current (i d ), in accordance with industry custom. the energy rating must be derated for temperature as shown in the accompanying graph (figure 12). maximum energy at currents below rated continuous i d can safely be assumed to equal the values indicated.
ntb35n15 http://onsemi.com 6 safe operating area figure 11. maximum rated forward biased safe operating area r(t), effective transient thermal resistance (normalized) t, time ( s) 0.1 1.0 0.01 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse r jc (t) = r(t) r jc d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 1.0 10 0.1 0.01 0.001 0.0001 0.00001 t j , starting junction temperature ( c) e as , single pulse drain?to?source figure 12. maximum avalanche energy versus starting junction temperature 0.1 1.0 100 v ds , drain?to?source voltage (volts) figure 13. thermal response 1 1000 avalanche energy (mj) i d , drain current (amps) r ds(on) limit thermal limit package limit 0.1 0 25 50 75 100 125 200 i d = 21.6 a 10 10 150 figure 14. diode reverse recovery waveform di/dt t rr t a t p i s 0.25 i s time i s t b 100 500 400 300 700 1000 100 v gs = 20 v single pulse t c = 25 c 600 1 ms 100 s 10 ms dc 10 s
ntb35n15 http://onsemi.com 7 package dimensions d 2 pak case 418b?04 issue j style 2: pin 1. gate 2. drain 3. source 4. drain seating plane s g d ?t? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ?b? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b?01 thru 418b?03 obsolete, new standard 418b?04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w?w view w?w view w?w 123 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 0.33 1.016 0.04 17.02 0.67 10.66 0.42 3.05 0.12 5.08 0.20 mm inches scale 3:1
ntb35n15 http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 ntb35n15/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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