 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| inchange semiconductor isc product specification isc silicon pnp darlington power transistor BDX64/a/b/c description collector current -i c = - 12a high dc current gain-h fe = 1000(min)@ i c = -5a complement to type bdx65/a/b/c applications designed for audio output stages and general amplifier and switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit BDX64 -80 BDX64a -100 BDX64b -120 v cbo collector-base voltage BDX64c -140 v BDX64 -60 BDX64a -80 BDX64b -100 v ceo collector-emitter voltage BDX64c -120 v v ebo emitter-base voltage -5 v i c collector current-continuous -12 a i cm collector current-peak -16 a i b b base current-continuous -0.2 a p c collector power dissipation @ t c =25 117 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor BDX64/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BDX64 -60 BDX64a -80 BDX64b -100 v ceo(sus) collector-emitter sustaining voltage BDX64c i c = -100ma ;i b =0 -120 v v ce(sat) collector-emitter saturation voltage i c = -5a; i b = -20ma b -2 v v be( on ) base-emitter on voltage i c = -5a ; v ce = -3v -2.5 v v ecf c-e diode forward voltage i f = -5a -1.8 v i ceo collector cutoff current v ce = 1 / 2 v ceomax ; i b = 0 -0.2 ma i cbo collector cutoff current v cb = v cbomax ;i e = 0 -0.4 ma BDX64 v cb = -40v;i e = 0;t j = 200 BDX64a v cb = -50v;i e = 0;t j = 200 BDX64b v cb = -60v;i e = 0;t j = 200 i cbo collector cutoff current BDX64c v cb = -70v;i e = 0;t j = 200 -3 ma i ebo emitter cutoff current v eb = -5v; i c =0 -5 ma h fe-1 dc current gain i c = -1a ; v ce = -3v 1500 h fe-2 dc current gain i c = -5a ; v ce = -3v 1000 h fe-3 dc current gain i c = -12a ; v ce = -3v 750 c ob output capacitance i e = 0 ; v cb = -10v; f test = 1mhz 200 pf switching times t on turn-on time 1 s t off turn-off time i c = -5a; i b1 = -i b2 = -20ma 2.5 s isc website www.iscsemi.cn 2 |
Price & Availability of BDX64
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |