july 2009 doc id 15986 rev 1 1/7 7 1N5806U aerospace 2.5 a fast recovery rectifier features aerospace applications surface mount hermetic package high thermal conduct ivity materials very small conduction losses negligible switching losses extremely fast switching low forward voltage drop package weight: 0.12 g target radiation qualification ? 150 krad (si) low dose rate ? 3 mrad (si) high dose rate under escc qualification description this power ultrafast recovery rectifier is designed and packaged to comply with the escc5000 specification for aerospace products. it is housed in a surface mount hermetically sealed lcc2a package whose footprint is 100% compatible with industry standard solutions in d5a. the 1N5806U is suitable for switching mode power supplies and high frequency dc to dc converters such as low voltage high frequency inverter, free wheeling or polarity protection. a k k a lcc2a table 1. device summary (1) 1. contact st sales office for information about the specif ic conditions for products in die form and qml-q versions. order code escc detailed specification quality level l ead finish eppl i f(av) v rrm t j(max) v f (max) 1N5806Ua1 - engineering model gold plated - 2.5 a 150 v 175 c 1.0 v 1N5806U01a 5101/014/13 flight part gold plated y 1N5806U02a 5101/014/14 flight part solder dip y www.st.com
characteristics 1N5806U 2/7 doc id 15986 rev 1 1 characteristics to evaluate the conduction losses use the following equation: p = 0.70 x i f(av) + 0.10 x i f 2 (rms ) table 2. absolute ratings (limiting values) symbol parameter value unit v rrm repetitive peak reverse voltage 150 v i f(rms) forward rms current 6 a i f(av) average forward rectified current t c = 135 c , = 0.5 2.5 a i fsm forward surge current t p = 8.3 ms sinusoidal 35 a t p = 10 ms sinusoidal 33 t stg storage temperature range -65 to + 175 c t j maximum operating junction temperature 175 c t sol maximum soldering temperature (1) 245 c 1. maximum duration 5 s. the same package must not be re-soldered until 3 minutes have elapsed. table 3. thermal resistance symbol parameter value unit r th (j-c) junction to case 13 c/w table 4. static electrical characteristics symbol parameter tests cond itions min. typ. max. unit i r (1) reverse current t j = 25 c v r = 150 v --0.5 a t j = 125 c - - 20 t j = 25 c v r = 160 v --10 t j = -65 c - - 10 v f (2) forward voltage t j = 25 c i f = 1 a --880 mv t j = 125 c - - 800 t j = -65 c - - 1075 t j = 25 c i f = 2.5 a - - 1000 1. pulse test: tp = 5 ms, < 2% 2. pulse test: tp = 680 s, < 2%
1N5806U characteristics doc id 15986 rev 1 3/7 table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = i r = 0.5 a, i rr = 0.05 a, di/dt = -65 a/s (min.) --25 ns i f = 1 a, v r = 30 v, di/dt = -50 a/s, - - 30 v fp forward recovery voltage i fm = 250 ma - - 2.2 v t fr forward recovery time i fm = 250 ma, v rf = 1.1 x v f --15ns c j diode capacitance v r = 10 v, f = 1 mhz - - 25 pf figure 1. forward voltage drop versus forward current (typical values) figure 2. forward voltage drop versus forward current (maximum values) i fm (a) 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t j =-65 c t j =125 c t j =125 c t j =25 c t j =25 c v fm (v) i fm (a) 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t j =-65 c t j =125 c t j =125 c t j =25 c t j =25 c v fm (v) figure 3. reverse leakage current versus reverse voltage applied (typical values) figure 4. relative variation of thermal impedance, junction to case, versus pulse duration i r (a) 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 0 20 40 60 80 100 120 140 160 t j =125 c t j =25 c t j =75 c v r (v) z th(j-c) / r th(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 single pulse lcc2a t p (s)
characteristics 1N5806U 4/7 doc id 15986 rev 1 figure 5. reverse recovery time versus di f /dt figure 6. junction capacitance versus reverse voltage applied (typical values) t rr (ns) 0 4 8 12 16 20 24 28 32 36 40 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) v r =120 v t j =25 c t j =125 c di f /dt(a/s) c(pf) 1 10 100 1 10 100 1000 f=1 mhz v osc =30 mv rms t j =25 c v r (v)
1N5806U package information doc id 15986 rev 1 5/7 2 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 6. leadless chip carrier 2 (lcc2a) package dimensions ref. dimensions millimeters inches min. typ. max. min. typ. max. a (1) 1. measurement prior to solder coating the mounting pads on bottom of package 1.86 2.03 2.20 0.073 0.080 0.087 b 4.54 4.67 4.87 0.179 0.184 0.192 c 2.33 2.46 2.59 0.92 0.97 0.102 d 1.53 1.70 1.87 0.060 0.067 0.074 e 0.48 - 0.71 0.019 - 0.028 f - 1.3 - - 0.051 - g - 2.16 - - 0.085 - h - 0.86 - - 00.34 - i - 0.15 - - 0.006 - r1 - 0.15 - - 0.006 - r2 - 0.20 - - 0.008 - note 1: the anode is identified by metallization in two top internal angles and the index mark. pin 2 cathode pin 1 anode 2 1 2 1 r2 r1 g e i h e note 1 note 1 note 1 f d a b c
ordering information 1N5806U 6/7 doc id 15986 rev 1 3 ordering information 4 revision history table 7. ordering information (1) 1. contact st sales office for information about the sp ecific conditions for produc ts in die form and qml-q versions. order code escc detailed specification package lead finish marking eppl weight packing 1N5806Ua1 - lcc2a gold plated 06ua1 - 0.12 g waffle pack 1N5806U01a 5101/014/13 gold plated 06u01a y 0.12 g 1N5806U02a 5101/014/14 solder dip 06u02a y table 8. document revision history date revision changes 27-jul-2009 1 first issue.
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