maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 350 v collector-emitter voltage v ceo 350 v emitter-base voltage v ebo 6.0 v collector current i c 500 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c unless otherwise noted) typ symbol test conditions min CMPTA42E cmpta92e max units i cbo v cb =200v 250 na i ebo v be =3.0v 100 na bv cbo i c =100a 350 590 500 v bv ceo i c =1.0ma 350 475 450 v bv ebo i e =100a 6.0 8.7 9.6 v v ce(sat) i c =50ma, i b =5.0ma 125 150 350 mv v be(sat) i c =20ma, i b =2.0ma 0.9 v h fe v ce =10v, i c =1.0ma 50 110 105 h fe v ce =10v, i c =10ma 50 110 105 h fe v ce =10v, i c =30ma 50 110 105 f t v ce =20v, i c =10ma, f=100mhz 100 mhz c ob v cb =20v, i e =0, f=1.0mhz 6.0 pf CMPTA42E npn cmpta92e pnp enhanced specification silicon complementary high voltage transistor sot-23 case central semiconductor corp. tm r0 (11-june 2002) description: the central semiconductor CMPTA42E & cmpta92e types are enhanced versions of the cmpta42 & cmpta92 complementary surface mount high voltage transistors. marking codes are c1de & c2de respectively . enhanced specifications: ? bv cbo from 300v min to 350v min. ? bv ceo from 300v min to 350v min. ? h fe from 25 min to 50 min. ? ? ? ? enhanced specification. ? ? ? ? ? ?
central semiconductor corp. tm sot-23 case - mechanical outline CMPTA42E npn cmpta92e pnp enhanced specification silicon complementary high voltage transistor r0 (11-june 2002) lead code: 1) base 2) emitter 3) collector marking code: CMPTA42E = c1de cmpta92e = c2de
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