dual n-channel jfet high frequency amplifier 2n5911 / 2n5912 features tight tracking low insertion loss good matching absolute maximum ratings (t a = 25 o c unless otherwise specified) gate-drain or gate-source voltage . . . . . . . . . . . . . . . . -25v gate current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50ma storage temperature range . . . . . . . . . . . . . -65 o c to +200 o c operating temperature range . . . . . . . . . . . -55 o c to +150 o c lead temperature (soldering, 10sec) . . . . . . . . . . . . . +300 o c one side both sides power dissipation 367mw 500mw derate above 25 o c3.0mw/ o c 4.0mw/ o c note: stresses above those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only and func tional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. ordering information part package temperature range 2n5911-12 hermetic to-99 -55 o c to +150 o c x2n5912 sorted chips in carriers -55 o c to +150 o c corporation pin configuration s2 g1 d2 d1 g2 s1 c to-99 electrical characteristics (t a = 25 o c unless otherwise specified) symbol parameter min max units test conditions i gss gate reverse current -100 pa v gs = -15v, v ds = 0 -250 na t a = 150 o c bv gss gate reverse breakdown voltage -25 v i g = -1 m a, v ds = 0 v gs(off) gate-source cutoff voltage -1 -5 v ds = 10v, i d = 1na v gs gate-source voltage -0.3 -4 v dg = 10v, i d = 5ma i g gate operating current -100 pa -100 na t a = 150 o c i dss saturation drain current (pulsewidth 300 m s, duty cycle 3%) 740ma v ds = 10v, v gs = 0v g fs common-source forward transconductance 5000 10,000 m s v dg = 10v, i d = 5ma f = 1khz g fs common-source forward transconductance (note 1) 5000 10,000 f = 100mhz g os common-source output conductance 100 f = 1khz g oss common-source output conductance (note 1) 150 f = 100mhz c iss common-source input capacitance (note 1) 5 pf f = 1mhz c rss common-source reverse transfer capacitance (note 1) 1.2 e n equivalent short circuit input noise voltage (note 1) 20 nv ? ``` hz f = 10khz nf spot noise figure (note 1) 1 db f = 10khz r g = 100k w cj1
2n5911 / 2n5912 corporation electrical characteristics (continued) (t a = 25 o c unless otherwise specified) symbol parameter 2n5911 2n5912 units test conditions min max min max | i g1 -i g2 | differential gate current 20 20 na v dg = 10v, i d = 5ma t a = 125 o c i dss1 i dss2 saturation drain current ratio 0.95 1 0.95 1 v ds = 10v, v gs = 0 (pulsewidth 300 m a, duty cycle 3%) | v gs1 -v gs2 | differential gate-source voltage 10 15 mv v dg = 10v, i d = 5ma d | v gs1 - v gs2 | d t gate-source voltage differential drift (measured at end points, t a and t b ) 20 40 m v/ o c t a = 25 o c t b = 125 o c 20 40 t a = -55 o c t b = 25 o c g fs1 g fs2 transconductance ratio 0.95 1 0.95 1 f = 1khz note 1: for design reference only, not 100% tested.
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