technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com p-channel j-fet equivalent to mil-prf-19500/476 t4-lds-0006 rev. 1 (063387) page 1 of 2 devices levels 2n5114 mq = jan equivalent 2n5115 mx = jantx equivalent 2n5116 mv = jantxv equivalent absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol all devices unit gate-source voltage (1) v gs 30 vdc drain-source voltage (1) v ds 30 vdc drain-gate voltage v dg 30 vdc gate current i g 50 madc power dissipation t a = +25 c (2) p t 0.500 w storage temperature range t stg -65 to +200 c (1) symmetrical geometry allows operation of thos e units with source / drain leads interchanged. (2) derate linearly 3.0 mw/ c for t a > 25 c. electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit gate-source breakdown voltage v ds = 0, i g = 1.0 a dc v (br)gss 30 vdc drain-source ?on? state voltage v gs = 0v dc, i d = -15ma dc v gs = 0v dc, i d = -7.0ma dc v gs = 0v dc, i d = -3.0ma dc 2n5114 2n5115 2n5116 v ds(on) -1.3 -0.8 -0.6 vdc gate reverse current v ds = 0, v gs = 20v dc i gss 500 padc drain current cutoff v gs = 12v dc, v ds = -15v dc v gs = 7.0v dc, v ds = -15v dc v gs = 5.0v dc, v ds = -15v dc 2n5114 2n5115 2n5116 i d(off) -500 -500 -500 padc zero gate voltage drain current v gs = 0, v ds = -18v dc v gs = 0, v ds = -15v dc v gs = 0, v ds = -15v dc 2n5114 2n5115 2n5116 i dss -30 -15 -5.0 -90 -60 -25 madc gate-source cutoff v ds = -15, i d = -1.0na dc v ds = -15, i d = -1.0na dc v ds = -15, i d = -1.0na dc 2n5114 2n5115 2n5116 v gs(off) 5.0 3.0 1.0 10 6.0 4.0 vdc to-18 (to-206aa)
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com p-channel j-fet equivalent to mil-prf-19500/476 t4-lds-0006 rev. 1 (063387) page 2 of 2 dynamic characteristics parameters / test conditions symbol min. max. unit small-signal drain-source ?on? state resistance v gs = 0, i d = -1.0ma dc 2n5114 2n5115 2n5116 r ds(on)1 75 100 175 small-signal drain-source ?on? state resistance v gs = 0, i d = 0; f = 1khz 2n5114 2n5115 2n5116 r ds(on)2 75 100 175 small-signal, common-source short-circ uit reverse transfer capacitance v gs = 12v dc, v ds = 0 v gs = 7.0v dc, v ds = 0 v gs = 5.0v dc, v ds = 0 2n5114 2n5115 2n5116 c rss 7.0 pf small-signal, common-source shor t-circuit input capacitance v gs = 0, v ds = -15v dc, f = 1.0mhz 2n5114, 2n5115 2n5116 c iss 25 27 pf switching characteristics parameters / test conditions symbol min. max. unit turn-on delay time 2n5114 2n5115 2n5116 t don 6 10 25 s rise time 2n5114 2n5115 2n5116 t r 10 20 35 s turn-off delay time 2n5114 2n5115 2n5116 see figure 2 of mil-prf-19500/476 t doff 6 8 20 s
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