? 2000 in?eon technologies corp. ?optoelectronics division ?san jose, ca www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) osram opto semiconductors gmbh & co. ohg ?regensburg, germany www.osram-os.com ?+49-941-202-7178 1 april 3, 2000-13 features low capacitance switch (5.0 pf) l/o isolation, 5300 v rms extremely high off-resistance (100 t ? ) load voltage 350 v linear, ac/dc operation clean bounce free switching low power consumption high reliability monolithic receptor agency approvals ul ?file no. e52744 csa ?certi?ation 093751 bsi/babt cert. no. 7980 vde 0884 app roval fimko app roval applications instrumentation ?thermocouple switching ?analog multiplexing reed relay replacement programmable logic controllers data acquisition test equipment description these ssrs (lh1541, 1 form a) are spst normally open switches which can replace electromechanical relays in many applications. the relays provide a low- capacitance, high-voltage switch contact with high off- resistance and low switch-offset voltage. these charac- teristics, combined with high-speed actuation, result in an ssr which is ideal for small signal and dc instrumen- tation applications. the relays are constructed by using a gaalas led for actuation control and an integrated monolithic die for the switch output. the die is comprised of a photodiode array, switch-control circuity, and low-capacitance mos- fet switches. LH1541AT1/aab1/aab1tr 1 form a solid state relay (low capacitance) part identi?ation part number description LH1541AT1 6-pin dip, tubes lh1541aab1 6-pin smd, gullwing, tubes lh1541aab1tr 6-pin smd, gullwing, tape and reel .014 (.35) .010 (.25) .150 (3.81) .110 (2.79) .150 (3.81) .130 (3.30) .020 (.051) min. .300 (7.62) typ. .035 (0.90) .031 (0.80) .100 (2.54) typ. .039 (1.00) min. .022 (0.55) .018 (0.45) .256 (6.50) .248 (6.30) .343 (8.70) .335 (8.50) pin one id. 6 5 4 1 2 3 18 typ. .347 (8.82) .300 (7.62) 4 typ. .343 (8.71) .335 (8.51) .256 (6.50) .248 (6.30) pin one i.d. .039 (0.99) min. .150 (3.81) .130 (3.30) .100 (2.54) .052 (1.33) .048 (1.22) 4 .040 (1.016) .020 (0.508) .0098 (.25) .0040 (.10) .012 (0.31) .008 (0.20) .300 (7.62) .395 (10.03) .375 (9.63) 3 to 7 18 min. .315 (8.00) typ. .050 (1.27) typ. 4 65 123 s' s dc ss' package dimensions in inches (mm) dip smd
? 2000 in?eon technologies corp. ?optoelectronics division ?san jose, ca LH1541AT1/aab1/aab1tr www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) osram opto semiconductors gmbh & co. ohg ?regensburg, germany www.osram-os.com ?+49-941-202-7178 2 april 3, 2000-13 absolute maximum ratings, t a =25 c stresses in excess of the absolute maximum ratings can cause permanent damage to the device. these are absolute stress ratings only. functional oper- ation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute maximum ratings for extended periods of time can adversely affect reliability. ambient temperature range ( t a ) .................................... ?0 to +85 c storage temperature range ( t stg ) ................................. ?0 to +150 c pin soldering temperature (t=10 s max) ( t s ) ............................. 260 c input/output isolation voltage ( v rms t=1.0 s, i iso =10 a max) ( v iso ) .............................. 5300 v rms led continuous forward current ( i f ) .........................................50 ma led reverse voltage ( i r 10 a) ( v r )........................................... 8.0 v dc or peak ac load voltage ( i l 50 a) ( v l ) .............................. 200 v continuous dc load current ( i l ) bidirectional operation..............................................................55 ma unidirectional operation............................................................ ?ma peak load current (t=100 ms) (single shot) ( i p ) ......................100 ma output power dissipation (continuous) ( p diss )........................ 550 mw recommended operating conditions ?0 ?0 0 20 40 60 80 50 20 10 30 0 40 i fon = 2.0 ma i fon = 3.0 ma i fon = 4.0 ma i fon = 5.0 to 20 ma ambient temperature ( c) load current (ma) electrical characteristics, t a =25 c minimum and maximum values are testing requirements. typical values are characteristics of the device and are the result of engineering evaluations. typical values are for information only and are not part of the testing requirements. * i f =5.0 ma parameter sym. min. typ. max. units test conditions input led forward current, switch turn-on i fon 0.6 2.0 ma i l =100 ma, t=10 ms led forward current, switch turn-off i foff 0.1 0.5 ma v l ?50 v led forward voltage v f 1.10* 1.19* 1.45* v i f =10 ma output on-resistance ac/dc: pin 4 (? to 6 (? r on 70 110 160 ? i f =5.0 ma, i l =50 ma dc: pin 4, 6 (+) to 5 (? i f =5.0 ma, i l =100 ma off-resistance r off 0.5 10000 g ? i f =0 ma, v l =?00 v off-state leakage current 0.4 200 na i f =0 ma, v l =?00 v 1.0 a i f =0 ma, v l =?00 v output capacitance pin 4 to 6 4.8 pf i f =0 ma, v l =1.0 v ?6 i f =0 ma, v l =50 v switch offset 0.15 v i f =5.0 ma transfer input/output capacitance c iso 0.8 pf v iso =1.0 v turn-on time t on 0.12 0.25 ms i f =5.0 ma, i l =50 ma turn-off time t off 0.3 0.25 ms i f =5.0 ma, i l =50 ma
? 2000 in?eon technologies corp. ?optoelectronics division ?san jose, ca LH1541AT1/aab1/aab1tr www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) osram opto semiconductors gmbh & co. ohg ?regensburg, germany www.osram-os.com ?+49-941-202-7178 3 april 3, 2000-13 typical performance characteristics figure 1. led voltage vs. temperature figure 2. current limit vs. temperature figure 3. led dropout voltage vs. temperature ambient temperature ( c) led forward voltage (v) 40 200 2040 6080 1.6 1.5 1.4 1.3 1.2 1.1 1.0 i f =1.0 ma i f =20 ma i f =50 ma i f =2.0 ma i f =5.0 ma i f =10 ma 40 40 10 30 20 0 20 10 40 30 200 204060 ambient temperature ( c ) 80 i f = 5.0 ma t = 5.0 ms v l = see elec. char . change in current limit (%) normalized to 25 c 40 0 20 ambient temperature ( c) 1.20 1.15 1.10 0.95 1.00 40 1.05 80 60 20 min. typ. i l = 100 ma led forward voltage (v) figure 4. led current for switch turn-on vs. temperature figure 5. on-resistance vs. temperature figure 6. switch capacitance vs. applied voltage 160 60 150 120 90 30 40 200 20406080 60 0 30 i l = 50 ma ambient temperature ( c ) led forward current for switch turn-on (%), normalized to 25 c 40 50 10 30 20 40 20 30 10 40 0 20 0 2040 6080 ambient temperature ( c) i l = 50 ma change in on-resistance (%) normalized to 25 c 01020 applied voltage (v) 6.0 5.0 0.0 30 4.0 100 40 3.0 2.0 1.0 50 60 70 80 90 capacitance (pf)
? 2000 in?eon technologies corp. ?optoelectronics division ?san jose, ca LH1541AT1/aab1/aab1tr www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) osram opto semiconductors gmbh & co. ohg ?regensburg, germany www.osram-os.com ?+49-941-202-7178 4 april 3, 2000-13 figure 7. insertion loss vs. frequency figure 8. leakage current vs. applied voltage figure 9. output isolation frequency (hz) 1.50 1.75 2.00 0 1.25 1.00 0.50 0.25 10 2 10 3 10 4 10 5 0.75 r l = 600 ? insertion loss (db) 90 0 50 100 150 200 250 300 load voltage (v) 100 70 80 60 40 30 50 20 10 0 350 400 i f = 0 ma t a = 25 c off-state leakage current (pa) frequency (hz) 100 80 60 40 20 0 10 2 10 3 10 4 10 5 10 6 10 7 isolation (db) v p =10 v r l =50 ? figure 10. switch offset voltage vs. temperature figure 11. leakage current vs. applied voltage at elevated temperatures figure 12. switch breakdown voltage vs. temperature 20 40 ambient temperature ( c) 3.5 0 50 70 60 30 3.0 1.5 2.0 2.5 0.5 1.0 80 90 i f = 5.0 ma switch offset voltage ( v) 240 0 20 40 60 80 100 120 load voltage (v) 270 180 210 150 90 60 120 30 0 140 200 160 180 85 c 70 c 50 c off-state leakage current (pa) ambient temperature ( c) 40 200 20406080 8 4 8 10 6 4 2 0 2 6 change in breakdown voltage (%) normalized to 25 c
? 2000 in?eon technologies corp. ?optoelectronics division ?san jose, ca LH1541AT1/aab1/aab1tr www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) osram opto semiconductors gmbh & co. ohg ?regensburg, germany www.osram-os.com ?+49-941-202-7178 5 april 3, 2000-13 figure 13. switch offset voltage vs. led current figure 14. turn-on time vs. temperature figure 15. turn-off time vs. temperature 010 led forward current (ma) 0.6 0 15 20 5 0.5 0.2 0.3 0.4 0.1 25 switch offset voltage ( v) 40 200 20406080 ambient temperature ( c ) 70 50 20 30 10 40 0 10 20 30 40 60 i f = 5.0 ma i l = 50 ma change in turn-on time (%) normalized to 25 c 120 40 40 200 20406080 80 160 140 40 100 80 60 20 20 60 0 ambient temperature ( c ) change in turn-off time (%) normalized to 25 c i l = 50 ma i f = 5.0 ma figure 16. turn-on time vs. led current figure 17. turn-off time vs. led current 0 0.25 0.50 0.75 1.00 1.25 1.50 0 5 10 15 20 +85 c +25 c 40 c led forward current (ma) turn-on time (ms) 020 40 0 30 50 40 10 30 20 10 40 c +25 c +85 c led forward current (ma) turn-on time (ms)
|
