EMA109 updated 11/11/2004 0.5 ? 3.0 ghz high linearity power mmic specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 3 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised november 2004 dimension: 760um x 700um features ? 0.5 ? 3.0 ghz bandwidth ? 24.0dbm typical output power ? -45dbc oimd3 @ 14dbm each tone pout ? 11.0 db typical power gain ? single bias supply ? 100% dc tested electrical characteristics (t a = 25 c) caution! esd sensitive device. symbol parameter/test conditions 1 min typ max units f operating frequency range 0.5 3.0 ghz p 1db power at 1db compression v dd = 8.0v, f = 2.4g 23.0 24.0 dbm gss small signal gain v dd = 8.0v, f = 2.4g 10.0 11.0 db imd3 output 3 rd order intermodulation distortion @ ? f=10mhz, each tone pout 14dbm v dd = 8.0v, f = 2.4g -45 -42 dbc rl in input return loss v dd = 8.0v -12 -8 db rl out output return loss v dd = 8.0v -12 -8 db i dd drain current 90 120 150 ma r th thermal resistance 1 70 o c/w note: 1. overall rth depends on die attach. absolute maximum ratings for continuous operation 1,2 symbol characteristic value v dd power supply voltage 8 v v gg gate voltage -3 v i dd drain current idss i gsf forward gate current 10 ma p in input power @ 3db compression p t total power dissipation 1.4 w t ch channel temperature 150c t stg storage temperature -65/+150c notes: 1. operating the device beyond any of the above ra tings may result in permanent damage or reduction of mttf. 2. bias conditions must also satisfy the following equation p t < (t ch ?t hs )/r th ; where t hs = temperature of heatsink, and p t = (v dd * i dd ) ? (p out ? p in ).
EMA109 updated 11/11/2004 0.5 ? 3.0 ghz high linearity power mmic specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 3 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised november 2004 typical performance: 1. p-1 vs vd EMA109c p-1(dbm) vs vd 20 21 22 23 24 25 0 0.5 1 1.5 2 2.5 3 frequency (ghz) p-1 (dbm) vd=5.5v vd=6.5v vd=8v 2. g-1 vs vd EMA109c g-1(db) vs vd 9 10 11 12 13 14 0 0.5 1 1.5 2 2.5 3 frequency (ghz) g-1 (db) vd=5.5v vd=6.5v vd=8v
EMA109 updated 11/11/2004 0.5 ? 3.0 ghz high linearity power mmic specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 3 of 3 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised november 2004 typical performance: 3. oip3 vs vd EMA109c oip3 vs vd 25 27 29 31 33 35 37 39 41 43 0 5 10 15 20 each tone pout (dbm) oip3 (dbm) vd=8v vd=6.5v vd=5.5v 4. small signal performance 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3 frequency (ghz) EMA109c small signal performance -30 -25 -20 -15 -10 -5 0 5 10 15 20 db(|s[1,1]|) * db(|s[2,1]|) * db(|s[2,2]|) *
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