ls4151 document number 85563 rev. 1.7, 20-aug-10 vishay semiconductors www.vishay.com 1 9612009 for technical questions with in your region, please c ontact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal fast switching diode features ? silicon epitaxial planar diode ? electrical data iden tical with the device 1n4151 ? quadromelf package ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? extreme fast switches mechanical data case: quadromelf sod-80 weight: approx. 34 mg cathode band color: black packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/2.5 k per 7" reel (8 mm tape), 12.5 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified part ordering code type marking remarks ls4151 ls4151-gs18 or ls4151-gs08 - tape and reel parameter test condition symbol value unit repetitive peak reverse voltage v rrm 75 v reverse voltage v r 50 v peak forward surge current t p = 1 s i fsm 2a repetitive peak forward current i frm 500 ma forward continuous current i f 300 ma average forward current v r = 0 i fav 150 ma power dissipation p tot 500 mw parameter test condition symbol value unit thermal resistance junction to ambient air on pc board 50 mm x 50 mm x 1.6 mm r thja 500 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c
www.vishay.com 2 document number 85563 rev. 1.7, 20-aug-10 ls4151 vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol min. ty p. max. unit forward voltage i f = 50 ma v f 880 1000 mv reverse voltage v r = 50 v i r 50 na v r = 50 v, t j = 150 c i r 50 a breakdown voltage i r = 5 a, t p /t = 0.01, t p = 0.3 ms v (br) 75 v diode capacitance v r = 0, f = 1 mhz, v hf = 50 mv c d 2pf reverse recovery time i f = i r = 10 ma, i r = 1 ma t rr 4ns i f = 10 ma, v r = 6 v, i r = 0.1 x i r , r l = 100 t rr 2ns figure 1. reverse current vs. junction temperature figure 2. forward current vs. forward voltage 040 8 0 120 160 0.01 0.1 1 10 100 i-re v erse c u rrent ( a) r t j -j u nction temperat u re (c) 200 94 9151 v r =50 v scattering limit 00.40. 8 1.2 1.6 0.1 1 10 100 1000 i- for w ard c u rrent (ma) f v - for w ard v oltage ( v ) 2.0 94 9152 f t = 25 c j t = 100 c j figure 3. diode capacitance vs. reverse voltage 0.1 1 10 0 0.5 1.0 1.5 2.0 3.0 c - diode capacitance (pf) d v r -re v erse v oltage ( v ) 100 94 9153 2.5 f=1mhz t j = 25 c
ls4151 document number 85563 rev. 1.7, 20-aug-10 vishay semiconductors www.vishay.com 3 for technical questions with in your region, please c ontact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches): quadromelf sod-80 96 12071 cathode identification 1.25 (0.049) min. 3.7 (0.146) 3.3 (0.130) 0.47 (0.019) max. 2.5 (0.09 8 ) max. 1.6 (0.063) 1.4 (0.055) 5 (0.197) ref. foot print recommendation: 2 (0.079) min. > r3 (r0.11 8 ) glass 1.7 (0.067) glass the gap b et w een pl u g and glass can b e either on cathode or anode side
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