1996. 1. 28 1/3 semiconductor technical data KN3906 epitaxial planar pnp transistor revision no : 0 general purpose application. switching application. features low leakage current : i cex =-50na(max.), @v ce =-30v, v eb =-3v. low saturation voltage : v ce(sat) =-0.4v(max.) @i c =-50ma, i b =-5ma. complementary to kn3904. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ characteristic symbol rating unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v collector current i c -200 ma base current i b -50 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1
1996. 1. 28 2/3 revision no : 0 electrical characteristics (ta=25 1 ) KN3906 * pulse test : pulse width # 300 s, duty cycle # 2%. characteristic symbol test condition min. typ. max. unit collector cut-off current i cex v ce =-30v, v eb =-3v - - -50 na collector-base breakdown voltage v (br)cbo i c =-10 a, i e =0 -40 - - v collector-emitter breakdown voltage * v (br)ceo i c =-1ma, i b =0 -40 - - v emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5 - - v dc current gain * h fe (1) v ce =-1v, i c =-0.1ma 60 - - h fe (2) v ce =-1v, i c =-1ma 80 - - h fe (3) v ce =-1v, i c =-10ma 100 - 300 h fe (4) v ce =-1v, i c =-50ma 60 - - h fe (5) v ce =-1v, i c =-100ma 30 - - collector-emitter saturation voltage * v ce(sat) 1 i c =-10ma, i b =-1ma - - -0.25 v v ce(sat) 2 i c =-50ma, i b =-5ma - - -0.4 base-emitter saturation voltage * v be(sat) 1 i c =-10ma, i b =-1ma -0.65 - -0.85 v v be(sat) 2 i c =-50ma, i b =-5ma - - -0.95 transition frequency f t v ce =-20v, i c =-10ma, f=100mhz - 250 - mhz collector output capacitance c ob v cb =-5v, i e =0, f=1mhz - - 4.5 pf
1996. 1. 28 3/3 KN3906 revision no : 0 capacitance c (pf) 0 ob -30 -10 -3 -1 collector-base voltage v (v) cb c - v h - i c collector current i (ma) -1 -3 -10 -30 1k fe dc current gain h 10 collector current i (ma) saturation voltage -0.3 -0.1 be(sat) -3 -1 c v , v - i fe c -300 -1k 30 50 100 300 500 -100 v =-10v ce ce v =-1v be(sat) ce(sat) c v ,v (v) ce(sat) -10 -30 -100 -0.01 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -10 v be(sat) ce(sat) v ob cb -100 -200 i /i =10 c b 2 4 6 8 10 i =0 f=100khz e collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta p (mw) 25 50 75 100 125 150 175 100 200 300 400 500 600 700
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