haf2012(l),haf2012(s) silicon n channel mos fet series power switching ade-208-677a (z) 2nd. edition july 2000 this fet has the over temperature shut?own capability sensing to the junction temperature. this fet has the built?n over temperature shut?own circuit in the gate area. and this circuit operation to shut?own the gate voltage in case of high junction temperature like applying over power consumption, over current etc. features logic level operation (4 to 6 v gate drive) high endurance capability against to the short circuit built?n the over temperature shut?own circuit latch type shut?own operation (need 0 voltage recovery) outline gate resistor tempe rature sencing circuit latch circuit gate shut down circuit d s g ldpak 1. gate 2. drain 3. source 4. drain 1 2 3 4 1 2 3 4
haf2012(l), haf2012(s) 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 16 v gate to source voltage v gss ?.8 v drain current i d 20 a drain peak current i d(pulse) note1 40 a body-drain diode reverse drain current i dr 20 a channel dissipation pch note2 50 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c note: 1. pw 10 m s, duty cycle 1 % 2. value at ta = 25 c typical operation characteristics item symbol min typ max unit test conditions input voltage v ih 3.5 v v il 1.2 v input current i ih1 100 m a vi = 8v, v ds = 0 (gate non shut down) i ih2 50 m a vi = 3.5v, v ds = 0 i il 1 m a vi = 1.2v, v ds = 0 input current i ih(sd)1 0.8 ma vi = 8v, v ds = 0 (gate shut down) i ih(sd)2 0.35 ma vi = 3.5v, v ds = 0 shut down temperature t sd 175 c channel temperature gate operation voltage v op 3.5 13 v
haf2012(l), haf2012(s) 3 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain current i d1 10a v gs = 3.5v, v ds = 2v drain current i d2 10 ma v gs = 1.2v, v ds = 2v drain to source breakdown voltage v (br)dss 60v i d = 10ma, v gs = 0 gate to source breakdown voltage v (br)gss 16v i g = 100 m a, v ds = 0 gate to source breakdown voltage v (br)gss ?.8 v i g = ?00 m a, v ds = 0 gate to source leak current i gss1 100 m av gs = 8v, v ds = 0 i gss2 50 m av gs = 3.5v, v ds = 0 i gss3 1 m av gs = 1.2v, v ds = 0 i gss4 ?00 m av gs = ?.4v, v ds = 0 input current (shut down) i gs(op)1 0.8 ma v gs = 8v, v ds = 0 i gs(op)2 0.35 ma v gs = 3.5v, v ds = 0 zero gate voltege drain current i dss 250 m av ds = 50 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.25 v i d = 1ma, v ds = 10v static drain to source on state resistance r ds(on) ?065m w i d = 10a, v gs = 4v note3 static drain to source on state resistance r ds(on) ?043m w i d = 10a, v gs = 10v note3 forward transfer admittance |y fs | 6 12 s i d = 10a, v ds = 10v note3 output capacitance coss 630 pf v ds = 10v , v gs = 0 f = 1 mhz turn-on delay time t d(on) 7.5 m si d = 5a, v gs = 5v rise time t r ?9 m sr l = 6 w turn-off delay time t d(off) ?4 m s fall time t f ?6 m s body?rain diode forward voltage v df 1.0 v i f = 20a, v gs = 0 body?rain diode reverse recovery time t rr 110 ns i f = 20a, v gs = 0 dif/ dt =50a/ m s over load shut down t os1 1.8 ms v gs = 5v, v dd = 12v operation time note4 t os2 0.7 ms v gs = 5v, v dd = 24v note: 3. pulse test 4. include the junction temperature rise of the over loaded condition. ? see characteristic curve of haf2001.
haf2012(l), haf2012(s) 4 main characteristics 80 60 40 20 0 channel dissipation pch (w) 50 100 150 200 case temperature tc ( c) power vs. temperature derating
haf2012(l), haf2012(s) 5 package dimensions hitachi code jedec eiaj mass (reference value) ldpak (l) 1.4 g 10.2 0.3 0.86 0.76 0.1 2.54 0.5 2.54 0.5 + 0.2 ?0.1 1.2 0.2 4.44 0.2 1.3 0.15 2.59 0.2 0.4 0.1 11.0 0.5 8.6 0.3 10.0 11.3 0.5 + 0.3 ?0.5 (1.4) 1.27 0.2 as of january, 2001 unit: mm
haf2012(l), haf2012(s) 6 hitachi code jedec eiaj mass (reference value) ldpak (s)-(1) 1.3 g 10.2 0.3 1.27 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ?0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ?0.1 0.4 0.1 0.86 + 0.2 ?0.1 2.54 0.5 2.54 0.5 1.2 0.2 3.0 + 0.3 ?0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2001 unit: mm
haf2012(l), haf2012(s) 7 hitachi code jedec eiaj mass (reference value) ldpak (s)-(2) 1.35 g 10.2 0.3 1.27 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ?0.5 4.44 0.2 1.3 0.2 0.1 + 0.2 ?0.1 0.4 0.1 0.86 + 0.2 ?0.1 2.54 0.5 2.54 0.5 1.2 0.2 5.0 + 0.3 ?0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2001 unit: mm
haf2012(l), haf2012(s) 8 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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