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vishay siliconix dg9236 document number: 67049 s11-0598-rev. b, 25-apr-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual spdt analog switch features ? leakage current < 0.5 na max. at 85 c ? low switch capacitance (c soff , 2 pf typ.) ?r ds(on) 101 ? max. 800 mhz bandwidth ? fully specified with si ngle supply operation at 16 v ? low voltage, 1.8 v cmos/ttl compatible ? excellent isolation and crosstalk performance (typ. > - 60 db at 10 mhz) ? fully specified from - 40 c to 85 c ? latch-up current 300 ma per jesd78 ? lead (pb)-free low profile miniqfn-10 (1.4 mm x 1.8 mm x 0.55 mm) ? compliant to rohs directive 2002/95/ec applications ? high-end data acquisition ? medical instruments ? precision instruments ? high speed communications applications ? automated test equipment ? sample and hold applications description the dg9236 is a cmos, dual spdt analog switch designed to operate from v+ = 2.7 v to v+ = 16 v max. operating, single supply. all control logic inputs have a guaranteed 1.8 v logic high threshold when operation from a + 16 v power supply. this makes the dg9236 ideally suited to interface directly with low voltage micro-processor control signals. processed with high density cmos technology, the dg9236 while providing ultra low parasitic capacitance of 2 pf for cs (off) and 8.4 pf for cd (on) . other performance features are: 3 db bandwidth, 800 mhz, - 70 db crosstalk and 62 db off isolation at 10 mhz frequency. key applications for the dg9236 are logic level translation, pulse generator, and high speed or low noise signal switching in precision instrumentations and portable device designs. the operation temperature range is specified from - 40 c to + 85 c. the dg9236 is available in space saving 1.4 mm x 1.8 mm miniqfn10 package. as a committed partner to the community and the environment, vishay siliconix manufactures this product with lead (pb)-free device termination. the miniqfn-10 package has a nickel-palladium-gold device termination and is represented by the lead (pb)-fr ee ?-e4? suffix to the ordering part number. the nickel-palladium-gold device terminations meet all jedec standards for reflow and msl rating. functional block diagram and pin configuration truth table selected input on switches a1 a0 dg9236 x 0 d1 to s1a x 1 d1 to s1b 0 x d2 to s2a 1 x d2 to s2b de v ice marking: 3x for dg9236 x = date/lot tracea b ility code 1 2 3 4 5 6 7 8 9 10 a1 a0 v + s1a g n d s1b d1 d2 s2b s2a top v ie w dg9236 miniqfn - 10l pin 1: lo n g lead 3x pin 1 logic rohs compliant
www.vishay.com 2 document number: 67049 s11-0598-rev. b, 25-apr-11 vishay siliconix dg9236 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: ? - 40 c to 85 c datasheet limits apply. notes: a. signals on sx, dx, or ax exceeding v+ or gn d will be clamped by internal diodes. li mit forward diode current to maximum curre nt ratings. b. all leads welded or soldered to pc board. c. derate 2.6 mw/c above 70 c. d. manual soldering with iron is not recommended for leadless co mponents. the miniqfn-10 is a leadless package. the end of the l ead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper l ip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. ordering information temp. range package part number - 40 c to 85 c 10 pin miniqfn DG9236DN-T1-E4 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter limit unit v+ to gnd 18 v digital inputs a , v s , v d (v+) + 0.3 or 30 ma, whichever occurs first continuous current (any terminal) 30 ma peak current, s or d (pulsed 1 ms, 10 % duty cycle) 100 storage temperature - 65 to 150 c power dissipation (package) b 10 pin miniqfn c, d 208 mw thermal resistance (package) b 10 pin miniqfn 357 c/w specifications (for 16 v supply) parameter symbol test conditions unless otherwise specified v+ = 16 v, v a0, a1 = 1.8 v, 0.5 v a temp. b typ. c - 40 c to 85 c unit min. d max. d analog switch analog signal range e v analog full 16 v on-resistance r ds(on) i s = 1 ma, v d = 0.7 v, 2.6 v, 8 v, 11 v, 15.3 v room full 101 145 160 ? on-resistance match ? r on i s = 1 ma, v d = 0.7 v, 2.6 v, 8 v, 11 v, 15.3 v room full 214 15 on-resistance flatness r flatness i s = 1 ma, v d = 0.7 v, 2.6 v, 8 v, 11 v, 15.3 v room full 38 55 60 switch off leakage current i s(off) v+ = 16 v, v d = 1 v/15 v, v s = 15 v/1 v room full 0.01 - 1 - 2 1 2 na i d(off) room full 0.01 - 1 - 2 1 2 channel on leakage current i d(on) v+ = 16 v, v d = v s 1 v/15 v room full 0.01 - 1 - 2 1 2 digital control input current, v in low i il v ax = 0.5 v full 0.005 - 0.1 0.1 a input current, v in high i ih v ax = 1.8 v full 0.005 - 0.1 0.1 input capacitance e c in f = 1 mhz room 3 pf dynamic characteristics tu r n - o n t i m e t on r l = 300 ? , c l = 35 pf see figure 1, 2 room full 30 70 80 ns turn-off time t off room full 17 55 65 break-before-make t bbm room full 19 25 1 1 charge injection e q inj v g = 0 v, r g = 0 ? , c l = 1 nf room 6 pc off isolation e oirr r l = 50 ? , c l = 5 pf, f = 10 mhz room - 62 db bandwidth e bw r l = 50 ? room 800 mhz channel-to-channel crosstalk e x ta l k r l = 50 ? , c l = 5 pf, f = 10 mhz room - 70 db
document number: 67049 s11-0598-rev. b, 25-apr-11 www.vishay.com 3 vishay siliconix dg9236 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic characteristics source off capacitance e c s(off) f = 1 mhz room 2 pf channel on capacitance e c d(on) room 8.4 total harmonic distortion e thd signal = 1 v rms , 20 hz to 20 khz, r l = 600 ? room 0.18 % power supplies power supply current i+ v in = 0 v, or v+ room full 0.013 0.022 0.5 1.0 a ground current i gnd room full 0.01 0.021 - 0.5 - 1.0 specifications (for 16 v supply) parameter symbol test conditions unless otherwise specified v+ = 16 v, v a0, a1 = 1.8 v, 0.5 v a temp. b typ. c - 40 c to 85 c unit min. d max. d specifications (for 5 v supply) parameter symbol test conditions unless otherwise specified v+ = 5 v, v a0, a1 = 1.4 v, 0.5 v a temp. b typ. c - 40 c to 85 c unit min. d max. d analog switch analog signal range e v analog full 5 v on-resistance r ds(on) i s = 1 ma, v d = 0 v, 3 v, 3 . 5 v room full 301 365 380 ? on-resistance match ? r on i s = 1 ma, v d = 0 v, 3 v, 3 . 5 v room full 314 15 switch off leakage current i s(off) v+ = 5.5 v, v d = 1 v/4.5 v, v s = 4.5 v/1 v room full 0.01 - 1 - 1.2 1 1.2 na i d(off) room full 0.01 - 1 - 1.2 1 1.2 channel on leakage current i d(on) v+ = 5.5 v, v s = v d = 1 v/4.5 v room full 0.01 - 1 - 1.2 1 1.2 digital control input current, v in low i l v ax = 0.5 v full 0.005 - 0.1 0.1 a input current, v in high i h v ax = 1.4 v full 0.005 - 0.1 0.1 input capacitance c in f = 1 mhz room 3 pf dynamic characteristics tu r n - o n t i m e t on r l = 300 ? , c l = 35 pf see figure 1, 2 room full 70 100 110 ns turn-off time t off room full 17 70 80 break-before-make-time t bmm room full 42 5 1 charge injection e q inj c l = 1 nf, r gen = 0 ? , v gen = 0 v full 2 pc off-isolation e oirr f = 10 mhz, r l = 50 ? , c l = 5 pf room - 62 db crosstalk e x ta l k room - 70 bandwidth e bw r l = 50 ? room 570 mhz total harmonic distortion e thd signal = 1 v rms, 20 hz to 20 khz, r l = 600 ? room 2.4 % source off capacitance e c s(off) f = 1 mhz room 2.1 pf channel on capacitance e c d(on) 8.1 power supplies power supply current i+ v in = 0 v, or v+ room full 0.001 0.5 1 a ground current i gnd room full - 0.001 - 0.5 - 1
www.vishay.com 4 document number: 67049 s11-0598-rev. b, 25-apr-11 vishay siliconix dg9236 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. v in = input voltage to perform proper function. b. room = 25 oc, full = as determined by the operating temperature. c. typical value are for design aid only, not guaranteed nor subject to production testing. d. the algebraic convention whereby the most negative value is a minimum and the most posit ive a maximum, is used in this datash eet. e. guaranteed by design, not su bject to production test. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (for 3 v supply) parameter symbol test conditions unless otherwise specified v+ = 3 v, v a0, a1 = 1.4 v, 0.5 v a temp. b typ. c - 40 c to + 85 c unit min. d max. d analog switch analog signal range e v analog full 3 v on-resistance r ds(on) i s = 1 ma, v d = + 1.5 v room full 732 795 810 ? on-resistance match ? r on i s = 1 ma, v d = + 1.5 v room full 516 17 switch off leakage current (for 16 pin miniqfn) i s(off) v+ = 3.3 v, v- = 0 v v d = 1 v/3 v, v s = 3 v/1 v room full 0.01 - 1 - 1.2 1 1.2 na i d(off) room full 0.01 - 1 - 1.2 1 1.2 channel on leakage current (for 16 pin miniqfn) i d(on) v+ = 3.3 v, v- = 0 v, v s = v d = 1 v/3 v room full 0.01 - 1 - 1.2 1 1.2 digital control input current, v in low i l v ax = 0.5 v full 0.005 - 0.1 0.1 a input current, v in high i h v ax = 1.4 v full 0.005 - 0.1 0.1 input capacitance c in f = 1 mhz room 3.1 pf dynamic characteristics enable turn-on time t on r l = 300 ? , c l = 35 pf see figure 1, 2 room full 30 150 170 ns enable turn-off time t off room full 20 110 120 break-before-make-time t bmm room full 19 25 5 1 not limit charge injection e q inj c l = 1 nf, r gen = 0 ? , v gen = 0 v full 1 pc off-isolation e oirr f = 10 mhz, r l = 50 ? , c l = 5 pf room - 63 db crosstalk e x ta l k room - 70 bandwidth e bw r l = 50 ? room 183 mhz total harmonic distortion e thd signal = 1 v rms, 20 hz to 20 khz, r l = 600 ? room 5.5 % source off capacitance e c s(off) f = 1 mhz room 2.1 pf channel on capacitance e c d(on) 8.3 power supplies power supply current i+ v in = 0 v, or v+ room full 0.001 0.5 1 a ground current i gnd room full - 0.001 - 0.5 - 1
document number: 67049 s11-0598-rev. b, 25-apr-11 www.vishay.com 5 vishay siliconix dg9236 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) r on vs. v d and single supply voltage r on vs. analog voltage and temperature r on vs. analog voltage and temperature 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 0246810 v d - analog voltage (v) r on - on-resistance ( ? ) v cc = 3.0 v v cc = 5.0 v v cc = 10.8 v t = 25 c i s = 1 ma v cc = 2.7 v 0 50 100 150 200 250 300 350 400 450 500 012345 v d - analog voltage (v) r on - on-resistance ( ? ) v cc = 5 v i s = 1 ma - 40 c + 85 c + 25 c 0 25 50 75 100 125 150 175 200 02468101214 v d - analog voltage (v) r on - on-resistance ( ? ) v cc = 12 v i s = 1 ma - 40 c + 85 c + 25 c r on vs. v d and single supply voltage r on vs. analog voltage and temperature r on vs. analog voltage and temperature 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 0 2 4 6 8 10121416 v d - analog voltage (v) r on - on-resistance ( ? ) v cc = 12 v v cc = 16 v v cc = 17.6 v t = 25 c i s = 1 ma v cc = 13.2 v v cc = 14.6 v v d - analog voltage (v) r on - on-resistance ( ? ) v cc = 3 v i s = 1 ma - 40 c + 85 c + 25 c 0 100 200 300 400 500 600 700 800 900 00.511.522.53 0 25 50 75 100 125 150 175 200 0 5 10 15 20 v d - analog voltage (v) r on - on-resistance ( ? ) v cc = 16 v i s = 1 ma - 40 c + 85 c + 25 c
www.vishay.com 6 document number: 67049 s11-0598-rev. b, 25-apr-11 vishay siliconix dg9236 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) supply current vs. temperature supply current vs. input switching frequency leakage current vs. temperature temperature (c) supply current (na) i+ v cc = 16 v 0.001 0.01 0.1 1 10 100 - 50 0 50 100 150 i gnd input switching frequency (hz) i cc - supply current (a) 100 pa 1 na 10 na 100 na 1 a 10 a 100 a 1 ma 10 ma 10 100 1k 10k 100k 1m 10m v+ = 17.6 v v+ = 3 v v+ = 5 v v+ = 16 v v+ = 12 v 1 10 100 1000 10 000 100 000 - 50 0 50 100 150 temperature (c) leakage current (pa) i d(off) i d(on) v cc = + 16 v i s(off) supply current vs. v in and temperature leakage current vs. temperature leakage current vs. analog voltage 02 4 6 810121416 100 ma 10 ma 1 ma 100 a 10 a 1 a 100 na 10 na 1 na 100 pa 10 pa 1 pa temperature (c) i+ - supply current (a) v+ = 16 v - 40 c + 85 c + 25 c 1 10 100 1000 10 000 100 000 - 60 - 40 - 20 0 20 40 60 80 100 120 140 temperature (c) leakage current (pa) i d(off) i d(on) i s(off) v cc = + 13.2 v 0 2 4 6 8 10 12 14 16 18 -100 -80 -60 -40 -20 0 20 40 60 80 100 v d - analog voltage (v) leakage current (pa) i s(off) v+ = 16 v t = 25 c i d(on) i d(off)
vishay siliconix dg9236 document number: 67049 s11-0598-rev. b, 25-apr-11 www.vishay.com 7 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) leakage current vs. analog voltage switching time vs. temperature t on /t off insertion loss, off-isolation, crosstalk vs. frequency 012345678910111213141516 - 500 - 400 - 300 - 200 - 100 0 100 200 300 400 500 v d - analog voltage (v) leakage current (pa) v+ = 16 v t = 85 c i d(off) i d(on) i s(off) temperature (c) t on(en) , t off(en) - switching time (ns) t on v cc = + 12 v t on v cc = + 16 v 0 10 20 30 40 50 - 60 - 40 - 20 0 20 40 60 80 100 120 140 t off v cc = + 12 v t off v cc = + 16 v frequency (hz) l oss , o irr , x talk (db) loss oirr x talk (adjacent) 100k 1m 10m 100m 1g - 110 - 100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 v+ = 16 v gnd = 0 v r l = 50 ? temperature (c) t on(en) , t off(en) - switching time (ns) t on v cc = + 3 v 0 40 80 120 160 200 - 60 - 40 - 20 0 20 40 60 80 100 120 140 t on v cc = + 5 v t off v cc = + 5 v t off v cc = + 3 v temperature (c) t bbm - switching time (ns) - 60 - 40 - 20 0 20 40 60 80 100 120 140 dg9236 t bbm v cc = + 3 v 0 20 40 60 80 100 120 140 t bbm v cc = + 5 v t bbm v cc = + 12 v t bbm v cc = + 16 v source volts charge injection (pc) -8 -6 -4 -2 0 2 4 6 0 2 4 6 8 1012141618 t = 25 c c l = 1 nf v cc = 17.6 v v cc = 12 v v cc = 3 v v cc = 5 v
www.vishay.com 8 document number: 67049 s11-0598-rev. b, 25-apr-11 vishay siliconix dg9236 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) test circuits supply current vs. v in and temperature 0 2 4 6 8 1012141618 20 power supply current (na) v in (v) i pos v + 5 v i pos v + 12 v i pos v + 16 v i pos v + 17.6 v 10 000 000 1 000 000 100 000 10 000 1000 100 10 1 0.1 0.01 0.001 switching threshold (ower) s. single supply voltage v t - switching threshold (v) v + - supply voltage (v) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 2 4 6 8 10 12 14 16 18 20 22 t s. reuency frequency (hz) thd (%) 0.001 0.01 0.1 1 10 100 10 100 1000 10 000 100 000 dg 9236 v+ = 13.2 v r l = 600 ? v signal = 1 v rms figure 1. enable switching time 0 v v cc 50 % 50 % 90 % t o n s1a or s2a o n v o v ax v s1a or v s2a 0 v t r < 5 ns t f < 5 ns t off 90 % a0 or a1 g n d v + v + v o 50 300 35 pf d1 or d2 s1a or s2a s1b or s2b v +
vishay siliconix dg9236 document number: 67049 s11-0598-rev. b, 25-apr-11 www.vishay.com 9 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits figure 2. break-before-make a0 a1 g n d v + v o 50 300 35 pf d1 or d2 sxa - sxb 0 v v cc 50 % 8 0 % t d v o v a0,a1 v sxa or v sxb v + v + 0 v t r < 5 ns t f < 5 ns figure 3. charge injection a0 or a1 g n d v + v + v o c l 1 nf d1 or d2 sxa or sxb 0 v v cc v o v ax r g v g o n off charge injection = v x c o l off v o t r < 5 ns t f < 5 ns figure 4. insertion loss a0 or a1 g n d v + v + v out d1 or d2 s1a or s2a v g r g = 50 50 v i n n et w ork analyzer insertion loss = 20 log v out v i n v + figure 5. off-isolation a0 a1 g n d v + v + v out d1 or d2 sxa or sxb v g r g = 50 50 v i n n et w ork analyzer off isolation = 20 log v out v i n
www.vishay.com 10 document number: 67049 s11-0598-rev. b, 25-apr-11 vishay siliconix dg9236 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67049 . figure 6. crosstalk a0 or a1 g n d v + v + v out d1 or d2 s1a or s2a v g r g = 50 50 v i n n et w ork analyzer cross talk = 20 log v out v i n 50 s1b or s2b v + figure 7. source/drain capacitance a0 or a1 g n d v + v - v + d1 or d2 s1a or s2a | to | s2a or s2b impedance analyzer v - v +
vishay siliconix package information document number: 74496 12-feb-07 www.vishay.com 1 mini qfn-10l case outline dim millimeters inches min. nam. max. min. nam. max. a 0.50 0.55 0.60 0.0197 0.0217 0.0236 a1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.15 ref 0.006 ref d 1.75 1.80 1.85 0.069 0.071 0.073 e 1.35 1.40 1.45 0.053 0.055 0.057 e 0.40 bsc 0.016 bsc l 0.35 0.40 0.45 0.014 0.016 0.018 l1 0.45 0.50 0.55 0.0177 0.0197 0.0217 ecn t-07039-rev. a, 12-feb-07 dwg: 5957
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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