MRF9210R3 1 rf device data freescale semiconductor rf power field effect transistor n ? channel enhancement ? mode lateral mosfet designed for broadband commercial and industrial applications with frequencies from 865 to 895 mhz. the high gain and broadband performance of this device make it ideal for large ? signal, common source amplifier applications in 26 volt base station equipment. ? typical cdma performance @ 880 mhz, 26 volts, i dq = 2 x 950 ma is ? 95 cdma pilot, sync, paging, traffic codes 8 through 13 output power ? 40 watts power gain ? 16.5 db efficiency ? 25.5% adjacent channel power ? 750 khz: ? 46.2 dbc @ 30 khz bw 1.98 mhz: ? 60 dbc @ 30 khz bw ? internally matched, controlled q, for ease of use ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 880 mhz, 40 watts avg. n ? cdma ? excellent thermal stability ? characterized with series equivalent large ? signal impedance parameters ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain ? source voltage v dss ? 0.5, +65 vdc gate ? source voltage v gs ? 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 565 3.2 w w/ c storage temperature range t stg ? 65 to +150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1) unit thermal resistance, junction to case r jc 0.31 c/w table 3. esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) charge device model c5 (minimum) 1. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. mrf9210 rev. 2, 1/2005 freescale semiconductor technical data case 375g ? 04, style 1 ni ? 860c3 MRF9210R3 880 mhz, 200 w, 26 v lateral n ? channel broadband rf power mosfet ? freescale semiconductor, inc., 2005. all rights reserved.
2 rf device data freescale semiconductor MRF9210R3 table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0) i dss ? ? 1 adc gate ? source leakage current (v gs = 5 vdc, v ds = 0) i gss ? ? 1 adc on characteristics (1) gate threshold voltage (v ds = 10 vdc, i d = 330 adc) v gs(th) 1.5 2.8 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 800 madc) v gs(q) 2.5 3.3 4.5 vdc drain ? source on ? voltage (v gs = 10 vdc, i d = 2.2 adc) v ds(on) ? 0.2 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 6.7 adc) g fs ? 8.8 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 3.6 ? pf functional tests (in freescale test fixture, 50 ohm system) (2) single ? carrier n ? cdma, 1.2288 mhz channel bandwidth carrier, peak/avg. ratio = 9.8 db @ 0.01% probability on ccdf n ? cdma common ? source amplifier power gain (v dd = 26 vdc, p out = 40 w avg. n ? cdma, i dq = 2 x 950 ma, f = 880 mhz) g ps 15.8 16.5 ? db n ? cdma drain efficiency (v dd = 26 vdc, p out = 40 w avg. n ? cdma, i dq = 2 x 950 ma, f = 880 mhz) 23 25.5 ? % adjacent channel power ratio (v dd = 26 vdc, p out = 40 w avg. n ? cdma, i dq = 2 x 950 ma, f = 880 mhz; acpr @ 40 w, 1.23 mhz bandwidth, 750 khz channel spacing) acpr ? ? 46.2 ? 45 dbc input return loss (v dd = 26 vdc, p out = 40 w avg. n ? cdma, i dq = 2 x 950 ma, f = 880 mhz) irl 9 17.5 ? db n ? cdma common ? source amplifier power gain (v dd = 26 vdc, p out = 40 w avg. n ? cdma, i dq = 2 x 950 ma, f = 865 mhz and 895 mhz) g ps ? 16.5 ? db n ? cdma drain efficiency (v dd = 26 vdc, p out = 40 w avg. n ? cdma, i dq = 2 x 950 ma, f = 865 mhz and 895 mhz) ? 25.5 ? % adjacent channel power ratio (v dd = 26 vdc, p out = 40 w avg. n ? cdma, i dq = 2 x 950 ma, f = 865 mhz and 895 mhz; acpr @ 40 w, 1.23 mhz bandwidth, 750 khz channel spacing) acpr ? ? 47.5 ? dbc input return loss (v dd = 26 vdc, p out = 40 w avg. n ? cdma, i dq = 2 x 950 ma, f = 865 mhz and 895 mhz) irl ? 15 ? db output mismatch stress (v dd = 26 vdc, p out = 40 w avg. n ? cdma, i dq = 2 x 950 ma, f = 880 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power 1. each side of device measured separately. 2. device measured in push ? pull configuration.
MRF9210R3 3 rf device data freescale semiconductor table 5. 880 mhz test circuit component designations and values part description part number manufacturer b1, b2 11 ? rf beads, surface mount (0805) 2508051107y0 fair ? rite balun 1, balun 2 0.8 ? 1 ghz xinger balun 3a412 anaren c1 27 pf chip capacitor 100b270jp500x atc c2 12 pf chip capacitor (0603) 06035j120gbt avx / kyocera c3, c4 3.3 pf chip capacitors (0603) 06035j3r3bbt avx / kyocera c5 9.1 pf chip capacitor 180r8r2jw500x atc c6 4.3 pf chip capacitor 100b4r3cp500x atc c7 0.4 ? 2.5 pf variable capacitor 27283pc gigatronics c8 12 pf chip capacitor 100b120jp500x atc c9, c10 470 f, 63 v electrolytic capacitors naczf471m63v (18x22) nippon c11, c12, c13, c14 22 f, 35 v tantalum chip capacitors t491x226k035as kemet c15, c17, c19, c21 0.01 f, 100 v chip capacitors c1825c103j1gac kemet c16, c18 0.56 f, 50 v chip capacitors c1825c564j5gac kemet c20, c22 2.2 f, 50 v chip capacitors c1825c225j5rac3810 kemet c23, c24 47 f, 16 v tantalum chip capacitors tpsd476k016r0150 avx l1 12 nh inductor (0603) 0603hc ? 12nhjbu coilcraft l2 22 nh inductor b07t ? 5 coilcraft l3, l4 12.5 nh inductors a04t ? 5 coilcraft l5, l6 10 nh inductors (0603) 0603hc ? 10nhjbu coilcraft pcb gate 30 mil, r = 2.56 ds0928 ds electronics pcb drain 30 mil, r = 2.56 ds0978 ds electronics r1, r2 24 ? , 1/8 w chip resistors dale vishay figure 1. 880 mhz test circuit component layout rev 3 mrf9210 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
4 rf device data freescale semiconductor MRF9210R3 typical characteristics figure 2. class ab broadband circuit performance figure 3. power gain versus output power figure 4. intermodulation distortion versus output power figure 5. intermodulation distortion products versus output power figure 6. power gain and efficiency versus output power
MRF9210R3 5 rf device data freescale semiconductor typical characteristics figure 7. power gain, efficiency and imd versus output power figure 8. n ? cdma performance output power versus gain, acpr, efficiency figure 9. single ? carrier maximum n ? cdma linear output power versus drain voltage figure 10. typical n ? cdma spectrum
6 rf device data freescale semiconductor MRF9210R3 f mhz z source ? z load ? 865 880 895 4.19 ? j6.71 3.17 ? j5.85 3.69 ? j6.18 8.43 ? j3.83 8.12 ? j3.85 7.84 ? j4.08 figure 11. series equivalent source and load impedance ? z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration.
MRF9210R3 7 rf device data freescale semiconductor package dimensions case 375g ? 04 issue e ni ? 860c3
d q g l k 2x h e f c 4x b a t ! " # $$$ b (flange) 4x r (lid) s (insulator) j n (lid) m (insulator) a 4
8 rf device data freescale semiconductor MRF9210R3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005. all rights reserved. how to reach us: home page: www.freescale.com e ? mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 ? 800 ? 521 ? 6274 or +1 ? 480 ? 768 ? 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 ? 8 ? 1, shimo ? meguro, meguro ? ku, tokyo 153 ? 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 ? 800 ? 441 ? 2447 or 303 ? 675 ? 2140 fax: 303 ? 675 ? 2150 ldcforfreescalesemiconductor@hibbertgroup.com mrf9210 rev. 2, 1/2005 document number:
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