SIGC68T170R3 edited by infineon technologies ai p s dd hv3, l 7761 - a , edition 2 , 04.09.03 igbt 3 chip this chip is used for: power module features: 1700v trench + field stop technology low turn - off losses short tail current positive temperature coefficient easy paralleling applications: drives g c e chip type v ce i cn die size package orde ring code SIGC68T170R3 1700v 50a 8.23 x 8.25 mm 2 sawn on foil q67050 - a4147 - a001 mechanical parameter: raster size 8.23 x 8.25 emitter pad size 4 x ( 2.94 x 2.97 ) gate pad size 1.18 x 1.09 mm area total / active 67.9 / 49.9 mm 2 thickness 190 m wafer size 150 mm flat position 90 grd max.possible chips per wafer 204 pcs passivation frontside photoimide emitter metalization 3200 nm alsicu collector metalization 1400 nm ni ag ? system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, <500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
SIGC68T170R3 edited by infineon technologies ai p s dd hv3, l 7761 - a , edition 2 , 04.09.03 maximum ratings : parameter symbol value unit collector - emitter voltage , t j =25 c v ce 1700 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 150 a gate emitter voltage v ge 20 v operating junction and s torage temperature t j , t stg - 55 ... +150 c 1 ) depending on thermal properties of assembly static characteristics (tested on chip) , t j =25 c, unless otherwise specified: value parameter symbol conditions min. typ. max. unit c ollector - emitter breakdown voltage v (br)ces v ge =0v , i c = 2.5ma 1700 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =50a 1.6 2 2.4 gate - emitter threshold voltage v ge(th) i c =2ma , v ge =v ce 5.2 5.8 6.4 v zero gate voltage collector current i ce s v ce =1700v , v ge =0v 400 a gate - emitter leakage current i ges v ce =0v , v ge =2 0v 600 na integrated gate resistor r gint 9.5 w electrical characteristics (tested at component): value parameter symbol conditions min. typ. max. unit input capaci tance c iss 4408 output capacitance c oss 183 reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz 146 pf switching characteristics (tested at component), inductive load value parameter symbol conditions 1) min. typ. max. unit turn - on delay time t d(on) tbd rise time t r tbd turn - off delay time t d(off) tbd fall time t f t j =125 c v cc =1200v, i c =50a, v ge = - 15/15v, r g = -- w tbd s 1) values also influenced by parasitic l - and c - in measurement and package.
SIGC68T170R3 edited by infineon technologies ai p s dd hv3, l 7761 - a , edition 2 , 04.09.03 chip drawing:
SIGC68T170R3 edited by infineon technologies ai p s dd hv3, l 7761 - a , edition 2 , 04.09.03 further electrical characteristics: this chip data sheet refers to the device data sheet tbd description: aql 0,65 for visual inspection accordi ng to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag , bereich kommunikation st. - martin - strasse 53, d - 81541 mnchen ? infineon technologies ag 2002 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all war ranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for in formation on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of su ch components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to su pport and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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