regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
feb.1999 FK10UM-9 v dss ................................................................................ 450v r ds (on) (max) .............................................................. 0.92 w i d ......................................................................................... 10a integrated fast recovery diode (max.) ........150ns 450 30 10 30 10 30 125 C55 ~ +150 C55 ~ +150 2.0 v v a a a a w c c g v dss v gss i d i dm i s i sm p d t ch t stg drain-source voltage gate-source voltage drain current drain current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature weight v gs = 0v v ds = 0v typical value maximum ratings (tc = 25 c) outline drawing dimensions in mm to-220 mitsubishi nch power mosfet FK10UM-9 high-speed switching use application servo motor drive, robot, ups, inverter fluorecent lamp, etc. parameter conditions symbol ratings unit 10.5max. 4.5 1.3 f 3.6 3.2 16 12.5min. 3.8max. 1.0 0.8 2.54 2.54 4.5max. 0.5 2.6 7.0 qwe q gate w drain e source r drain r wr q e
feb.1999 3 0.70 3.50 5.5 1100 130 20 20 30 95 35 1.5 10 1 4 0.92 4.60 2.0 1.0 150 v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) t rr i d = 1ma, v gs = 0v i g = 100 m a, v ds = 0v v gs = 25v, v ds = 0v v ds = 450v, v gs = 0v i d = 1ma, v ds = 10v i d = 5a, v gs = 10v i d = 5a, v gs = 10v i d = 5a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 200v, i d = 5a, v gs = 10v, r gen = r gs = 50 w i s = 5a, v gs = 0v channel to case i s = 10a, d is /d t = C100a/ m s mitsubishi nch power mosfet FK10UM-9 high-speed switching use v v m a ma v w v s pf pf pf ns ns ns ns v c/w ns 450 30 2 3.3 200 160 120 80 40 0 200150100500 5 3 2 10 1 7 5 3 2 10 0 7 5 7 5 3 2 10 ? 23 5710 1 10 0 23 5710 2 23 5710 3 t c = 25? single pulse tw=10? 100? 1ms 10ms dc power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max. performance curves
feb.1999 mitsubishi nch power mosfet FK10UM-9 high-speed switching use 40 32 24 16 8 0 0 4 8 12 16 20 i d = 15a t c = 25? pulse test 10a 5a 10 1 7 5 3 2 10 ? 10 ? 23 5710 0 10 0 7 5 3 2 23 5710 1 t c =25? v ds = 10v pulse test 125? 75? 20 16 12 8 4 0 0 1020304050 p d = 125w t c = 25? pulse test 6v 5v 4v v gs = 20v 10v 7v 10 8 6 4 2 0 0 4 8 12 16 20 p d = 125w t c = 25? pulse test v gs =20v 10v 6v 4v 5v 0 23 10 ? 5710 0 23 5710 1 23 5710 2 2.0 1.6 1.2 0.8 0.4 t c = 25? pulse test v gs = 10v 20v 20 16 12 8 4 0 0 4 8 12 16 20 t c = 25? v ds = 50v pulse test output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) ( w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s)
feb.1999 mitsubishi nch power mosfet FK10UM-9 high-speed switching use 5.0 4.0 3.0 2.0 1.0 0 ?0 0 5 0 100 150 v ds = 10v i d = 1ma 20 16 12 8 4 0 0 20406080100 v ds = 100v 400v 200v tch = 25? i d = 10a 23 5710 0 10 3 7 5 3 2 10 2 7 5 23 5710 1 10 ? 10 1 3 2 tch = 25? v dd = 200v v gs = 10v r gen = r gs = 50 w t f t d(off) t r t d(on) 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 2 23 5710 1 23 5710 0 23 7 5 ciss tch = 25? f = 1mhz v gs = 0v coss crss 10 0 7 5 3 2 10 ? 0 10 1 7 5 3 2 50 100 150 200 250 v gs = 10v i d = 1/2i d pulse test switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch (?) drain-source on-state resistance r ds (on) (t?) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25?) channel temperature tch (?) 40 32 24 16 8 0 0 0.8 1.6 2.4 3.2 4.0 t c =125? 75? 25? v gs = 0v pulse test
feb.1999 mitsubishi nch power mosfet FK10UM-9 high-speed switching use 5 3 2 10 1 23 5710 2 10 2 7 5 3 2 23 5710 3 10 1 3 2 10 1 7 5 5 7 5 7 5 3 2 10 0 i s = 10a v gs = 0v v dd = 250v i rr t rr t ch = 25? t ch = 150? 1.4 1.2 1.0 0.8 0.6 0.4 ?0 0 5 0 100 150 v gs = 0v i d = 1ma 10 ? 10 1 7 5 3 2 10 0 7 5 3 2 10 ? 7 5 3 2 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? 10 ? p dm tw d= t tw t d=1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 10 1 10 2 7 5 3 2 10 1 7 5 3 2 10 0 d is/ d t = ?00a / m s v gs = 0v v dd = 250v i rr t rr t ch = 25? t ch = 150? channel temperature tch (?) breakdown voltage vs. channel temperature (typical) drain-source breakdown voltage v (br) dss (t?) drain-source breakdown voltage v (br) dss (25?) reverse recovery time t rr (ns) reverse recovery current i rr (a) reverse recovery current i rr (a) source current i s (a) diode reverse vs. source current characteristic (typical) reverse recovery time t rr (ns) source current d is /d t (?/ m s) diode reverse vs. source current d is /d t characteristic (typical) transient thermal impedance characteristics pulse width t w (s) transient thermal impedance z th (ch?) (?/ w)
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