esm1600b january 1997 quad comparator interface circuit . minimum hysteresis voltage at each input : 0.3v . output current : 15 ma . large supply voltage range : + 10v to + 35v . internal thermal protection . input and output clamping protec- tion diodes. description the esm1600b is a quadruple comparator intented to provide an interface between signal processing and transmitting lines in very noisy industrial sur- roundings. output of each comparator, used as line driver, sup- plies a constant current (pnp output stage) and is specially well protected against powerful overvol- tages. the open collector output circuit allows the connection of several comparators to a single trans- mitting line. the esm1600b can operate as receiver on a line transmitting noisy high-voltage signals. hysteresis effect, internally implemented on inputs of each comparator provides an excellent noise immunity. in addition, each input is also protected against overvoltages. the esm1600b can operate in a wide supply vol- tage range (standard operational amplifier 15 v supply or single + 12 v or + 24 v supplies used in industrial electronic sets). moreover, internal thermal protection circuitry cuts out the output current of the four comparators when power dissipation becomes excessive. dip14 so16 dip14 so16 1 - inverting input 1 2 - non-inverting input 1 3 - output 1 4 - non-inverting input 2 5 - inverting input 2 6 - output 2 7-gnd 8 - output 3 9 - inverting input 3 10 - non-inverting input 3 11 - output 4 12 - non-inverting input 4 13 - inverting input 4 14 - v cc 1 - inverting input 1 2 -non-inverting input 1 3-output 1 4 - non-inverting input 2 5 - inverting input 2 6-output 2 7-gnd 8 - n.c. 9 - n.c. 10 - output 3 11 - inverting input 3 12 - non-inverting input 3 13 - output 4 14 - non-inverting input 4 15 - inverting input 4 16 - v cc order ing numbers: esm1600b (dip14) ESM1600BFP (so16) pin connections (top view) 1/10
schematic diagram absolute maximum ratings symbol parameter value unit v cc supply voltage 45 v v id differential input voltage 45 v v i input voltage C0.7 to +45 v i o (max) output current internally limited ma p tot power dissipation internally limited w t op operating ambient temperature range C25 to +85 o c t stg storage temperature range C40 to +150 o c esm1600b 2/10
electrical characteristics v cc = +35v, -25 o c t amb +85 o c (unless otherwise specified) symbol parameter min. typ. max. typ. fig. v i + v i C input voltage range - note 1 non-inverting input inverting input 0 2 33 33 v v c input control voltage (2v < v cm < 33v) - note 2 150 500 mv 1 i ib input bias current - note 3 1 5 m a i sc short-circuit output current v cc = +10 to +35 v 6 25 ma 2 v cc Cv o output saturation voltage (high level) - (i o = C10ma) 1 1.5 v 3 i ol i oh output off-state current (v i + = 2v, v i C = 33v) 1 5 m a 4 i cc supply current r l = for the 4 comparators r l common for the 4 comparators 3 9 5 12 ma 5 s vo output slew-rate (r l = 3k w , t amb = +25 o c) 1 v/ m s v f input protective diode forward voltage (i = 20ma, t amb = +25 o c) 1.5 v C energy of pulses against which circuit output is protected (t amb = +25 o c) - note 4 20 mj C pulsed current applied to protective output diodes (t amb = +25 o c) - note 5 0.4 a6 notes : 1. when negative input is biased between 0 and 2 volts output is always low. 2. comparator hysteresis voltage on positive input on the one hand and negative input on the other hand equals sum of input cont rol voltages v c1 + v c2 or v c3 + v c4. 3. input current flows out of the circuit owing to pnp input stage. this current is constant and independent of output level. so no load change is transmitted to inputs. 4. by definition, a circuit is immunized against powerful signals when no durable characteristic change occurs after the applica tion of these signals and when the circuit has not been destroyed. in industrial surroundings, parasitic signals contain usually high voltage (over 200 v) ac harmonics having variable impedance of 500 w to 10k w . the power dissipation of these signals is divided between clamping diodes and the v cc . simulation is used to determine the maximum energy level. the injected current value cannot in any case exceed 3a. 5. output protective diodes are tested individually by means of positive and negative discharge voltages of a capacitor. the neg ative discharge control occurs through a single diode. during positive discharge, due to the properties of integration, a grounded co llector pnp transistor appears in parallel with the clamping diode connected to v cc . a part of the current flows through this transistor, v ce being greater than v cc . if t is the total discharge duration, energy dissipated in the circuit is : for a certain injected current, the lower the current i 2 , that is to say the lower the pnp current gain the smaller the energy is dissipated in the cir- cuit. topology and technological processes have been chosen to shorten this current gain. w = ? t [ i 1 vd + i 2 (vcc + vd) ] dt o esm1600b 3/10
esm1600b 4/10
typical applications figure 5 : conversion of dtl, ttl, mos signals on a transmitting line. figure 6 : reception of highly noisy signals. esm1600b 5/10
test circuit figure 8. figure 9. figure 7. figure 10. esm1600b 6/10
figure 11. figure 12. figure 13 : response time. esm1600b 7/10
dip14 package mechanical data dimensions millimeters inches min. typ. max. min. typ. max. a1 0.51 0.020 b 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 d 20 0.787 e 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 f 7.1 0.280 i 5.1 0.201 l 3.3 0.130 z 1.27 2.54 0.050 0.100 dip14.tbl esm1600b 8/10
s016 package mechanical data dimensions millimeters inches min. typ. max. min. typ. max. a 1.75 0.069 a1 0.1 0.2 0.004 0.008 a2 1.6 0.063 b 0.35 0.46 0.014 0.018 b1 0.19 0.25 0.007 0.010 c 0.5 0.020 c1 45 o (typ.) d 9.8 10 0.386 0.394 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 8.89 0.350 f 3.8 4.0 0.150 0.157 g 4.6 5.3 0.181 0.209 l 0.5 1.27 0.020 0.050 m 0.62 0.024 s8 o (max.) so16.tbl esm1600b 9/10
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may resu lt from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. speci fication mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information pr eviously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or sy stems without express written approval of sgs-thomson microelectronics. ? 1997 sgs-thomson microelectronics C printed in italy C all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. esm1600b 10/10
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