symbol v ds v gs i dm i av e av t j , t stg symbol typ max 23 40 48 65 r jl 12 16 maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w c/w absolute maximum ratings t a =25c unless otherwise noted v v 12 pulsed drain current b power dissipation t a =25c gate-source voltage drain-source voltage a maximum junction-to-ambient a steady-state 11.5 9.6 80 avalanche current b,e 25 repetitive avalanche energy b,e l=0.1mh 78 i d continuous drain current a maximum units parameter t a =25c t a =70c 30 mj w junction and storage temperature range a p d c 3 2.1 -55 to 150 t a =70c AO4406 n-channel enhancement mode field effect transistor march 2002 features v ds (v) = 30v i d = 11.5a r ds(on) < 14m ? (v gs = 10v) r ds(on) < 16.5m ? (v gs = 4.5v) r ds(on) < 26m ? (v gs = 2.5v) general description the AO4406 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device makes an excellent high side switch for notebook cpu core dc-dc conversion. soic-8 g s s s d d d d g d s alpha & omega semiconductor, ltd.
AO4406 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 0.8 1 1.5 v i d(on) 60 a 11.5 14 t j =125c 16 19.2 13.5 16.5 m ? ? ? q g 18 nc q gs 2.5 nc q gd 5.5 nc t d(on) 4ns t r 5ns t d(off) 32 ns t f 5ns t rr 18,7 ns q rr 19.8 nc body diode reverse recovery time body diode reverse recovery charge i f =10a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =12a reverse transfer capacitance i f =10a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =4.5v, i d =10a i s =10a,v gs =0v v ds =5v, i d =10a v gs =2.5v, i d =8a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.2 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =15v, i d =11.5a gate source charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =15v, f=1mhz gate drain charge a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. alpha & omega semiconductor, ltd.
AO4406 typical electrical and thermal characteristics 0 10 20 30 40 50 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2v 2.5v 3v 4.5v 10v 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 0 5 10 15 20 25 30 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v v gs =10v v gs =4.5v 0 10 20 30 40 0.00 2.00 4.00 6.00 8.00 10.00 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v v gs =10v i d =10a 25c 125c i d =10a v gs =0v alpha and omega semiconductor, ltd.
AO4406 typical electrical and thermal characteristics 0 1 2 3 4 5 0 4 8 12162024 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z t ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 p s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =11.5a single pulse d=t on /t t j,pk =t a +p dm .z t ja .r t ja r t ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c alpha & omega semiconductor, ltd.
AO4406 typical electrical and thermal characteristics 0 10 20 30 40 50 60 70 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: avalanche capability i d (a), peak avalanche current 0 1 2 3 4 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note a) power dissipation (w) steady- state 10s t a =25c dd d a v bv i l t ? ? = alpha & omega semiconductor, ltd.
q e q h l aaa b e1 c e d a a2 a1 symbols 0.050 bsc 0.50 1.27 8 0.10 0.10 5.00 6.20 4.00 0.51 0.25 --- 1.55 --- 5.80 0 0.25 0.40 --- --- --- --- --- 1.27 bsc 0.19 3.80 4.80 1.45 0.33 --- 0.00 --- --- --- --- 1.50 1.45 --- --- 0.228 0.010 0.016 --- 0 --- --- --- --- 0.057 0.007 0.013 --- 0.150 0.189 0.000 --- --- --- --- 0.059 0.057 --- 0.244 8 0.020 0.050 0.004 0.010 0.157 0.197 0.061 0.020 --- 0.004 dimensions in inches dimensions in millimeters max min nom min nom max so-8 package data note: 1. lead finish: 150 microinches ( 3.8 um) min. thickness of tin/lead (solder) plated on lead 2. tolerance 0.10 mm (4 mil) unless otherwise specified 3. coplanarity : 0.10 mm 4. dimension l is measured in gage plane recommended land pattern package marking description note: logo - aos logo 4406 - part number code. f - fab location a - assembly location y - year code w - week code. l n - assembly lot code so-8 part no. code unit: mm alpha & omega semiconductor, inc. rev. a AO4406 part no. code 4406
so-8 tape and reel data so-8 carrier tape so-8 reel so-8 tape leader / trailer & orientation alpha & omega semiconductor, inc.
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