c-125 revision 1 IRGPC50FD2 insulated gate bipolar transistor with ultrafast soft recovery diode
c-126 parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 110 170 i c = 39a q ge gate - emitter charge (turn-on) ? 20 30 nc v cc = 400v q gc gate - collector charge (turn-on) ? 50 75 see fig. 8 t d(on) turn-on delay time ? 70 ? t j = 25c t r rise time ? 110 ? ns i c = 39a, v cc = 480v t d(off) turn-off delay time ? 400 600 v ge = 15v, r g = 5.0 w t f fall time ? 290 400 energy losses include "tail" and e on turn-on switching loss ? 2.5 ? diode reverse recovery. e off turn-off switching loss ? 6.0 ? mj see fig. 9, 10, 11, 18 e ts total switching loss ? 8.5 13 t d(on) turn-on delay time ? 68 ? t j = 150c, see fig. 9, 10, 11, 18 t r rise time ? 100 ? ns i c = 39a, v cc = 480v t d(off) turn-off delay time ? 760 ? v ge = 15v, r g = 5.0 w t f fall time ? 520 ? energy losses include "tail" and e ts total switching loss ? 14 ? mj diode reverse recovery. l e internal emitter inductance ? 13 ? nh measured 5mm from package c ies input capacitance ? 3000 ? v ge = 0v c oes output capacitance ? 340 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 40 ? ? = 1.0mhz t rr diode reverse recovery time ? 50 75 ns t j = 25c see fig. ? 105 160 t j = 125c 14 i f = 25a i rr diode peak reverse recovery current ? 4.5 10 a t j = 25c see fig. ? 8.0 15 t j = 125c 15 v r = 200v q rr diode reverse recovery charge ? 112 375 nc t j = 25c see fig. ? 420 1200 t j = 125c 16 di/dt = 200a/s di (rec)m /dt diode peak rate of fall of recovery ? 250 ? a/s t j = 25c see fig. during t b ? 160 ? t j = 125c 17 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 250a d v (br)ces / d t j temp. coeff. of breakdown voltage ? 0.62 ? v/c v ge = 0v , i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ? 1.6 1.7 i c = 39a v ge = 15v ? 2.0 ? v i c = 70a see fig. 2, 5 ? 1.7 ? i c = 39a, t j = 150c v ge(th) gate threshold voltage 3.0 ? 5.5 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage ? -14 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 21 24 ? s v ce = 100v, i c = 39a i ces zero gate voltage collector current ? ? 250 a v ge = 0v, v ce = 600v ? ? 6500 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ? 1.3 1.7 v i c = 25a see fig. 13 ? 1.2 1.5 i c = 25a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v IRGPC50FD2
c-127 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics
c-128 fig. 5 - collector-to-emitter voltage vs. case temperature fig. 4 - maximum collector current vs. case temperature IRGPC50FD2
c-129 IRGPC50FD2
c-130 fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current
c-131
c-132 v c e i e d t t 2 t 1 5 % v c e i c i p k v c c 1 0 % i c v c e t 1 t 2 d u t v o l t a g e a n d c u r r e n t g a t e v o l t a g e d . u . t . + v g 1 0 % + v g 9 0 % i c t r t d ( o n ) d i o d e r e v e r s e r e c o v e r y e n e r g y t x e o n = e r e c = t 4 t 3 v d i d d t t 4 t 3 d i o d e r e c o v e r y w a v e f o r m s i c v p k 1 0 % v c c i r r 1 0 % i r r v c c t r r q r r = t r r t x i d d t s a m e t y p e d e v i c e a s d . u . t . d . u . t . 4 3 0 f 8 0 % o f v c e fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f
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