unisonic technologies co., ltd 2sd669/a npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2012 unisonic technologies co., ltd qw-r204-005,j bipolar power general purpose transistor ? applications * low frequency power amplifier complementary pair with utc 2sb649/a sot-223 sot-89 to-92nl 1 to-92 1 1 to-251 to-252 1 to-126 1 1 1 to-126c 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2SD669XL-X-AA3-R 2sd669xg-x-aa3-r sot-223 b c e tape reel 2sd669xl-x-ab3-r 2sd669xg-x-ab3-r sot-89 b c e tape reel 2sd669xl-x-t60-k 2sd669xg-x-t60-k to-126 e c b bulk 2sd669xl-x-t6c-k 2sd669xg-x-t6c-k to-126c e c b bulk 2sd669xl-x-t92-b 2sd669xg-x-t92-b to-92 e c b tape box 2sd669xl-x-t92-k 2sd669xg-x-t92-k to-92 e c b bulk 2sd669xl-x-t92-r 2sd669xg-x-t92-r to-92 e c b tape reel 2sd669xl-x-t9n-b 2sd669xg-x-t9n-b to-92nl e c b tape box 2sd669xl-x-t9n-k 2sd669xg-x-t9n-k to-92nl e c b bulk 2sd669xl-x-tm3-t 2sd669xg-x-tm3-t to-251 b c e tube 2sd669xl-x-tn3-r 2sd669xg-x-tn3-r to-252 b c e tape reel 2sd669xl-x-tn3-t 2sd669xg-x-tn3-t to-252 b c e tube (1) b: tape box, k: bulk, r: tape reel (2) aa3: sot-223, ab3: sot-89, t60: to-126, (2) t6c: to-126c, tm3: to-251, tn3: to-252, (2) t92: to-92, t9n: to-92nl (3) x: refer to classification of h fe1 (4) g: halogen free, l: lead free (5) a: 160v, blank: 120v 2sd669xl -x -ab3 -r (1)packing type (2)package type (3)rank (4)lead plating (5) collector-emitter voltage
2sd669/a npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r204-005,j ? absolute maximum rating ( ta= 25c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 180 v collector-emitter voltage 2sd669 v ceo 120 v 2sd669a 160 emitter-base voltage v ebo 5 v collector current i c 1.5 a collector peak current l c(peak) 3 a power dissipation sot-223/ sot-89 p d 0.5 w to-126 1.3 w to-126c 1 w to-92/to-92nl 0.6 w to-251 1 w to-252 2 w junction temperature t j 150 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? hermal data parameter symbol ratings unit junction to case sot-89 jc 38 c/w sot-223 14 to-92/ to-92nl 80 to-126 6.25 to-126c 10 to-251/ to-252 4.5 ? electrical characteristics (ta=25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector to base breakdown voltage bv cbo i c =1ma, i e =0 180 v collector to emitter breakdown voltage 2sd669 bv ceo i c =10ma, r be = 120 v 2sd669a 160 emitter to base br eakdown voltage bv ebo i e =1ma, i c =0 5 v collector cut-off current i cbo v cb =160v, i e =0 10 a dc current gain h fe1 v ce =5v, i c =150ma (note) 60 320 h fe2 v ce =5v, i c =500ma (note) 30 collector-emitter satu ration voltage v ce(sat) i c =600ma, i b =50ma (note) 1 v base-emitter voltage v be v ce =5v, i c =150ma (note) 1.5 v current gain bandwidth product f t v ce =5v, i c =150ma (note) 140 mhz output capacitance c ob v cb =10v, i e =0, f=1mhz 14 pf note: pulse test. ? classification of h fe1 rank b c d range 60-120 100-200 160-320
2sd669/a npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r204-005,j ? typical characteristics t a = 7 5 c 2 5 - 2 0 v ce =5v 1 50 10 0 15 0 20 0 25 0 30 0 1 3 10 30 100 300 1000 3000 collector current, i c (ma) dc current transfer ratio, h fe dc current transfer ratio vs. collector current collector to emitter saturation voltage vs. collector current 1 3 10 30 100 300 1000 collector current, i c (ma) 0 0.2 0.4 0.6 0.8 1.0 1.2 collector to emitter saturation voltage, v ce(sat) (v) t c = 7 5 c i c =10 i b 25 - 2 0 t c = - 2 0 c i c =10i b 2 5 7 5 1 3 10 30 100 300 1,000 0 0.2 0.4 0.6 0.8 1.0 1.2 collector current, i c (ma) base to emitter saturation voltage vs. collector current base to emitter saturation voltage, v be(sat) (v) 10 30 100 300 1,000 collector current, i c (ma) 0 40 80 120 160 200 240 gain bandwidth product, f t (mhz) gain bandwidth product vs. collector current v ce =5v t a =25c 1 510 50 20 100 2 2 5 10 20 50 100 200 collector to base voltage, v cb (v) collector output capacitance vs. collector to base voltage collector output capacitance, c ob (pf) f=1mhz i e =0 dc operation (t c =25c) (13.3v, 1.5a) 40v, 0.5a (120v, 0.04a) (160v, 0.02a) 2sd669 2sd669a area of safe operation collector to emitter voltage, v ce (v) 1310 100 300 0.01 0.03 0.1 0.3 1.0 3 30 collector current, i c (a)
2sd669/a npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r204-005,j ? typical characteristics(cont.) base to emitter voltage, v be (v) 0 0.2 0.4 0.6 0.8 1.0 1 2 5 10 20 50 100 200 500 v ce =5v typical transfer characteristics utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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