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| !"#$%& ! ! " # $ ! % &' ( ( & ) ( *' & +, - " ./ ,'0 & 12 " % 3 4* 56 +, - + ./ ,'0 7 ' ! 6 ' 0 $1 !! * "# $ # # ! +, ( ( + - + 1 *0 5 %) ( - + 14*0 5 %)4 &' - & ( & 1)(0 5 %8 * # $ 1!./0 ( & 1!( 8 + $ $ %!8 & $ $ %!4 9: $ $ 3 " % 3 % 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.1 1 10 M2FH3 tc=125c [max] tc=125c [typ] tc= 25c [max] tc= 25c [typ] 50 20 5 2 0.5 0.2 forward voltage forward current i f [a] forward voltage v f [v] pulse measurement per diode 0 0.5 1 1.5 2 2.5 3 3.5 4 0246810 dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 M2FH3 tj = 125c 0 t p i o t d=t p /t forward power dissipation forward power dissipation p f [w] average rectified forward current i o [a] 0 20 40 60 80 100 120 140 160 1 10 100 2 5 20 50 M2FH3 i fsm 10ms 10ms 1 cycle non-repetitive, sine wave, tj=25c before surge current is applied peak surge forward capability number of cycles [cycle] peak surge forward current i fsm [a] 0 5 10 15 20 25 30 35 40 0.1 1 10 100 1000 M2FH3 tc=50c [typ] tc=75c [typ] tc=100c [typ] tc=125c [typ] reverse current reverse current i r [ma] reverse voltage v r [v] pulse measurement per diode 0 5 10 15 20 0 5 10 15 20 25 30 35 dc d=0.05 0.1 0.2 0.3 0.5 sin 0.8 M2FH3 0 t p v r t d=t p /t tj = 125c reverse power dissipation reverse power dissipation p r [w] reverse voltage v r [v] 10 100 1000 0.1 1 10 f=1mhz tl=25c typ M2FH3 0.2 0.5 25 20 30 2000 500 200 50 20 junction capacitance junction capacitance cj [pf] reverse voltage v r [v] 0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 M2FH3 v r = 15v 0 t p i o t d=t p /t 0 v r derating curve average rectified forward current i o [a] case temperature tc [c] 0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 M2FH3 v r = 15v 0 t p i o t d=t p /t 0 v r derating curve average rectified forward current i o [a] lead temperature tl [c] 0 20 40 60 80 100 120 140 1 10 100 1000 M2FH3 conductor pattern area [mm 2 ] [ c/w] conductor pattern area ja - ja |
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