features silicon epitaxial planar diode high speed switching diode 500 mw power dissipation weight: 0.004 ounces, 0.13 grams maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. maximum ratings units reverse voltage v r v peak reverse voltage v rm v average forw ard rectified current half w a v e re ct ificat i on w ith re sist.load @ t a = 25 and f 50hz forward surge current @ t<1s and t j = 25 i fsm a pow er dissipation @ t a = 25 p tot mw junction temperature t j storage temperature range t stg electrical characteristics units forw ard voltage at i f =10ma v f v leakage current @ v r =30v i r a capacitance @ v f =v r =1v,f=1mhz c j pf reverse recovery time from i f =ir=10ma to i rr =1ma 1S2076A 0.1 ns 1S2076A mechanical data small signal switching diode cas e: do-35, glas s cas e reverse voltage : 60 v current: 0.15 a polarity: color band denotes cathode i av 1.0 250 1) ma - -0.8 - 60 70 150 175 -55 --- +175 1)valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. min typ max - 3.0 8.0 semiconductor t rr - - - - ki ki semiconductor document number 0268032 1. do-35(glass)
t j =100 t j =25 -1 10 1 10 10 2 4 10 ma i f v f 3 10 0 1 2v 10s 1 1 10 100 v=tp/t 0.1 a -1 10 i fsm tp -2 10 -3 10 -5 10 n=0 0.1 0.2 0.5 t=1/fp tp i fsm t fig.1 -- admissible power dissipation nnnnnn versus ambient temperature fig.2 -- forward characteristics ratings and characteristic curv es 1S2076A fig.3 -- admissible repetitive peak forward current versus pulse duration 100 200 300 400 0 100 200 ?? 500 50 150 350 250 450 0 mw p tot t a ki semiconductor document number 0268032 2.
1.1 1.0 0.8 0.9 0.7 0 2 4 6 8 10v t j =25 f=1mhz ctot(ov) v r ctot(v r ) v o 5k 2nf v rf =2v d. u. t. 60 ki semiconductor document number 0268032 3. 0 100 200?? 10 1 na 3 10 2 10 4 10 v r =20v 10 ma r f 2 10 3 10 4 10 1 -2 10 -1 10 1 1 0 2 10 i f t j =25 ?? f=1khz ratings a nd characteristic curves 1S2076A fig. 6 -- leakage current versus juncti on temperature ff fi g. 7 -- dynami c forward resi stance fff versus forward current fi g. 4 -- recti fi cati on effi ci ency jjjjjjjj measurement circui t fi g. 5 -- relati ve capaci tance versus jjjjjjjjjjjjjj voltage
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