plastic power transistors so8 for surface mount applications ? collector emitter sustaining voltage e v ceo(sus) = 30 vdc (min) @ i c = 10 madc ? high dc current gain e h fe = 85 (min) @ i c = 0.8 adc = 60 (min) @ i c = 3.0 adc ? low collector emitter saturation voltage e v ce(sat) = 0.18 vdc (max) @ i c = 1.2 adc = 0.45 vdc (max) @ i c = 3.0 adc ? miniature so8 surface mount package saves board space ????????????????????????????????? ????????????????????????????????? maximum ratings (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? rating ?????? ?????? symbol ?????? ?????? value ????? ????? unit ??????????????????? ? ????????????????? ? ??????????????????? collectorbase voltage ?????? ? ???? ? ?????? v cb ?????? ? ???? ? ?????? 45 ????? ? ??? ? ????? vdc ??????????????????? ??????????????????? collectoremitter voltage ?????? ?????? v ceo ?????? ?????? 30 ????? ????? vdc ??????????????????? ??????????????????? emitterbase voltage ?????? ?????? v eb ?????? ?????? 6.0 ????? ????? vdc ??????????????????? ? ????????????????? ? ??????????????????? collector current e continuous collector current e peak ?????? ? ???? ? ?????? i c ?????? ? ???? ? ?????? 3.0 5.0 ????? ? ??? ? ????? adc ??????????????????? ??????????????????? base current e continuous ?????? ?????? i b ?????? ?????? 1.0 ????? ????? adc ??????????????????? ??????????????????? operating and storage junction temperature range ?????? ?????? t j , t stg ?????? ?????? 55 to +150 ????? ????? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ??????????????????? ??????????????????? characteristic ?????? ?????? symbol ?????? ?????? max ????? ????? unit ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? thermal resistance junction to ambient on 1 sq. (645 sq. mm) collector pad on fr4 board material with one die operating. thermal resistance junction to ambient on 0.012 sq. (7.6 sq. mm) collector pad on fr4 board material with one die operating. ?????? ? ???? ? ? ???? ? ?????? r q ja ?????? ? ???? ? ? ???? ? ?????? 100 185 ????? ? ??? ? ? ??? ? ????? c/w ??????????????????? ? ????????????????? ? ??????????????????? total power dissipation @ t a = 25 c mounted on 1 sq. (645 sq. mm) collector pad on fr4 board material with one die operating. derate above 25 c ?????? ? ???? ? ?????? p d ?????? ? ???? ? ?????? 1.25 10 ????? ? ??? ? ????? watts mw/ c ??????????????????? ? ????????????????? ? ??????????????????? maximum temperature for soldering ?????? ? ???? ? ?????? t l ?????? ? ???? ? ?????? 260 ????? ? ??? ? ????? c preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 april, 2001 rev. 4 1 publication order number: mmdj3n03bjt/d mmdj3n03bjt dual bipolar power transistor npn silicon 30 volts 3 amperes case 75107, style 16 (so8) on semiconductor preferred device emitter-1 1 2 3 4 8 7 6 5 top view pinout base-1 emitter-2 base-2 collector-1 collector-1 collector-2 collector-2 c b e c b e schematic
mmdj3n03bjt http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (i c = 10 madc, i b = 0 adc) ????? ? ??? ? ????? v ceo(sus) ???? ? ?? ? ???? 30 ??? ? ? ? ??? e ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? emitterbase voltage (i e = 50 adc, i c = 0 adc) ????? ? ??? ? ????? v ebo ???? ? ?? ? ???? 6.0 ??? ? ? ? ??? e ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v ce = 25 vdc, r be = 200 ) (v ce = 25 vdc, r be = 200 , t j = 125 c) ????? ? ??? ? ????? i cer ???? ? ?? ? ???? e e ??? ? ? ? ??? e e ???? ? ?? ? ???? 20 200 ??? ? ? ? ??? m adc ??????????????????? ? ????????????????? ? ??????????????????? emitter cutoff current (v be = 5.0 vdc) ????? ? ??? ? ????? i ebo ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 10 ??? ? ? ? ??? adc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage (i c = 0.8 adc, i b = 20 madc) (i c = 1.2 adc, i b = 20 madc) (i c = 3.0 adc, i b = 0.3 adc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? 0.105 e e ???? ? ?? ? ? ?? ? ???? 0.15 0.18 0.45 ??? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? baseemitter saturation voltage (i c = 3.0 adc, i b = 0.3 adc) ????? ? ??? ? ????? v be(sat) ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 1.25 ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? baseemitter on voltage (i c = 1.2 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? v be(on) ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 1.10 ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? dc current gain (i c = 0.8 adc, v ce = 1.0 vdc) (i c = 1.2 adc, v ce = 1.0 vdc) (i c = 3.0 adc, v ce = 1.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ???? ? ?? ? ? ?? ? ???? 85 80 60 ??? ? ? ? ? ? ? ??? 195 e e ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? e ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????? ? ????????????????? ? ??????????????????? output capacitance (v cb = 10 vdc, i e = 0 adc, f = 1.0 mhz) ????? ? ??? ? ????? c ob ???? ? ?? ? ???? e ??? ? ? ? ??? 85 ???? ? ?? ? ???? 135 ??? ? ? ? ??? pf ??????????????????? ??????????????????? input capacitance (v eb = 8.0 vdc) ????? ????? c ib ???? ???? e ??? ??? 200 ???? ???? e ??? ??? pf ??????????????????? ? ????????????????? ? ??????????????????? currentgain e bandwidth product (2) (i c = 500 madc, v ce = 10 vdc, f test = 1.0 mhz) ????? ? ??? ? ????? f t ???? ? ?? ? ???? e ??? ? ? ? ??? 72 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz (1) pulse test: pulse width 300 m s, duty cycle 2%. (2) f t = |h fe | f test
mmdj3n03bjt http://onsemi.com 3 figure 1. collector saturation region figure 2. collector saturation region figure 3. dc current gain figure 4. dc current gain 100 1000 1.0 i b , base current (ma) 1.00 0.50 0.25 i b , base current (ma) 10 0.1 i c , collector current (a) 1000 100 10 v ce(sat) , collector-emitter voltage (v) h 0 10 1.0 , dc current gain fe 0.25 a 0.75 0.5 a 0.8 a 1.2 a i c = 3.0 a 100 1000 1.0 0.25 0.10 0.05 v ce(sat) , collector-emitter voltage (v) 0 10 0.25 a 0.15 0.5 a 0.8 a i c = 1.2 a 0.20 150 c 25 c -55 c 10 0.1 i c , collector current (a) 1000 100 10 h 1.0 , dc current gain fe 150 c 25 c -55 c figure 5. aono voltages figure 6. aono voltages 10 0.1 i c , collector current (a) 10 0.1 0.01 1.0 v, voltage (v) 10 0.1 i c , collector current (a) 1.0 0.1 0.01 1.0 v, voltage (v) 1.0 i c /i b = 10 v be(sat) v ce(sat) i c /i b = 50 v be(sat) v ce(sat) v ce = 4.0 v v ce = 1.0 v
mmdj3n03bjt http://onsemi.com 4 100 ms figure 7. v be(on) voltage figure 8. capacitance figure 9. currentgain bandwidth product figure 10. active region safe operating area 10 0.1 i c , collector current (a) 1.2 0.4 v r , reverse voltage (v) 10 0.1 i c , collector current (a) 100 10 v, voltage (v) f 0 1.0 1.0 , current-gain bandwidth product t 0.8 10 100 0.1 1000 10 c, capacitance (pf) 0 1.0 100 100 0.1 v ce , collector-emitter voltage (v) 10 0.01 0.001 i 1.0 , collector current (a) c v ce = 4.0 v 150 c 25 c -55 c c ob v ce = 10 v f test = 1.0 mhz t a = 25 c 10 1.0 0.1 bonding wire limit thermal limit (single pulse) secondary breakdown limit 5.0 ms 0.5 ms figure 11. power derating t, temperature ( c) 1 5 25 2.0 1.0 0 p 50 , power dissipation (w) d 0.5 1.5 75 100 125 t a there are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 10 is based on t j(pk) = 150 c; t c is variable depending on conditions. secondary breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 12. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
mmdj3n03bjt http://onsemi.com 5 figure 12. thermal response 0.0001 t, time (seconds) 1.0 0.01 0.0001 r 1000 0.001 0.01 0.1 1.0 10 100 0.1 0.001 , effective transient thermal (t) resistance (normalized) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse r q ja (t) = r(t) q ja q ja = 185 c/w d curves apply for power pulse train shown read time at t 1 t j(pk) - t a = p (pk) q ja (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2
mmdj3n03bjt http://onsemi.com 6 package dimensions case 75107 issue w seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. a b s d h c 0.10 (0.004) soic8 nb dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 x y g m y m 0.25 (0.010) z y m 0.25 (0.010) z s x s m style 16: pin 1. emitter, die #1 2. base, die #1 3. emitter, die #2 4. base, die #2 5. collector, die #2 6. collector, die #2 7. collector, die #1 8. collector, die #1
mmdj3n03bjt http://onsemi.com 7 notes
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