sot-23 1. base 2. emitter 3. collector sot-23 plastic-encapsulate transistors transistor (pnp) features z z collector current: i c =0.5a marking : 2ty maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -25 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.5 a p c collector power dissipation 0.3 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c = -100 a, i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -25 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb = -40v, i e =0 -0.1 a collector cut-off current i ceo v ce = -20v, i b =0 -0.1 a emitter cut-off current i ebo v eb = -3v, i c =0 -0.1 a h fe(1) v ce = -1v, i c = -50ma 120 400 dc current gain h fe(2) v ce = -1v, i c = -500ma 50 collector-emitter saturation voltage v ce (sat) i c =-500ma, i b = -50ma -0.6 v base-emitter saturation voltage v be (sat) i c =-500ma, i b = -50ma -1.2 v transition frequency f t v ce = -6v, i c = -20ma f= 30mhz 150 mhz classification of h fe(1) rank l h range 120-200 200-350 8550slt 1 2012- 0 willas electronic corp.
-0 -2 -4 -6 -8 -10 -12 -0 -300 -600 -900 -1200 -1 -10 -100 -1 -10 -100 10 100 -0.1 -1 -10 1 10 0 25 50 75 100 125 150 0 100 200 300 400 -1 -10 -100 -400 -800 -1200 -1 -10 -100 -10 -100 -1 -10 -100 10 100 -90 -80 -70 -60 -50 -40 -30 -20 -10 common emitter t a =25 -400ua -360ua -320ua -280ua -240ua -200ua -160ua -120ua collector-emitter voltage v ce (v) collector current i c (ma) i c v ce i b =-40ua -80ua -0 -500 v be i c t a = 2 5 t a = 1 0 0 common emitter v ce =-1v collector current i c (ma) base-emmiter voltage v be (mv) i c common emitter v ce =-6v t a =25 transition frequency f t (mhz) collector current i c (ma) 400 -20 v cb /v eb c ob /c ib reverse voltage v (v) capacitance c (pf) c ib c ob f=1mhz i e =0/i c =0 t a =25 50 p c t a collector power dissipation p c (mw) ambient temperature t a ( ) f t -500 t a =1 0 0 t a =2 5 =10 i c v besat base-emitter saturation voltage v besat (mv) collector current i c (ma) -500 typical characteristics -500 =10 t a = 2 5 t a = 1 0 0 i c v cesat collector-emitter saturation voltage v cesat (v) collector current i c (ma) common emitter v ce =-1v dc current gain h fe collector current i c (ma) t a =25 t a =100 h fe i c 500 -500 2012- 0 willas electronic corp. sot-23 plastic-encapsulate transistors 8550SLT1
outline drawing dimensions in inches and (millimeters) sot-23 rev.d .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012- 0 willas electronic corp. 2012- 0 w illas electronic corp. sot-23 plastic-encapsulate transistors 8550SLT1
|
