2N6315 2n6316 maximum ratings: (t c =25c) symbol 2n6317 2n6318 units collector-base voltage v cbo 60 80 v collector-emitter voltage v ceo 60 80 v emitter-base voltage v ebo 5.0 v continuous collector current i c 7.0 a peak collector current i cm 15 a continuous base current i b 2.0 a power dissipation p d 90 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance jc 1.95 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =rated v cbo 0.25 ma i cev v ce =rated v ceo , v be =1.5v 0.25 ma i cev v ce =rated v ceo , v be =1.5v, t c =150c 2.0 ma i ceo v ce =1/2 rated v ceo 0.50 ma i ebo v eb =5.0v 1.0 ma bv ceo i c =100ma, (2N6315, 2n6317) 60 v bv ceo i c =100ma, (2n6316, 2n6318) 80 v v ce(sat) i c =4.0a, i b =0.4a 1.0 v v ce(sat) i c =7.0a, i b =1.75a 2.0 v v be(sat) i c =7.0a, i b =1.75a 2.5 v v be(on) v ce =4.0v, i c =2.5a 1.5 v h fe v ce =4.0v, i c =0.5a 35 h fe v ce =4.0v, i c =2.5a 20 100 h fe v ce =4.0v, i c =7.0a 4.0 h fe v ce =4.0v, i c =500ma, f=1.0khz 20 f t v ce =10v, i c =250ma, f=1.0mhz 4.0 mhz 2N6315 2n6316 npn 2n6317 2n6318 pnp complementary silicon power transistors description: the central semiconductor 2N6315 series types are complementary silicon power transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. marking: full part number to-66 case r2 (6-april 2011) www.centralsemi.com
2N6315 2n6316 npn 2n6317 2n6318 pnp complementary silicon power transistors to-66 case - mechanical outline marking: full part number electrical characteristics - continued: (t c =25c unless otherwise noted) symbol test conditions max units c ob v cb =10v, i e =0, f=1.0mhz, (2N6315, 2n6316) 200 pf c ob v cb =10v, i e =0, f=1.0mhz, (2n6317, 2n6318) 300 pf t r v cc =30v, i c =2.5a i b1 =i b2 =0.25a 0.7 s t off v cc =30v, i c =2.5a i b1 =i b2 =0.25a 1.8 s www.centralsemi.com r2 (6-april 2011)
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