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  april 2009 FDP22N50N n-channel mosfet ?2009 fairchild semiconductor corporation FDP22N50N rev. a www.fairchildsemi.com 1 unifet tm FDP22N50N n-channel mosfet 500v, 22a, 0.22 ? features ?r ds(on) = 0.185 ? ( typ.)@ v gs = 10v, i d = 11a ? low gate charge ( typ. 49nc) ? low c rss ( typ. 24pf) ? fast switching ? 100% avalanche tested ? improve dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switching mode power s upplies and active power factor correction. d g s to-220 fdp series g s d mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter FDP22N50N units v dss drain to source voltage 500 v v gss gate to source voltage 30 v i d d r a i n c u r r e n t -continuous (t c = 25 o c) 22 a -continuous (t c = 100 o c) 13.2 i dm d r a i n c u r r e n t - p u l s e d (note 1) 88 a e as single pulsed avalanche energy (note 2) 1000 mj i ar avalanche current (note 1) 22 a e ar repetitive avalanche energy (note 1) 31.25 mj dv/dt peak diode recovery dv/dt (note 3) 10 v/ns p d power dissipation (t c = 25 o c) 312.5 w - derate above 25 o c2.5w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDP22N50N units r jc thermal resistance, junction to case 0.4 o c/w r cs thermal resistance, case to sink typ. 0.5 r ja thermal resistance, junction to ambient 62.5 *drain current limited by maximum junction temperature
FDP22N50N n-channel mosfet FDP22N50N rev. a www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDP22N50N FDP22N50N to-220 - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, 500 - - v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.45 - v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 1 a v ds = 400v, t c = 125 o c--10 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 11a - 0.185 0.22 ? g fs forward transconductance v ds = 20v, i d = 11a - 24.4 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 2456 3200 pf c oss output capacitance - 351 460 pf c rss reverse transfer capacitance - 24 50 pf q g(tot) total gate charge at 10v v ds = 400v, i d = 22a v gs = 10v (note 4) -4965nc q gs gate to source gate charge - 15 - nc q gd gate to drain ?miller? charge - 19 - nc t d(on) turn-on delay time v dd = 250v, i d = 22a r g = 4.7 ? (note 4) -2255ns t r turn-on rise time - 50 110 ns t d(off) turn-off delay time - 48 110 ns t f turn-off fall time - 35 80 ns i s maximum continuous drain to source diode forward current - - 22 a i sm maximum pulsed drain to source diode forward current - - 88 a v sd drain to source diode forward voltage v gs = 0v, i sd = 22a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 22a di f /dt = 100a/ s - 472 - ns q rr reverse recovery charge - 6.5 - c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 4.1mh, i as = 22a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 22a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
FDP22N50N n-channel mosfet FDP22N50N rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 1 10 0.05 50 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0v 10.0v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 0.2 345678 0.1 1 10 100 *notes: 1. v ds = 20v 2. 250 s pulse test -55 o c 150 o c 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 0 1020304050 0.15 0.20 0.25 0.30 *note: t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] 0.2 0.6 1.0 1.4 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 0 1000 2000 3000 4000 5000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 0 1020304050 0 2 4 6 8 10 *note: i d = 22a v ds = 100v v ds = 250v v ds = 400v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDP22N50N n-channel mosfet FDP22N50N rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. vs. temperature temperature figure 9. maximum safe operating area figure 10. maximum drain current - FDP22N50N vs. case temperature figure 10. transient thermal response curve - FDP22N50N -75 -25 25 75 125 175 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -75 -25 25 75 125 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 11a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 110100 0.01 0.1 1 10 100 800 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 200 25 50 75 100 125 150 0 5 10 15 20 25 i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 11010 2 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] 0.003 t 1 p dm t 2
FDP22N50N n-channel mosfet FDP22N50N rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDP22N50N n-channel mosfet FDP22N50N rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body d iode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate pulse w idth gate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body d iode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate pulse w idth gate pulse period -------------------------- d = g ate pulse w idth gate pulse period --------------------------
FDP22N50N n-channel mosfet FDP22N50N rev. a www.fairchildsemi.com 7 mechanical dimensions 4.50 0.2 0 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.1 0 ?.0 5 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220
FDP22N50N n-channel mosfet www.fairchildsemi.com 8 FDP22N50N rev. a rev. i38 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life sup port device or system, or to affect its safety or effectiveness. product status definitions definition of terms build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? ? saving our world, 1mw /w /kw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? trifault detect? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product de velopment. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supp lementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semicond uctor reserves the right to make changes at any time withou t notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy . fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality st andards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.


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