inchange semiconductor product specification silicon npn power transistors D44C series description ? with to-220 package ? complement to type d45c series ? very low collector saturation voltage ? fast switching applications ? designed for various specific and general purpose application ? shunt and switching regulators ? low and high frequency inverters converters and etc. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit D44C1,2,3 40 D44C4,5,6 55 D44C7,8,9 70 v cbo collector-base voltage D44C10,11,12 open emitter 90 v D44C1,2,3 30 D44C4,5,6 45 D44C7,8,9 60 v ceo collector-emitter voltage D44C10,11,12 open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 4 a i cm collector current -peak 6 a i b base current (dc) 1 a p d total power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors D44C series characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit D44C2,3,5,6, 8,9,11,12 i c =1a ;i b =50ma v cesat collector-emitter saturation voltage D44C1,4,7,10 i c =1a ;i b =0.1a 0.5 v v besat base-emitter saturation voltage i c =1a ;i b =0.1a 1.3 v i ces collector cut-off current v ce =rated v ces ; 100 | a i ebo emitter cut-off current v eb =5v; i c =0 10 | a D44C3,6,9,12 40 120 D44C2,5,8,11 100 220 h fe-1 dc current gain D44C1,4,7,10 i c =0.2a ; v ce =1v 25 D44C1,4,7,10 i c =1a ; v ce =1v 10 h fe-2 dc current gain D44C2,3,5,6, 8,9,11,12 i c =2a ; v ce =1v 20 f t transition frequency i c =20ma;v ce =4v; f=1.0mhz 50 mhz switching times t r rise time 0.3 | s t s storage time 0.7 | s t f fall time i c =1.0a; v cc =20v i b1 =-i b2 =0.1a 0.4 | s
inchange semiconductor product specification 3 silicon npn power transistors D44C series package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)
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