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1 / 15 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 july 2012 as w114 5 - 800 0 mhz mmic amplifier parameters units typical frequency mhz 900 2000 3500 5800 900 2000 3500 gain db 20 17 13.5 10.5 20.5 17 14 s11 db - 18 - 14 - 18 - 14 - 20 - 14 - 16 s22 db - 15 - 15 - 15 - 18 - 16 - 16 - 18 output ip3 1) dbm 24.5 26 26.5 23 29.5 29 -- noise figure db 3.2 3.3 4.2 3.9 3.1 3.3 4.3 output p1db dbm 12.5 13 14 12 14.5 14.5 14.5 current ma 37 53 device voltage v 3.2 3.3 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1 mhz. parameters units min typ max testing frequency mhz 2000 gain db 16.5 17 s11 db - 14 s22 db - 15 output ip3 dbm 24 26 noise figure db 3.3 3.5 output p1db dbm 12 13 current ma 32 37 42 device voltage v 3.2 parameters rating operating case temperature - 40 to + 85 c storage temperature - 40 to + 150 c device voltage +3.5 v operating junction temper a ture + 150 c input rf power ( cw, 50ohm matched)* 25 dbm * please find the max. input power data from http://www.asb.co.kr/pdf/maximum_input_power_analysis.pdf feature s description typical perfor m ance abso lute maximum ratings 17 db gain at 2000 mhz 14.5 dbm p1db at 2000 mhz 29 dbm oip3 at 2000 mhz 3.3 db nf at 2000 mhz mttf > 100 years single supply th e ASW114, a power amplifier mmic, has a high linearity , high gain, and high efficiency over a wide range of frequency, being sui t able for use in both receiver and transmitter of telecommunication sy s- tems up to 8 ghz. the amplifier is available in a n sot - 36 3 package and passes through the stri n gent dc, rf, and reliability tests. application circuit 5 ~ 140 mhz if 500 ~ 3500 mhz 300 ~ 2170 mhz 4000 ~ 6000 mhz 6500 ~ 78 00 mhz atsc (57 ~ 213 mhz) dvb - t (v/u band) 950 ~ 2150 mhz (smatv) 50 ~ 1000mhz (catv / 75ohms) 50 ~ 2150mhz (smatv / 75ohms) product specifications package style: sot - 363 pin configuration pin no. function 3 rf in 6 rf out / bias 1,2,4,5 gnd
2 / 15 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 july 2012 as w114 5 - 800 0 mhz mmic amplifier note : 1. the number and size of ground via holes in a circuit board is critical for thermal and rf grounding consi d erations. 2. we recommend that the ground via holes be placed on the bottom of lead pin 2 for better rf and thermal perfor m ance, as shown in the dra w ing at the left side. pin no. function pin no. function. 1 gnd 4 gnd 2 gnd 5 gnd 3 rf in 6 rf out / bias moun ting recommendation (in mm) outline drawing part number description ordering information symbols dimensions (in mm) min nom max a 0.90 1.00 1.10 a1 0.025 0.062 0.10 a2 0.875 0.937 1.00 b 0.20 0.30 0.40 c 0.10 0.125 0.15 d 1.90 2.00 2.10 f 1.15 1.25 1.35 e1 2.00 2.10 2.20 e -- 0.65bsc -- e1 -- 1.30bsc -- l -- 0.425ref --
3 / 15 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 july 2012 as w114 5 - 800 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +0 dbm/tone sep a- rated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 5 140 magnitude s21 (db) 20.5 20.5 magnitude s11 (db) - 18 - 18 magnitude s22 (db) - 14 - 14 output p1db (dbm) 10 9.5 output ip3 1) (dbm) 19 18.5 noise figure (db) 3.0 2.9 device voltage (v) 3.2 3.2 current (ma) 37 37 5 ~ 140 m hz +3.2 v vcc=3.2 v rf in rf out c3=100pf c4=1 m f d1=5.6v zener diode ASW114 c1=1 m f c2=1 m f l1=54 m h (27 m h +27 m h) 0 100 200 300 400 500 0 5 10 15 20 25 gain (db) frequency (mhz) 0 50 100 150 200 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 100 200 300 400 500 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz)
4 / 15 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 july 2012 as w114 5 - 800 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 70 150 300 450 magnitude s21 (db) 21 21 21 20.5 magnitude s11 (db) - 15 - 18 - 18 - 18 magnitude s22 (db) - 18 - 16 - 16 - 16 output p1db (dbm) 12 12 12 12 output ip3 1) (dbm) 22.5 22.5 23 23.5 noise figure (db) -- -- -- -- device voltage (v) 3.2 3.2 3.2 3.2 current (ma) 37 37 37 37 if 70 ~ 450 mhz +3.2 v 100 200 300 400 500 0 5 10 15 20 25 gain (db) frequency (mhz) 100 200 300 400 500 -35 -30 -25 -20 -15 -10 -5 s11 (db) frequency (mhz) 100 200 300 400 500 -35 -30 -25 -20 -15 -10 -5 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) c1=1000 pf l1=680 nh c2=1000 pf vcc=3.2 v rf in rf out c3=100pf c4=1 m f d1=5.6v zener diode ASW114
5 / 15 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 july 2012 as w114 5 - 800 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1 mhz. ` board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit 500 ~ 3500 mhz +3.2 v frequency (mhz) 500 900 1750 2000 2400 2700 3500 magnitude s21 ( db) 20.5 20 17.5 17 16 15.3 13.5 magnitude s11 (db) - 15 - 18 - 14 - 14 - 15 - 15 - 18 magnitude s22 (db) - 13 - 15 - 15 - 15 - 18 - 18 - 15 output p1db (dbm) 12.5 12.5 13 13 13.5 13.5 14 output ip3 1) (dbm) 25 24.5 25 26 26.5 25.5 26.5 noise figure (db) 3.2 3.2 3.2 3.3 3.3 3.4 4.2 device voltage (v) 3.2 current (ma) 37 0 500 1000 1500 2000 2500 3000 3500 4000 0 1 2 3 4 5 stability factor frequency (mhz) c1=100 pf l1=33 nh c2=100 pf vcc=3.2 v rf in rf out c3=100pf c4=1 m f d1=5.6v zener diode ASW114 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 gain (db) frequency (mhz) -40 o c 25 o c 85 o c 0 500 1000 1500 2000 2500 3000 3500 4000 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) -40 o c 25 o c 85 o c 0 500 1000 1500 2000 2500 3000 3500 4000 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) -40 o c 25 o c 85 o c
6 / 15 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 july 2012 as w114 5 - 800 0 mhz mmic amplifier p1db vs. frequency current vs. temperature output ip3 v s. tone power (frequency = 2000mhz) output ip3 vs. frequency -60 -40 -20 0 20 40 60 80 100 0 10 20 30 40 50 60 current (ma) temperature ( o c) gain vs. temperature -60 -40 -20 0 20 40 60 80 100 17 18 19 20 21 22 gain (db) temperature ( o c) frequency = 900 mhz 0 500 1000 1500 2000 2500 3000 3500 4000 6 8 10 12 14 16 18 p1db (dbm) frequency (mhz) -40 o c 25 o c 85 o c 0 500 1000 1500 2000 2500 3000 14 16 18 20 22 24 26 28 30 32 output ip3 (dbm) frequency (mhz) -40 o c 25 o c 85 o c -6 -4 -2 0 2 4 6 8 10 12 5 10 15 20 25 30 35 output ip3 (dbm) p out per tone (dbm) -40 o c 25 o c 85 o c
7 / 15 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 july 2012 as w114 5 - 800 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1 mhz. ` board layout ( fr4, 40x40 mm 2 , 0.8t) sc hematic s - parameters & k - factor application circuit 500 ~ 3500 mhz +3.3 v frequency (mhz) 500 900 1750 2000 2400 2700 3500 magnitude s21 (db) 21 20.5 18 17 16 15.5 14 magnitude s11 (db) - 18 - 20 - 14 - 14 - 14 - 13 - 16 magnitude s22 (db) - 13 - 16 - 14 - 16 - 18 - 18 - 18 output p1db (dbm) 14.5 14.5 14.5 14.5 14.5 14 14.5 output ip3 1) (dbm) 30 29.5 29 29 29 27 -- noise figure (db) 3.4 3.1 3.2 3.3 3.4 3.5 4.3 device voltage (v) 3.3 current (ma) 53 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 gain (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 4000 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 4000 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 4000 0 1 2 3 4 5 stability factor frequency (mhz) c1=100 pf l1=33 nh c2=100 pf vcc=3.3 v rf in rf out c3=100pf c4=1 m f d1=5.6v zener diode ASW114
8 / 15 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 july 2012 as w114 5 - 800 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of - 5 dbm/tone separated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 300 900 2000 2700 magnitude s21 (db) 19.3 19 16.4 15 magnitude s11 (db) - 10 - 15 - 15 - 18 magnit ude s22 (db) - 8 - 13 - 14 - 16 output p1db (dbm) 11 11 11.5 12 output ip3 1) (dbm) 17.0 17.5 18.5 22 noise figure (db) 3.2 3 3 3.3 device voltage (v) 3.1 3.1 3.1 3.1 current (ma) 25 25 25 25 300 ~ 2700 mhz +3.1 v c1=100 pf l1=33 nh c2=100 pf vcc=3.1 v rf in rf out c3=100pf c4=1 m f d1=5.6v zener diode ASW114 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 gain (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 4000 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 4000 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 4000 0 1 2 3 4 5 stability factor frequency (mhz)
9 / 15 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 july 2012 as w114 5 - 800 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +0 dbm/tone s eparated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 4000 5000 5800 6000 magnitude s21 (db) 13 11.5 10.5 10.5 magnitude s11 (db) - 18 - 18 - 14 - 14 m agnitude s22 (db) - 14 - 16 - 18 - 16 output p1db (dbm) 13 12 12 11 output ip3 1) (dbm) 25 25 23 22.5 noise figure (db) 3.4 3.8 3.9 3.9 device voltage (v) 3.2 3.2 3.2 3.2 current (ma) 37 37 37 37 4000 ~ 6000 mhz +3.2 v 3000 3500 4000 4500 5000 5500 6000 6500 7000 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 3000 3500 4000 4500 5000 5500 6000 6500 7000 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 1000 2000 3000 4000 5000 6000 7000 8000 0 1 2 3 4 5 stability factor frequency (mhz) 3000 3500 4000 4500 5000 5500 6000 6500 7000 0 5 10 15 20 gain (db) frequency (mhz) c1=5 pf l1=6.8 nh c2=5 pf vcc=3.2 v rf in rf out c3=10 pf c4=1 m f d1=5.6v zener diode ASW114
10 / 15 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 july 2012 as w114 5 - 800 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of - 10 dbm/tone separated by 1 mhz. 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 1 2 3 4 5 stability factor frequency (mhz) 6200 6400 6600 6800 7000 7200 7400 7600 7800 8000 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 6200 6400 6600 6800 7000 7200 7400 7600 7800 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 6200 6400 6600 6800 7000 7200 7400 7600 7800 8000 0 2 4 6 8 10 12 gain (db) frequency (mhz) board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 6500 7800 magnitude s21 (db) 9.8 9.1 magnitude s11 (db) - 11 - 8 magnitude s22 (db) - 18 - 18 output p1db (dbm) 6 3 output ip3 1) (dbm) 15.5 14.0 noise figure (db) 5.6 5.5 device voltage (v) 3.2 3.2 current (ma) 37 37 6500 ~ 7800 mhz +3.2 v c 1 = 1 p f c 2 = 4 p f vs = 3 . 2 v rf in rf out c 5 = 10 p f asw 114 c 3 = 0 . 3 p f l 1 = 5 . 6 n h c 6 = 1 m f c 4 = 0 . 3 p f d 1 = 5 . 6 v zener diode
11 / 15 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 july 2012 as w114 5 - 800 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of - 5 dbm/tone sep a- rated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor applic a tion ci r cuit frequency (mhz) 57 213 magnitude s21 (db) 20 20 magnitude s11 (db) - 15 - 15 magnitude s22 (db) - 12 - 13 output p1db (dbm) 10.5 10.5 output ip3 1) (dbm) 18.5 19 noise figure (db) 2.7 2.8 device voltage (v) 3.1 3.1 current (ma) 25 25 atsc 57 ~ 213 mhz +3.1 v c1=10 nf l1=680 nh c2=10 nf vcc=3.1 v rf in rf out c3=100pf c4=1 m f d1=5.6v zener diode ASW114 0 100 200 300 400 500 0 5 10 15 20 25 gain (db) frequency (mhz) 0 100 200 300 400 500 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 100 200 300 400 500 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz)
12 / 15 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 july 2012 as w114 5 - 800 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +0 dbm/tone sep a- rated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 170 860 magnitude s21 (db) 20 18.5 magnitude s11 (db) - 15 - 14 magnitude s22 (db) - 12 - 15 ou tput p1db (dbm) 11 10 output ip3 1) (dbm) 20 19 noise figure (db) 2.7 2.8 device voltage (v) 3.1 3.1 current (ma) 25 25 dvb - t ( v / u band) 170 ~ 860 mhz +3.1 v c1=1000 pf l1=100 nh c2=1000 pf vcc=3.1 v rf in rf out c3=100pf c4=1 m f d1=5.6v zener diode ASW114 0 200 400 600 800 1000 0 5 10 15 20 25 gain (db) frequency (mhz) 0 200 400 600 800 1000 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 200 400 600 800 1000 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz)
13 / 15 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 july 2012 as w114 5 - 800 0 mhz mmic amplifier 1) oip3 is measu red with two tones at an output power of +0 dbm/tone separated by 1 mhz. ` board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - f actor application circuit smatv 950 ~ 2150 mhz +3.3 v frequency (mhz) 950 1500 2000 magnitude s21 (db) 20.5 18.5 17 magnitude s11 (db) - 20 - 14 - 14 magnitude s22 (db) - 16 - 14 - 16 output p1db (dbm) 14.5 14.5 14.5 output ip3 1) (dbm) 29 .5 29 29 noise figure (db) 3.1 3.2 3.3 device voltage (v) 3.3 current (ma) 53 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 gain (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 4000 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 4000 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 4000 0 1 2 3 4 5 stability factor frequency (mhz) c1=100 pf l1=33 nh c2=100 pf vcc=3.3 v rf in rf out c3=100pf c4=1 m f d1=5.6v zener diode ASW114
14 / 15 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 july 2012 as w114 5 - 800 0 mhz mmic amplifier 1) oip3 and oip2 are measured with two tones at an output power of +0 dbm/tone separated by 6 mhz. 2) oip2 is measured at f1+f2 frequency. l1=820 nh vs=3.1 v rf in rf out c3=1 m f ASW114 c1=1 m f c2=1 m f 0 200 400 600 800 1000 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 200 400 600 800 1000 0 5 10 15 20 25 gain (db) frequency (mhz) 0 200 400 600 800 1000 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 50 500 860 magnitude s21 (db) 19.5 19 18.5 magnitude s11 (db) - 12.5 - 17 - 20 magnitude s22 (db) - 15 - 20 - 15 output p1db (dbm) 11 11 11 output ip3 1) (dbm) 17 19 20 output ip2 1),2) (dbm) 16 24 26 noise figure (db) 2.9 3.1 3.2 device voltage (v) 3.1 3.1 3.1 current (ma) 25 25 25 catv (75 ohms) 50 ~ 1000 mhz +3.1 v
15 / 15 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 july 2012 as w114 5 - 800 0 mhz mmic amplifier 1) oip3 and oip2 are measured with two tones at an output power of +0 dbm/tone separated by 6 mhz. 2) oip2 is measured at f1+f2 frequency. 0 500 1000 1500 2000 2500 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 0 5 10 15 20 25 gain (db) frequency (mhz) 0 500 1000 1500 2000 2500 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 50 1000 2150 magnitude s21 (db) 19.8 18.9 16.0 magnitude s11 (db) - 11 - 16 - 20 magnitude s22 (db) - 13 - 16 - 20 output p1db (dbm) 7 9 7 output ip3 1) (dbm) 17 20 17 output ip2 1),2) (dbm) 18 29 25 noise figure (db) 3.2 3.0 3.2 device voltage (v) 3.1 3.1 3.1 current (ma) 25 25 25 smatv (75 ohms) 50 ~ 2150 mhz +3.1 v c 1 = 1 m f c 2 = 1 m f vs = 3 . 1 v rf in rf out c 4 = 1 m f asw 114 c 3 = 0 . 5 p f l 1 = 1 m h ( lqh 31 cn 1 r 0 m 03 )

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