ace 2301b p - channel enhancement mode mosfet ver 1. 3 1 d escription ACE2301B is produced with high cell density dmos trench technology, which is especially used to minimize on - state resistance. this device particularly suits low voltage applications such as portable equipment, power management and other batter y powered circuits, and low in - line power dissipation are needed in a very small outline surface mount package with excellent thermal and electrical capabilities. features ? v ds = - 2 0v , v gs 8v, i d = - 2.3a ? r ds(on) @v gs = - 4.5v/i d - 2.8a, 100mr(typ.) ? r ds(on) @v gs = - 2 .5v/i d - 2a, 120mr(typ.) absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds s - 2 0 v gate - source voltage v gs s 8 v drain current continuous i d - 2.3 a pulsed (1) - 10 power dissipation 25 o c p d 750 mw 70 o c 480 operating an d storage temperature range t j , t stg - 55 to 150 o c packaging type sot - 23 - 3 3 1 2 sot - 23 - 3 description 1 gate 2 source 3 drain
ace 2301b p - channel enhancement mode mosfet ver 1.3 2 ordering i nformation ace 230 1 b xx + h electrical characteristic s t a =2 5 o c un less otherwise noted parameter symbol conditions min. typ. max. unit off characteristics drain - source breakdown voltage v (br)dss v gs =0v, i d = - 250ua - 2 0 v drain cut - off current i dss v ds = - 2 0 v, v gs =0v - 1 ua gate - source leakage current i gss v gs = 8 v, v ds =0v 100 na on characteristics drain - source on - state resistance r ds(on) v gs = - 4.5v, i d = - 2.8 a 100 130 m r r ds(on ) v gs = - 2.5 v, i d = - 2 a 120 200 gate threshold voltage v gs(th) v ds =v gs , i d = - 250ua - 0.45 - 0.75 - 1.5 v forward transconductance g fs v ds = - 5v, i d = - 2.8a 6 .5 s switching characteristics (3) turn - on delay time t d(on) v dd = - 6v,r l =6 r i d = - 1a, v gen = - 4.5v rg=6r 13 25 ns turn - off delay time t d(off) 42 70 dynamic characteristics (3) input capacitance c iss v ds = - 6v, v gs =0v f =1.0mhz 415 pf output capacitance c oss 223 feedback capacitance c rss 87 drain - source diode characteristics and maximum ratings diode forward voltage v sd i s = - 1.6a,v gs =0v - 0.5 - 1.2 v note: 1. pulse width limited by maximum junction temperature 2. puls e test: pw Q 300us, duty cycle Q 2% 3. for design aid only, not subject to production testing 4. switching time is essentially independent of operating temperature bm : sot - 23 - 3 pb - free halogen - free
ace 2301b p - channel enhancement mode mosfet ver 1.3 3 typical performance characteristics
ace 2301b p - channel enhancement mode mosfet ver 1.3 4 packing information sot - 23 - 3 unit: mm
ace 2301b p - channel enhancement mode mosfet ver 1.3 5 notes ace does not assume any responsibility for use as critical components in life support devices or system s without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or su stain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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