specifications of any and all sanyo semiconductor co.,l td. products described or contained herein stipulate the performance, characteristics, and functions of t he described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' sproductsor equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equi pment etc.). the products mentioned herein shall not be intended for use for any "special application" (medica l equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation mach ine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly t hreaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for app lications outside the standard applications of our customer who is considering such use and/or outside th e scope of our intended standar d applications, please consult with us prior to the intended use. if there is n o consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 52307 ms im / 32207 ms im 20061130-s00001 no.a0728-1/10 LV5122T overview the LV5122T is a protection ic for 2-cell lithium-ion secondary batteries. features ? monitoring function for each cell: detects overcharge and over-discharge conditions and controls the charging and discharging operation of each cell. ? high detection voltage accuracy: over-charge detection accuracy 25mv over-discharge detection accuracy 100mv ? hysteresis cancel function: the hy steresis of over-discharge detec tion voltage is canceled by sensing the connection of a load after overcharging has been detected. ? discharge current monitoring function: detects over-currents and load shorting, and an excessive discharge current is controlled. ? low current consumption: normal operation mode typ. 6.0 a stand by mode max. 0.2 a ? 0v cell charging function: charging is enabled even when the cell voltage is 0v by giving a potential difference between the v dd pin and v - pin. ordering number : ena0728a cmos ic 2-cell lithium-ion secondary battery protection ic www.datasheet.co.kr datasheet pdf - http://www..net/
LV5122T no.a0728-2/10 specifications absolute maximum ratings at ta = 25 c parameter symbol conditions ratings unit power supply voltage v dd -0.3 to +12 v input voltage charger minus voltage v - v dd -28 to v dd +0.3 v cout pin voltage vcout v dd -28 to v dd +0.3 v output voltage dout pin voltage vdout v ss -0.3 to v dd +0.3 v allowable power dissipation pd max independent ic 170 mw operating ambient temperature topr -30 to +80 c storage temperature tstg -40 to +125 c electrical characteristics 1 at ta = 25 c, unless especially specified. ratings parameter symbol conditions min typ max unit operation input voltage vcell between v dd and v ss 1.5 10 v 0v cell charging minimum operation voltage vmin between v dd -v ss =0 and v dd -v - 1.5 v over-charge detection volt age vd1 4.325 4.350 4.375 v over-charge reset voltage vh1 4.100 4.150 4.200 v over-charge detection delay time td1 v dd -vc=3.5v 4.5v, vc-v ss =3.5v 0.5 1.0 1.5 s over-charge reset delay time tr1 v dd -vc=4.5v 3.5v, vc-v ss =3.5v 20.0 40.0 60.0 ms over-discharge detection voltage vd2 2.20 2.30 2.40 v over-discharge reset hysteres is voltage vh2 10.0 20.0 40.0 mv over-discharge detection delay time td2 v dd -vc=3.5v 2.2v, vc-v ss =3.5v 50 100 150 ms over-discharge reset delay time tr2 v dd -vc=2.2v 3.5v, vc-v ss =3.5v 0.5 1.0 1.5 ms over-current detection voltage vd3 v dd -vc=3.5v, vc-v ss =3.5v 0.28 0.30 0.32 v over-current reset hysteresis voltage vh3 v dd -vc=3.5v, vc-v ss =3.5v 5.0 10.0 20.0 mv over-current detection delay time td3 v dd -vc=3.5v, vc-v ss =3.5v 2.5 5.0 7.5 ms over-current reset delay time tr3 v dd -vc=3.5v, vc-v ss =3.5v 0.5 1.0 1.5 ms short circuit detection voltage vd4 v dd -vc=3.5v, vc-v ss =3.5v 1.0 1.3 1.6 v short circuit detection delay time td4 v dd -vc=3.5v, vc-v ss =3.5v 0.2 0.5 0.8 ms standby reset voltage vstb between v dd -vc=2.0v, vc-v ss =2.0v (v - )-v ss v dd 0.4 v dd 0.5 v dd 0.6 v reset resistance (connected to v dd ) r dd 100 200 400 k ? reset resistance (connected to v ss ) r ss 0.5 1.0 1.5 m ? cout nch on voltage v o l1 i o l=50 a, v dd -vc=4.4v, vc-v ss =4.4v 0.5 v cout pch on voltage v o h1 i o l=50 a, v dd -vc=3.9v, vc-v ss =3.9v v dd -0.5 v dout nch on voltage v o l2 i o l=50 a, v dd -vc=vd2(min), vc-v ss =vd2(min) 0.5 v dout pch on voltage v o h2 i o l=50 a, v dd -vc=3.9v, vc-v ss =3.9v v dd -0.5 v vc input current ivc v dd -vc=3.5v, vc-v ss =3.5v 0.0 1.0 a current drain i dd v dd -vc=3.5v, vc-v ss =3.5v 6.0 13.0 a standby current istb v dd -vc=2.2v, vc-v ss =3.5v 0.2 a www.datasheet.co.kr datasheet pdf - http://www..net/
LV5122T no.a0728-3/10 electrical characteristics 2 at ta = -20 to 70 c, unless especially specified. ratings parameter symbol conditions min typ max unit operation input voltage vcell between v dd and v ss 1.65 10 v 0v cell charging minimum operation voltage vmin between v dd -v ss =0 and v dd -v - 1.65 v over-charge detection volt age vd1 4.305 4.350 4.390 v over-charge reset voltage vh1 4.080 4.150 4.215 v over-charge detection delay time td1 v dd -vc=3.5v 4.5v, vc-v ss =3.5v 0.350 1.000 1.950 s over-charge reset delay time tr1 v dd -vc=4.5v 3.5v, vc-v ss =3.5v 14.0 40.0 78.0 ms over-discharge detection voltage vd2 2.18 2.30 2.42 v over-discharge reset hysteres is voltage vh2 8.0 20.0 42.0 mv over-discharge detection delay time td2 v dd -vc=3.5v 2.2v, vc-v ss =3.5v 35 100 195 ms over-discharge reset delay time tr2 v dd -vc=2.2v 3.5v, vc-v ss =3.5v 0.35 1.0 1.95 ms over-current detection voltage vd3 v dd -vc=3.5v, vc-v ss =3.5v 0.271 0.300 0.329 v over-current reset hysteresis voltage vh3 v dd -vc=3.5v, vc-v ss =3.5v 3.5 10.0 23.0 mv over-current detection delay time td3 v dd -vc=3.5v, vc-v ss =3.5v 1.75 5.00 9.75 ms over-current reset delay time tr3 v dd -vc=3.5v, vc-v ss =3.5v 0.35 1.00 1.95 ms short circuit detection voltage vd4 v dd -vc=3.5v, vc-v ss =3.5v 0.9 1.3 1.7 v short circuit detection delay time td4 v dd -vc=3.5v, vc-v ss =3.5v 0.14 0.5 1.04 ms standby reset voltage vstb between v dd -vc=2.0v, vc-v ss =2.0v (v - )-v ss v dd 0.4 v dd 0.5 v dd 0.6 v reset resistance (connected to v dd ) r dd 70 200 520 k ? reset resistance (connected to v ss ) r ss 0.35 1.0 1.95 m ? cout nch on voltage v o l1 i o l=50 a, v dd -vc=4.4v, vc-v ss =4.4v 0.5 v cout pch on voltage v o h1 i o l=50 a, v dd -vc=3.9v, vc-v ss =3.9v v dd -0.5 v dout nch on voltage v o l2 i o l=50 a, v dd -vc=vd2(min), vc-v ss =vd2(min) 0.5 v dout pch on voltage v o h2 i o l=50 a, v dd -vc=3.9v, vc-v ss =3.9v v dd -0.5 v vc input current ivc v dd -vc=3.5v, vc-v ss =3.5v 0.0 1.0 a current drain i dd v dd -vc=3.5v, vc-v ss =3.5v 6.0 16.9 a standby current istb v dd -vc=2.2v, vc-v ss =3.5v 0.2 a the ratings of the table above is a design guarantees and are not measured. www.datasheet.co.kr datasheet pdf - http://www..net/
LV5122T no.a0728-4/10 electrical characteristics 3 at ta = -30 to 85 c, unless especially specified. ratings parameter symbol conditions min typ max unit operation input voltage vcell between v dd and v ss 1.73 10 v 0v cell charging minimum operation voltage vmin between v dd -v ss =0 and v dd -v - 1.73 v over-charge detection volt age vd1 4.295 4.350 4.395 v over-charge reset voltage vh1 4.070 4.150 4.220 v over-charge detection delay time td1 v dd -vc=3.5v 4.5v, vc-v ss =3.5v 0.3 1.0 2.1 s over-charge reset delay time tr1 v dd -vc=4.5v 3.5v, vc-v ss =3.5v 12.0 40.0 84.0 ms over-discharge detection voltage vd2 2.17 2.30 2.43 v over-discharge reset hysteres is voltage vh2 6.0 20.0 42.0 mv over-discharge detection delay time td2 v dd -vc=3.5v 2.2v, vc-v ss =3.5v 30 100 210 ms over-discharge reset delay time tr2 v dd -vc=2.2v 3.5v, vc-v ss =3.5v 0.3 1.0 2.1 ms over-current detection voltage vd3 v dd -vc=3.5v, vc-v ss =3.5v 0.267 0.300 0.333 v over-current reset hysteresis voltage vh3 v dd -vc=3.5v, vc-v ss =3.5v 2.5 10.0 240 mv over-current detection delay time td3 v dd -vc=3.5v, vc-v ss =3.5v 1.5 5.0 10.5 ms over-current reset delay time tr3 v dd -vc=3.5v, vc-v ss =3.5v 0.3 1.0 2.1 ms short circuit detection voltage vd4 v dd -vc=3.5v, vc-v ss =3.5v 0.8 1.3 1.8 v short circuit detection delay time td4 v dd -vc=3.5v, vc-v ss =3.5v 0.12 0.5 1.12 ms standby reset voltage vstb between v dd -vc=2.0v, vc-v ss =2.0v (v - )-v ss v dd 0.4 v dd 0.5 v dd 0.6 v reset resistance (connected to v dd ) r dd 60 200 560 k ? reset resistance (connected to v ss ) r ss 0.3 1.0 2.1 m ? cout nch on voltage v o l1 i o l=50 a, v dd -vc=4.4v, vc-v ss =4.4v 0.5 v cout pch on voltage v o h1 i o l=50 a, v dd -vc=3.9v, vc-v ss =3.9v v dd -0.5 v dout nch on voltage v o l2 i o l=50 a, v dd -vc=vd2(min), vc-v ss =vd2(min) 0.5 v dout pch on voltage v o h2 i o l=50 a, v dd -vc=3.9v, vc-v ss =3.9v v dd -0.5 v vc input current ivc v dd -vc=3.5v, vc-v ss =3.5v 0.0 1.0 a current drain i dd v dd -vc=3.5v, vc-v ss =3.5v 6.0 18.2 a standby current istb v dd -vc=2.2v, vc-v ss =3.5v 0.2 a the ratings of the table above is a design guarantees and are not measured. www.datasheet.co.kr datasheet pdf - http://www..net/
LV5122T no.a0728-5/10 package dimensions unit : mm (typ) 3245b pin assignment pin functions pin no. symbol description 1 v dd v dd pin 2 cout overcharge detection output pin 3 v - charger minus voltage input pin 4 v ss v ss pin 5 sense sense pin 6 vc intermediate voltage input pin 7 t pin to shorten detection time (open under normal condition) 8 dout overdischarge detection output pin pd max -- ta -30 -20 0 20 40 60 80 100 68 0 50 100 150 200 170 independent ic ambient temperature, ta -- c allowable power dissipation, pd max -- mw 1 v dd 2 cout 3 v - 4 v ss 8 7 6 5 dout t vc sense top view sanyo : msop8(150mil) 3.0 1.1max 3.0 0.5 4.9 12 8 0.25 0.65 (0.53) (0.85) 0.125 0.08 www.datasheet.co.kr datasheet pdf - http://www..net/
LV5122T no.a0728-6/10 block diagram 6 + - + - + - + - 4 5 + - 3 td1,tr1 td2,tr2 td3,tr3 + - 1 td4 2 8 v ss v - sence v dd vc cout dout 7 t delay conrol logic www.datasheet.co.kr datasheet pdf - http://www..net/
LV5122T no.a0728-7/10 functional description over-charge detection if either of the cell voltage is equal to or more than the over-charge detection voltage, stop further charging by turning ?l? the cout pin and turning off external nch mo s fet after the over-charge detection delay time. this delay time is set by the internal counter. the over-charge detection comparator ha s the hysteresis function. note that this hysteresis can be cancelled by connecting the load after detec tion of over-charge detection. once over-charge detection is made, over-current detection is not made to prevent malfunction. note that short- circuit can be detected. over-charge return if charger is connected and both cell voltages become equal to or lower than the over-charge recovery voltage or over-charge detection voltage when load is connected, the cout pin returns to ?h? after the over-charge recovery delay time set by the internal counter. when load is connected and either cell or both cell volta ges are equal to or more than the over-charge detection voltage, the cout pin does not return to ?h.? when the load current is passed through the external cout pin parasite diode of nch mos fet after the over-charge recovery delay time and each cell voltage becomes equal to or below over-charge detection voltage, the cout returns to ?h.? over-discharge detection when either cell voltage is equal to or below over-discharge voltage, stop further discharge by turning ?l? the dout pin and turning off external nch mos fet after the over-charge detection delay time. the ic becomes standby state after detecting over-discharge and its consumption current is kept at about 0a. after detection, the v - pin will be connected to v dd pin via 200k ? . over-discharge return return from over-discharge is made by connecting charger. if the v - pin voltage becomes equal to or lower than the standby return voltage by connecting ch arger after detecting over-discharge, it returns from the stan dby state to start cell voltage monitoring. if both voltages become equal to or more than the over-discharge detection voltage by charging, the dout pin returns to ?h ? after the over-discharge return. over-current detection when high current is passed through the battery, the v pote ntial rises by the on resister of external mos fet and becomes equal to or more than the over-current detection voltage, that will be deemed over-current state. turn ?l? the dout pin after the over-current detection delay time and turn off the external nch mos fet to prevent high current in the circuit. the delay time is set by the internal counter. after detection, the v - pin will be connected to v ss via 1m ? . it will not go into standby state after detecting over-current. short circuit detection if greater discharge current is passed and the v - pin voltage becomes equal to or more than the short-circuit detection voltage, it will go into short-circuit detection state after th e short circuit delay time shorter than the over-current detection delay time. when short-circuit is detected, just like the time of over-current detection, turn dout pin ?l? and turn off external nch mos fet to prev ent high current in the circuit. the v - pin will be connected to v ss after detection via 30k ? . it will not go into standby state after detecting short-circuit. over-current/short-detection return after detecting over-current or short circuit, the return resistor (typ.1m ? ) between v - pin and v ss pin becomes effective and if the resistor is opened the v - pin voltage will be pulled by the v ss pin voltage. thereafter, the ic will return from the over-current/short-circuit detection state when the v - pin voltage becomes equal to or below the over- current detection voltage and the dout pin returns to ?h? after over-current return delay time set by the internal counter. www.datasheet.co.kr datasheet pdf - http://www..net/
LV5122T no.a0728-8/10 0v cell charge if the cell voltage is 0v but a potential difference between v dd and v becomes equal to or greater than the 0v cell charging lowest operation voltage, the cout pin will output ?h? and enable charging. test time reduction function by turning t pin to the v dd potential, the delay times set by the counter can be cut. normal time settings if t pin is open. delay time not set by the counter cannot be controlled by this pin. operation in case of detection overlap overlap state operation in case of detection overlap state after detection when, during over- charge detection, over-discharge detection is made, over-charge detection is preferred. if over- discharge state continues even after over- charge detection, over-discharge detection is resumed. when over-charge detection is made first, v - is released. when over-discharge is detected after over-charge detection, the standby state is not effectuated. note that v - is connected to v dd via 200k ? . over-current detection is made, (*1) both detections? can be made in parallel. over-charge detection continues even when the over-current state occu rs. if the over-charge state occurs first, ove r-current detection is interrupted. (*2) when over-current is detected first, v - is connected to v ss via 1m ? . when over-charge detection is made first, v - is released. when, during over- discharge detection, over-charge detection is made, over-discharge detection is interrupted and over-charge detection is preferred. when over- discharge state continues even after over- charge detection, over-discharge detection is resumed. the standby state is not effectuated when over- discharge detection is made after over-charge detection. note that v - is connected to v dd via 200k ? . over-current detection is made, (*3) both detections can be made in parallel. over-discharge detection continues even when the over-current state is effectuated first. over- current detection is interrupted when the over- discharge state is effectuated first, (*4) if over-current is detected in advance, v will be connected to v ss via 1m ? . after detecting over-discharge, v will be connected to v dd via 200k ? to get into standby state. if over- discharge is detected in advance, v will be connected to v dd via 200k ? to get into standby state. over-charge detection is made, (*1) (*2) when, during over- current detection, over-discharge detection is made, (*3) (*4) (note) short-circuit detection can be made independently. www.datasheet.co.kr datasheet pdf - http://www..net/
LV5122T no.a0728-9/10 timing chart [cout output system] [dout output system] v dd v - vd1 vr1 vd2 vd3 vd4 v dd v ss v ss v dd dout td2 tr2 td3 tr3 td4 tr3 v dd v - cout vd1 vr1 vd2 vd3 vd4 v dd v ss v- v dd td1 tr1 td1 tr1 vd5 v - v dd cout vd5 td2 hysteresis cancellation by load connection charger connection load connection charger connection charger connection load connection discharging via fetparasite di over-charge detection state over-charge detection state charger connection load connection load connection load connection load connection charger connection charger connection over-current occurrence load short-circuit occurrence to standby to standby charging via fetparasite di charging via fetparasite di over-discharge detection state over-current detection state short-circuit detection state charge return charge return www.datasheet.co.kr datasheet pdf - http://www..net/
LV5122T ps no.a0728-10/10 sanyo semiconductor co.,ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rate d values (such as maximum ra tings, operating condition ranges, or other parameters) listed in products specif ications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-qual ity high-reliability products, however, any and all semiconductor products fail or malfunction with some probabi lity. it is possible that these probabilistic failures or malfunction could give rise to acci dents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. when designing equipment, adopt safety measures so that these kinds of accidents or e vents cannot occur. such measures include but are not limited to protective circuits and error prevention c ircuits for safe design, redundant design, and structural design. upon using the technical information or products descri bed herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable f or any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagr ams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equi pment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor c o.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities conc erned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any in formation storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. application circuit example components recommended value max unit r1, r2 100 1k ? r3 2k 4k ? r4 100 10k ? c1, c2, c3 0.1 1 f * these numbers don't mean to guara ntee the characteristic of the ic. * in addition to the components in the upper diagram, it is necessary to insert a capacitor with enough capacity between v dd and v ss of the ic as near as possible to stab ilize the power supply voltage to the ic. this catalog provides information as of may, 2007. specifications and inform ation herein are subject to change without notice. v dd cout v - v ss dout vc sense LV5122T + ? r1 r2 c1 c2 r4 r3 v ss c3 www.datasheet.co.kr datasheet pdf - http://www..net/
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