mar. 2011. rev. 3.0 copyright@ semipower electronic technology co., ltd. all rights reserved. sw sw 9 9 n n 90 90 features high ruggedness r ds(on) (max 1.45 ? )@v gs =10v gate charge (typ 60nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. it is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. n-channel mosfet absolute maximum ratings symbol parameter SW9N90 unit to-3p v dss drain to source voltage 900 v i d continuous drain current (@t c =25 o c) 9.0 a continuous drain current (@t c =100 o c) 5.6 a i dm drain current pulsed (note 1) 36 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 850 mj e ar repetitive avalanche energy (note 1) 25 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation (@t c =25 o c) 240 w derating factor above 25 o c 1.92 w/ o c t stg , t j operating junction temperat ure & storage temperature -55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit min. typ. max. r thjc thermal resistance, junction to case 0.52 o c/w r thcs thermal resistance, case to sink 0.24 o c/w r thja thermal resistance, junction to ambient 40 o c/w 1/7 bv dss : 900v i d : 9.0a r ds(on) : 1.45ohm 1 2 3 1. gate 2. drain 3. source to-3p samwin 1 2 3
5.0 3.0 i 2/7 copyright@ semipower electronic technology co., ltd. all rights reserved. electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 900 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 1.0 - v/ o c i dss drain to source leakage current v ds =900v, v gs =0v - - 10 ua v ds =720v, t c =125 o c - - 100 ua gss gate to source leak age current, forward v gs =30v, v ds =0v - - 100 na v gs =-30v, v ds =0v - - -100 na gate to source leak age current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua - v r ds(on) drain to source on state resistance v gs =10v, i d = 4.5a 1.1 1.45 ? dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 2700 pf c oss output capacitance 260 c rss reverse transfer capacitance 35 t d(on) turn on delay time v ds =450v, i d =9a, r g =50 ? 100 ns tr rising time 210 t d(off) turn off delay time 280 t f fall time 170 q g total gate charge v ds =720v, v gs =10v, i d =9a 60 72 nc q gs gate-source charge 12 - q gd gate-drain charge 26 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p-n junction diode in the mosfet - - 9 a i sm pulsed source current - - 36 a v sd diode forward voltage drop. i s =9a, v gs =0v - - 1.5 v t rr reverse recovery time i s =9a, v gs =0v, di f /dt=100a/us - 720 - ns q rr breakdown voltage temperature - 7.6 - uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 23mh, i as = 9.0a, v dd = 50v, r g =25 ? , starting t j = 25 o c 3. i sd 9.0a, di/dt = 300a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. sw sw 9 9 n n 90 90 samwin
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 1. on-state characteristics fig. 2. transfer characteristics fig. 3. on-resistance variation vs. drain current and gate voltage fig. 5. capacitance characteristics (non-repetitive) fig. 6. gate charge characteristics fig. 4. on state current vs. diode forward voltage 3/7 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : ? 1. 250 s pulse test 2. t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 50v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 1.0 1.5 2.0 2.5 3.0 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : ? 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 1020304050 0 2 4 6 8 10 12 v ds = 450v v ds = 180v v ds = 720v note : i ? d = 9a v gs , gate-source voltage [v] q g , total gate charge [nc] sw sw 9 9 n n 90 90 samwin
4/7 copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 9. maximum drain current vs. case temperature. fig. 8. on resistance variation vs. junction temperature fig. 10. maximum safe operating area fig. 11. transient thermal response curve fig 7. breakdown voltage variation vs. junction temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : ? 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : ? 1. v gs = 10 v 2. i d = 4.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : ? 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ ] ? 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : ? 1. z jc (t) = 0.45 /w max. ? 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 sw sw 9 9 n n 90 90 samwin
copyright@ semipower electronic technology co., ltd. all rights reserved. v ds same type as dut dut v gs 1ma q g q gs q gd v gs charge v dd dut v ds r l r g 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f v dd dut v ds l r g 10v in i as t p time i d(t) bv dss i as v ds(t) eas = l x i as 2 x bv dss -v dd bv dss 2 1 fig. 12. gate charge test circuit & waveform fig. 13. switching time test circuit & waveform fig. 14. unclamped inductive switching test circuit & waveform 5/7 sw sw 9 9 n n 90 90 samwin
6/7 copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 15. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v v gs gs (driver) (driver) i i s s (dut) (dut) v v ds ds (dut) (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd sw sw 9 9 n n 90 90 samwin
copyright@ semipower electronic technology co., ltd. all rights reserved. SW9N90 samwin revision history revision no. changed characteristics responsible date issuer rev 1.0 origination, first release alice nie 2007.12.05 xzq rev 2.0 updated the format of datasheet and added order codes. alice nie 2011.03.24 xzq rev 3.0 confirmed the vth characteristic alice nie 2011.09.16 xzq ????? ? ? 25 ? mf6 029 - 88253717 029 - 88251977 ????? ??? a 2005 0755 - 83981818 0755 - 83476838 www.semipower.com.cn 7/7
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