june 2011 FDS89161 dual n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 1 www.fairchildsemi.com FDS89161 rev. c2 FDS89161 dual n-channel powertrench ? mosfet 100 v, 2.7 a, 105 m features ? max r ds(on) = 105 m at v gs = 10 v, i d = 2.7 a ? max r ds(on) = 171 m at v gs = 6 v, i d = 2.1 a ? high performance trench tech nology for extremely low r ds(on) ? high power and current handling capability in a widely used surface mount package ? 100% uil tested ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced power trench ? process that has been optimized for r ds(on) , switching performance and ruggedness . applications ? synchronous rectifier ? primary switch for bridge topology q2 q1 q2 q1 g2 s1 g1 s2 d2 d2 d1 d1 5 6 7 8 3 2 1 4 pin 1 so-8 d1 d1 d2 d2 s2 s1 g1 g2 mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 100 v v gs gate to source voltage 20 v i d drain current -continuous 2.7 a -pulsed 15 e as single pulse avalanche energy (note 3) 13 mj p d power dissipation t c = 25 c 31 w power dissipation t a = 25 c (note1a) 1.6 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (note 1) 4.0 c/w r ja thermal resistance, junction to ambient (note 1a) 78 device marking device package reel size tape width quantity FDS89161 FDS89161 so-8 13 ?? 12 mm 2500 units
FDS89161 dual n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 2 www.fairchildsemi.com FDS89161 rev. c2 electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 100 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 67 mv/c i dss zero gate voltage drain current v ds = 80 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a234v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -9 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 2.7 a 86 105 m v gs = 6 v, i d = 2.1 a 120 171 v gs = 10 v, i d = 2.7 a, t j = 125 c 144 176 g fs forward transconductance v ds = 10 v, i d = 2.7 a 5 s c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1mhz 158 210 pf c oss output capacitance 43 58 pf c rss reverse transfer capacitance 3 5 pf r g gate resistance 1 t d(on) turn-on delay time v dd = 50 v, i d = 2.7 a, v gs = 10 v, r gen = 6 4.2 10 ns t r rise time 1.3 10 ns t d(off) turn-off delay time 7.3 15 ns t f fall time 1.9 10 ns q g(tot) total gate charge v gs = 0 v to 10 v v dd = 50 v, i d = 2.7 a 34.1nc q g(tot) total gate charge v gs = 0 v to 5 v 1.7 2.4 q gs gate to source charge 0.8 nc q gd gate to drain ?miller? charge 0.8 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2.7 a (note 2) 0.85 1.3 v v gs = 0 v, i s = 2 a (note 2) 0.82 1.2 t rr reverse recovery time i f = 2.7 a, di/dt = 100 a/ s 34 54 ns q rr reverse recovery charge 21 34 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. starting t j = 25c, l = 3 mh, i as = 3 a, v dd = 100 v, v gs = 10 v. b) 135c/w when mounted on a minimun pad a) 78c/w when mounted on a 1 in 2 pad of 2 oz copper
FDS89161 dual n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 3 www.fairchildsemi.com FDS89161 rev. c2 typical characteristics ( n-channel) t j = 25c unless otherwise noted figure 1. 01234 0 3 6 9 12 15 v gs = 5 v v gs = 7 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 6 v v gs = 5.5 v v gs = 10 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 03691215 0 1 2 3 4 v gs = 5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 5.5 v v gs = 6 v v gs = 7 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i d = 2.7 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 45678910 0 100 200 300 400 500 t j = 125 o c i d = 2.7 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 23456789 0 3 6 9 12 15 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 20 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDS89161 dual n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 4 www.fairchildsemi.com FDS89161 rev. c2 figure 7. 01234 0 2 4 6 8 10 i d = 2.7 a v dd = 50 v v dd = 25 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 65 v gate charge characteristics figure 8. 0.1 1 10 100 1 10 100 300 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 2 1.0 1.5 2.0 2.5 3.0 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 1 2 3 v gs = 6 v r t ja = 78 o c/w v gs = 10 v i d , drain current (a) t a , ambient temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs ambient temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op erating area 0.1 1 10 100 400 0.005 0.01 0.1 1 10 20 10 s 100 us 10 ms dc 1 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 135 o c/w t a = 25 o c figure 12. 10 -4 10 -3 10 -2 10 -1 11010 2 10 3 0.5 1 10 100 700 single pulse r t ja = 135 o c/w t c = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics ( n-channel) t j = 25c unless otherwise noted
FDS89161 dual n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 5 www.fairchildsemi.com FDS89161 rev. c2 figure 13. 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 2 single pulse r t ja = 135 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a junction-to-ambient transient thermal response curve typical characteristics ( n-channel) t j = 25c unless otherwise noted
FDS89161 dual n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 6 www.fairchildsemi.com FDS89161 rev. c2 anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. ? 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