mixers - double-balanced - chip 4 4 - 36 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc260 gaas mmic fundamental mixer, 14 - 26 ghz v04.1007 general description features functional diagram passive: no dc bias required input ip3: +20 dbm lo/rf isolation: 39 db small size: 1.0 x 0.55 x 0.1 mm electrical specifi cations, t a = +25 c typical applications the hmc260 is ideal for: ? point-to-point radios ? point-to-multi-point radios *unless otherwise noted, all measurements performed as downconverter, if= 1 ghz. the hmc260 is a passive double balanced mixer that can be used as an upconverter or downconverter between 14 and 26 ghz. the miniature monolithic mixer (mmic) requires no external components or matching circuitry. the hmc260 provides excellent lo to rf and lo to if suppression due to optimized balun structures. the mixer operates with lo drive levels above +9 dbm. measurements were made with the chip mounted and bonded into in a 50 ohm test fi xture. data includes the parasitic effects of wire bond assembly. connections were made with a 3 mil rib- bon bond with minimal length (<12 mil). parameter lo = +13 dbm, if = 1 ghz units min. typ. max. frequency range, rf & lo 14 - 26 ghz frequency range, if dc - 8 ghz conversion loss 7. 5 10. 5 d b noise figure (ssb) 7. 5 10. 5 d b lo to rf isolation 30 39 db lo to if isolation 25 35 db rf to if isolation 18 25 db ip3 (input) 13 20 dbm ip2 (input) 45 55 dbm 1 db gain compression (input) 6 11 dbm
mixers - double-balanced - chip 4 4 - 37 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. temperature @ lo = +13 dbm conversion gain vs. lo drive isolation @ lo = +13 dbm if bandwidth @ lo = +13 dbm return loss @ lo = +13 dbm upconverter performance conversion gain @ lo = +13 dbm -15 -12 -9 -6 -3 0 12 14 16 18 20 22 24 26 + 25 c + 85 c - 55 c conversion gain (db) frequency (ghz) -25 -20 -15 -10 -5 0 12 14 16 18 20 22 24 26 lo rf returnloss (db) frequency (ghz) -20 -16 -12 -8 -4 0 12 14 16 18 20 22 24 26 conversion gain (db) frequency (ghz) -20 -16 -12 -8 -4 0 024681012 if return loss conversion gain response (db) frequency (ghz) -15 -12 -9 -6 -3 0 12 14 16 18 20 22 24 26 +9 dbm +11 dbm +13 dbm +15 dbm conversion gain (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 12 14 16 18 20 22 24 26 rf/if lo/rf lo/if isolation (db) frequency (ghz) hmc260 v04.1007 gaas mmic fundamental mixer, 14 - 26 ghz
mixers - double-balanced - chip 4 4 - 38 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mxn spurious outputs input ip2 vs. temperature @ lo = +13 dbm * input ip3 vs. lo drive * input ip3 vs. temperature @ lo = +13 dbm * input ip2 vs. lo drive * * two-tone input power = -5 dbm each tone, 1 mhz spacing. input p1db vs. temperature @ lo = +13 dbm nlo mrf01234 0 xx 9 19 xx xx 12004637xx 26472688295 3xx92998394 4 x x x x 102 >110 >110 rf = 21 ghz @ -10 dbm lo = 22 ghz @ +13 dbm all values in dbc below the if output power level. 40 50 60 70 80 90 100 14 16 18 20 22 24 26 + 25 c + 85 c - 55 c ip2 (dbm) lo frequency (ghz) 6 8 10 12 14 16 14 15 16 17 18 19 20 21 22 23 24 25 26 + 25 c + 85 c - 55 c p1db (dbm) frequency (ghz) 40 50 60 70 80 90 100 14 16 18 20 22 24 26 +11 dbm +13 dbm +15 dbm ip2 (dbm) lo frequency (ghz) 0 5 10 15 20 25 14 16 18 20 22 24 26 + 25 c + 85 c - 55 c ip3 (dbm) lo frequency (ghz) 0 5 10 15 20 25 14 16 18 20 22 24 26 +11 dbm +13 dbm +15 dbm ip3 (dbm) lo frequency (ghz) hmc260 v04.1007 gaas mmic fundamental mixer, 14 - 26 ghz
mixers - double-balanced - chip 4 4 - 39 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings rf / if input +15 dbm lo drive +27 dbm storage temperature -65 to +150 c operating temperature -55 to +85 c if dc current 4 ma esd sensitivity (hbm) class 1a notes: 1. all dimensions are in inches [mm]. 2. die thickness is .004. 3. typical bond pad is .004 square. 4. bond pad spacing center to center is .006. 5. backside metallization: gold. 6. bond pad metallization: gold. 7. backside metal is ground. 8. connection not required for unlabeled bond pads. die packaging information [1] standard alternate gp-5 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. electrostatic sensitive device observe handling precautions hmc260 v04.1007 gaas mmic fundamental mixer, 14 - 26 ghz
mixers - double-balanced - chip 4 4 - 40 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1lo this pin is dc coupled and matched to 50 ohms. 2rf this pin is dc coupled and matched to 50 ohms. 3if this pin is dc coupled. for applications not requiring operation to dc this port should be dc blocked externally using a series capacitor. choose value of capacitor to pass if frequency desired. for operation to dc, this pin must not sink/source more than 40 ma of current or failure may result. die bottom gnd this pin must be connected to rf ground. pad descriptions hmc260 v04.1007 gaas mmic fundamental mixer, 14 - 26 ghz
mixers - double-balanced - chip 4 4 - 41 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mount ing surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possib le, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc260 v04.1007 gaas mmic fundamental mixer, 14 - 26 ghz
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