?005 fairchild semiconductor corporation 1 www.fairchildsemi.com f ebruary 2005 RMPA1765 rev. c RMPA1765 k-pcs, cdma, cdma2000-1x and wcdma power edge power ampli?r module RMPA1765 k-pcs, cdma, cdma2000-1x and wcdma po wer edge power ampli?r module features single positive-supply operation and low power and shutdown modes 38% cdma/wcdma ef?iency at +28 dbm average output power compact lead-free compliant lcc package- 3.0 x 3.0 x 1.0 mm with industry standard pinout internally matched to 50 ohms and dc blocked rf input/output. meets cdma2000-1xrtt/wcdma performance require- ments general description the RMPA1765 power ampli?r module (pam) is designed for k orean cdma, cdma2000-1x and wcdma personal commu- nications system (pcs) applications. the 2 stage pam is inter- nally matched to 50 ohms to minimize the use of external components and features a low-power mode to reduce standby current and dc power consumption during peak phone usage. high power-added ef?iency and excellent linearity are achieved using fairchild rf s ingap heterojunction bipolar tr ansistor (hbt) process. device functional block diagram (top view) pa module (paddle ground on package bottom) 4 3 2 1 8 7 6 5 dc bias control input match output match vcc2 rf out gnd vref rf in vcc1 mmic vmode gnd
2 www.fairchildsemi.com RMPA1765 rev. c RMPA1765 k-pcs, cdma, cdma2000-1x and wcdma power edge power ampli?r module absolute ratings 1 note: 1. no permanent damage with one parameter set at extreme limit. other parameters set to typical values. electrical characteristics 1 notes: 1. all parameters met at tc = +25?, vcc = +3.4v, vref = 2.85v, f = 1750 mhz and load vswr 1.2:1, unless otherwise noted. 2. all phase angles. 3. guaranteed by design. p arameter symbol value units supply voltages vcc1, vcc2 5.0 v reference voltage vref 2.6 to 3.5 v po w er control voltage vmode 3.5 v rf input power pin +10 dbm storage temperature tstg -55 to +150 ? p arameter symbol min typ max units comments operating frequency f 1720 1780 mhz cdma operation small-signal gain ssg 26 db po = 0 dbm po w er gain gp 28 db po = +28 dbm; vmode = 0v 26 db po = +16 dbm; vmode = 2.0v linear output power po 28 dbm vmode = 0v 16 dbm vmode 2.0v p aed (digital) @ +28 dbm paed 38 % vmode = 0v p aed (digital) @ +16 dbm 9 % vmode 2.0v p aed (digital) @ +16 dbm 25 % vmode 2.0v, vcc = 1.4 v high power total current itot 490 ma po = +28 dbm, vmode = 0v low power total current 130 ma po = +16 dbm, vmode = 2.0v adjacent channel power ratio ?.25 mhz offset acpr1 -50 dbc po = +28 dbm; vmode = 0v -52 dbc po = +16 dbm; vmode = 2v ?.25 mhz offset acpr2 -60 dbc po = +28 dbm; vmode = 0v, is-95 -68 dbc po = +16 dbm; vmode = 2v general characteristics input impedance vswr 2.0:1 noise figure nf 4 db receive band noise power rx no -139 dbm/hz po +28 dbm; 1840 to 1870 mhz harmonic suppression 2fo-5fo -30 dbc po +28 dbm spurious outputs 2, 3 s -60 dbc load vswr 5.0:1 ruggedness w/ load mismatch 3 10:1 no permanent damage. case operating temperature tc -30 85 ? dc characteristics quiescent current iccq 45 ma vmode 2.0v reference current iref 5 8 ma po < +28 dbm shutdown leakage current icc(off) 1 5 ? no applied rf signal.
3 www.fairchildsemi.com RMPA1765 rev. c RMPA1765 k-pcs, cdma, cdma2000-1x and wcdma power edge power ampli?r module p erformance data RMPA1765 k-pcs 3x3mm 2 pam vcc=3.4v, vref = 2.85v, vmode=0v, pout=28dbm 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 1720 1740 1760 1780 frequency (mhz) gain (db) RMPA1765 k-pcs 3x3mm 2 pam vcc=3.4v, vref = 2.85v, vmode=0v, pout=28dbm 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 1720 1740 1760 1780 frequency (mhz) pae (%) RMPA1765 k-pcs 3x3mm 2 pam vcc=3.4v, vref = 2.85v, vmode=0v, pout=28dbm -60.0 -58.0 -56.0 -54.0 -52.0 -50.0 -48.0 -46.0 -44.0 -42.0 -40.0 1720 1740 1760 1780 frequency (mhz) acpr1 (dbc) RMPA1765 k-pcs 3x3mm 2 pam vcc=3.4v, vref = 2.85v, vmode=0v, pout=28dbm -70.0 -68.0 -66.0 -64.0 -62.0 -60.0 -58.0 -56.0 -54.0 -52.0 -50.0 1720 1740 1760 1780 frequency (mhz) acpr2 (dbc)
4 www.fairchildsemi.com RMPA1765 rev. c RMPA1765 k-pcs, cdma, cdma2000-1x and wcdma power edge power ampli?r module ef?iency improvement applications in addition to high-power/low-power bias modes, the ef?iency of the pa module can be signi?antly increased at backed-off rf power levels by dynamically varying the supply voltage (vcc) applied to the ampli?r. since mobile handsets and power ampli?rs fre- quently operate at 10-20 db back-off, or more, from maximum rated linear power, battery life is highly dependent on the dc powe r consumed at antenna power levels in the range of 0 to +16dbm. the reduced demand on transmitted rf power allows the pa supply v oltage to be reduced for improved ef?iency, while still meeting linearity requirements for cdma modulation with excellent mar gin. high-ef?iency dc-dc converters are now available to implement switched-voltage operation. with the pa module in low-power mode (vmode = +2.0v) at+16dbm output power and supply voltages reduced from 3.4v nominal down to 1.2v, power-added ef?iency is more than doubled from 9.5 percent to nearly 25 percent (vcc = 1.2v) while maintaining a typical acpr1 of ?2dbc and acpr2 of less than ?1dbc. operation at even lower levels of vcc supply voltage are possible with a further restriction on the maximum rf output power. recommended operating conditions dc turn-on sequence 1) vcc1 = vcc2 = 3.4v (typical) 2) vref = 2.85v (typical) 3) high-power: vmode = 0v (pout > 16 dbm) low-power: vmode = 2v (pout < 16 dbm) p arameter symbol min typical max units operating frequency f 1720 1780 mhz supply voltage vcc1, vcc2 3.0 3.4 4.2 v reference voltage (operating) vref 2.7 2.85 3.1 v (shutdown) 0 0.5 v bias control voltage (low-power) vmode 1.8 2.0 3.0 v (high-power) 0 0.5 v linear output power (high-power) pout +28 dbm (low-power) +16 dbm case operating temperature tc -30 +85 ?
5 www.fairchildsemi.com RMPA1765 rev. c RMPA1765 k-pcs, cdma, cdma2000-1x and wcdma power edge power ampli?r module evaluation board layout materials list evaluation board schematic qty item no. part number description vendor 11 g657691-1 v1 pc board fairchild 22 #142-0701-841 sma connector johnson 73 #2340-5211tn terminals 3m ref 4 assembly, RMPA1765 fairchild 35 grm39x7r102k50v 1000pf capacitor (0603) murata 35 (alt) ecj-1vb1h102k 1000pf capacitor (0603) panasonic 26 c3216x5r1a335m 3.3? capacitor (1206) tdk 17 grm39y5v104z16v 0.1? capacitor (0603) murata 17 (alt) ecj-1vb1c104k 0.1? capacitor (0603) panasonic a/r 8 sn63 solder paste indium corp. a/r 9 sn96 solder paste indium corp. 1 5 6 3 6 5 2 4 5 7 xytt 1765 z f sma1 rf in vcc2 (package base) vcc1 3.3 f 3.3 1000 pf 1000 pf 1000 pf 0.1 f vmode sma2 rf out vref 2 8 3 9 4 1 5, 6 7 50 ohm trl 50 ohm trl xytt 1765 z
6 www.fairchildsemi.com RMPA1765 rev. c RMPA1765 k-pcs, cdma, cdma2000-1x and wcdma power edge power ampli?r module pa ck ag e outline signal descriptions pin # signal name description 1 vcc1 supply voltage to input stage reference voltage 2 rf in rf input signal 3 vmode high-power/low-power mode control 4 vref reference voltage 5 gnd ground 6 gnd ground 7 rf out rf output signal 8 vcc2 supply voltage to output stage z xytt 1765 z xytt 1765 top view front view bottom view i/o 1 indicator 1 2 3 3.00 1.10mm max. 4x r.25mm 2.60mm 0.20mm 0.40mm 0.40mm 0.40mm 0.10mm 0.10mm detail a typ. back side solder mask see detail a 1.00mm 1.00mm mm sq. +.100 ?050 4 4 3 2 2 1 1 5 6 7 8 8 7 6 5 9
7 www.fairchildsemi.com RMPA1765 rev. c RMPA1765 k-pcs, cdma, cdma2000-1x and wcdma power edge power ampli?r module application information caution: this is an esd sensitive device precautions to avoid permanent device damage: cleanliness: observe proper handling procedures to ensure clean devices and pcbs. devices should remain in their original packaging until component placement to ensure no contamination or damage to rf, dc & ground contact areas. device cleaning: standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. static sensitivity: follow esd precautions to protect against esd damage: ? properly grounded static-dissipative surface on which to place devices. static-dissipative floor or mat. ? properly grounded conductive wrist strap for each person to wear while handling devices. general handling: handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. avoiding damaging the rf, dc, & ground contacts on the package bottom. do not apply excessive pressure to the top of the lid. device storage: devices are supplied in heat-sealed, moisture-barrier bags. in this condition, devices are protected and require no special storage conditions. once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. ? e vice usage: fairchild recommends the following proce- dures prior to assembly. dry-bake devices at 125? for 24 hours minimum. note: the shipping trays cannot withstand 125? baking temperature. assemble the dry-baked devices within 7 days of removal from the oven. during the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30? if the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. solder materials & temperature profile: reflow soldering is the preferred method of smt attachment. hand soldering is not recommended. reflow profile ramp-up: during this stage the solvents are evaporated from the solder paste. care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. a typical heating rate is 1- 2?/sec. pre-heat/soak: the soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. the recommended soak condition is: 120-150 seconds at 150?. reflow zone: if the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. reflow must occur prior to the flux being completely driven off. the duration of peak reflow temperature should not exceed 10 seconds. maximum soldering temperatures should be in the range 215-220?, with a maximum limit of 225?. cooling zone: steep thermal gradients may give rise to excessive thermal shock. however, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. the illustration below indicates the recommended soldering profile. solder joint characteristics: proper operation of this device depends on a reliable void-free attachment of the heatsink to the pwb. the solder joint should be 95% void-free and be a consistent thickness. rework considerations: rework of a device attached to a board is limited to reflow of the solder with a heat gun. the device should not be subjected to more than 225? and reflow solder in the molten state for more than 5 seconds. no more than 2 rework operations should be performed. recommended solder re?w pro?e 0 20 40 60 80 100 120 140 deg ( c) time (sec) 10 sec 183 c 1 c/sec 1 c/sec soak at 150 c for 60 sec 45 sec (max) above 183 c 160 180 200 220 240 060 120 180 240 300
8 www.fairchildsemi.com RMPA1765 rev. c RMPA1765 k-pcs, cdma, cdma2000-1x and wcdma power edge power ampli?r module disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy f airchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? p acman? f ast ? f astr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i15 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? f act? f act quiet series? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? s tealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? across the board. around the world.? the power franchise ? programmable active droop?
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