silicon epitaxial npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. s ss semelab limited emelab limited emelab limited emelab limited coventry road, lutterworth, leicestershire, le17 4j b telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8123 issue 2 page 1 of 3 BC109CSM ? hermetic ceramic surface mount package ? designed for low noise general purpose amplifiers, driver stages and signal processing applications ? screening options available absolute maximum ratings (t a = 25c unless otherwise stated) v cbo collector ? base voltage 30v v ceo collector ? emitter voltage 20v v ebo emitter ? base voltage 5v i c continuous collector current 100ma i cm peak collector current 200ma p d total power dissipation at t a = 25c 300mw derate above 25c 2mw/c t c = 25c 750mw derate above 25c 5mw/c t j junction temperature range -65 to +175c t stg storage temperature range -65 to +175c thermal properties symbols parameters min. typ. max. units r ja thermal resistance, junction to ambient 500 c/w r jc thermal resistance, junction to case 200 c/w
silicon epitaxial npn transistor BC109CSM semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4j b telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8123 issue 2 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v cb = 20v 15 na i cbo collector-cut-off current t a = 150c 15 a v (br)cbo collector-base breakdown voltage i c = 10a 30 v (br)ceo (1) collector-emitter breakdown voltage i c = 10ma 20 v (br)ebo emitter-base breakdown voltage i e = 10a 5 v i c = 2ma v ce = 5v 550 700 v be (1) base-emitter voltage i c = 10ma v ce = 5v 700 i c = 10ma i b = 0.5ma 250 v ce(sat) (1) collector-emitter saturation voltage i c = 100ma i b = 5ma 600 i c = 10ma i b = 0.5ma 750 v be(sat) (1) base-emitter saturation voltage i c = 100ma i b = 5ma 900 mv h fe (1) i c = 2ma v ce = 5v 200 800 forward-current transfer ratio i c = 10a v ce = 5v 40 dynamic characteristics i c = 10ma v ce = 5v f t transition frequency f = 100mhz 150 mhz i c = 2ma v ce = 5v h fe small-signal current gain f = 1.0khz 240 900 v cb = 10v i e = 0 c obo output capacitance f = 1.0mhz 6 pf v eb = 0.5v i c = 0 c ibo input capacitance f = 1.0mhz 12 pf notes notes notes notes (1) pulse width 300us, 2%
silicon epitaxial npn transistor BC109CSM semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4j b telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8123 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) lcc1 underside view pad 1 - base pad 2 - emitter pad 3 - collector 2 1 0.51 0.10 (0.02 0.004) 0.31 (0.012) 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) 2 . 54 0 . 13 ( 0 . 10 0 . 005 ) 0 . 76 0 . 15 ( 0 . 03 0 . 006 ) 1.02 0.10 (0.04 0.004) 1.40 (0.055) max. a 0.31 (0.012) rad. rad. a = 3
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