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this document states the current technical specifications regarding the spansion product(s) described herein. the preliminary s tatus of this document indicates that product qual- ification has been completed, and that initial production has begun. due to the phases of the manufacturing process that requir e maintaining efficiency and quality, this document may be revised by subsequent versions or modifications due to changes in technical specifications. publication number s29cd016j-cl016j_kgd_sp revision a amendment 3 issue date march 9, 2009 general description the spansion s29cd016j and s29cl016j devices are floating ga te products fabricated in 110 nm process technology. these burst mode flash devices are capable of performing simu ltaneous read and write operations with zero latency on two separate banks. these products can oper ate up to 56 mhz and use a single v cc of 2.5 v to 2.75 v (s29 cd-j) or 3.0 v to 3.6 v (s29cl-j) that make them ideal for today?s demanding automotive applications. distinctive characteristics ? single 2.6 v (s29cd-j) or 3.3 v (s29cl-j) for read/program/ erase ? 110 nm floating gate technology ? simultaneous read/write operation with zero latency ? x32 data bus ? dual boot sector configuration (top and bottom) ? flexible sector architecture ? cd016j & cl016j: eight 2k double word, thirty-two 16k double word, and eight 2k double word sectors ? versatilei/o? control (1.65 v to v cc ) ? programmable burst interface ? linear for 2, 4, and 8 double word burst with wrap around ? secured silicon sector that can be either factory or customer locked ? 20 year data retention (typical) ? cycling endurance: 1,000,000 write cycles per sector (typical) ? command set compatible with jecec (jc42.4) standard ? supports common flash interface (cfi) ? persistent and password methods of advanced sector protection ? unlock bypass program command to reduce programming time ? write operation status bits indicate program and erase operation completion ? hardware (wp#) protection of two outermost sectors in the large bank ? ready/busy (ry/by#) output indicates data available to system ? suspend and resume commands for program and erase operation performance characteristics s29cd016j/s29cl016j known good die 16 megabit (512k x 32-bit) cmos 2.6 or 3.3 volt-only burst mode, dual boot, si multaneous read/write flash memory with versatilei/o ? supplement (preliminary) read access times speed option (mhz) 56 40 max asynch. access time, ns (t acc )5454 max synch. latency, ns (t iacc )5454 max synch. burst access, ns (t bacc )88 max ce# access time, ns (t ce )5454 max oe# access time, ns (t oe )2020 current consumption (max values) continuous burst read @ 56 mhz 90 ma program 50 ma erase 50 ma standby mode 60 a typical program and erase times double word programming 18 s sector erase 1.0 s
2 s29cd016j/s29cl016j known good die revision a3 march 9, 2009 supplement (preliminary) table of contents general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 distinctive characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 performance characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 s29cd/cl016j features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1. die photograph . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2. die pad locations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3. pad description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4. ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.1 valid combinations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5. packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.1 surftape packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.2 waffle pack packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6. product test flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7. absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 8. operating ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 9. physical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 10. manufacturin g information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 11. special handli ng instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 11.1 processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 11.2 storage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12. dc characteristics for kgd devices at 145c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13. terms and conditions of sale for spansion non-volatile memory die . . . . . . . . . . . . . . . . . . . . . 14 14. revision summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 list of figures figure 6.1 spansion kgd product test flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 7.1 maximum negative overshoot waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 7.2 maximum positive overshoot wavefo rm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 list of tables table 3.1 pads relative to die center . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 table 12.1 dc characteristics, cmos compatible . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
march 9, 2009 revision a3 s29cd016j/s29cl016j known good die 3 supplement (preliminary) s29cd/cl016j features the s29cd016j & s29cl016j flash devices are burst mode, dual boot, simultaneous read/write flash memories with versatilei/o? manufact ured on 110 nm process technology. the s29cd016j is a 16 megabit, 2.6 vo lt-only, single-power-supply, burst mode flash memory device that can be configured for 524,288 double words. the s29cl016j is the 3.3 volt-only version of that device. both devices can be programmed in standard eprom programmers. to eliminate bus contention, each device has separate chip enable (ce#), write enable (we#) and output enable (oe#) controls. additional control inputs are required for synchronous bu rst operations: load burst address valid (adv#), and clock (clk). each device requires only a single 2.6 volt-only (2.50 v ? 2.75 v) or 3.3 volt-only (3.00 v ? 3.60 v) for both read and write functions. a 12.0-volt v pp is not required for program or erase operations, although an acceleration pin is available if faster programming performance is required. the device is entirely command set compatible wit h the jedec single-power-su pply flash standard. the software command set is compatible with the comm and sets of the 5 v am29f and 3 v am29lv flash families. commands are written to the command register using standar d micro-processor write timing. register contents serve as inputs to an internal state-machine that controls the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase operations. reading data out of the device is sim ilar to reading from other flash or eprom devices. the unlock bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. the simultaneous read/write architecture provides simultaneous operation by dividing the memory space into two banks. the device can begin programming or erasing in one bank, and then simultaneously read from the other bank, with zero latency. this releases the system from waiting for the completion of program or erase operations. the device provides a 256-byte secured silicon sector with an one-time-programmable (otp) mechanism. in addition, the device features several levels of se ctor protection, which can disable both the program and erase operations in certain sectors or sector groups: persistent sector protection is a command sector protection method that re places the old 12 v controlled protection method; password sector protection is a highly sophisticated protection method that requires a password before changes to certain sectors or sector groups are permitted; wp# hardware protection prevents program or erase in the two outermost 8 kbytes sectors of the larger bank. the device defaults to the persist ent sector protection mode. the cu stomer must then choose if the standard or password protection method is most desira ble. the wp# hardware protection feature is always available, independent of the ot her protection method chosen. the versatilei/o? (v io ) feature allows the output voltage generated on the device to be determined based on the v ? level. this feature allows this device to operat e in the 1.8 v i/o environment, driving and receiving signals to and from other 1.8 v devices on the same bus. the host system can detect wh ether a program or erase operation is co mplete by observing the ry/by# pin, by reading the dq7 (data# polling), or dq6 (toggle) status bits . after a program or erase cycle has been completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. hardware data protection measures include a low v cc detector that automatically inhibits write operations during power transitions. the password and software sector protection feature disables both program and erase operations in any combinat ion of sectors of memory. this can be achieved in-system at v cc level. the program/erase suspend/erase resume feature enables the user to put erase on hold for any period of time to read data from, or program dat a to, any sector that is not select ed for erasure. true background erase can thus be achieved. the hardware reset# pin terminates any operation in progress and resets the internal state machine to reading array data.
4 s29cd016j/s29cl016j known good die revision a3 march 9, 2009 supplement (preliminary) the device offers two power-saving features. when add resses have been stable for a specified amount of time, the device enters the automatic sleep mode . the system can also place the device into the standby mode . power consumption is greatly reduced in both these modes. spansion flash technology combines years of flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. the device electric ally erases all bits within a sector simultaneously via fowler-nordheim tunnelling. the data is programmed using hot electron injection. 0.0.0.1 electrical specifications refer to the s29cd-j & s29cl-j flash family data s heet, publication number s29cd-j_cl-j_00, for full electrical specifications on the s29cd032j/s29cl032j in kgd form. 1. die photograph
march 9, 2009 revision a3 s29cd016j/s29cl016j known good die 5 supplement (preliminary) 2. die pad locations 15 10 20 25 30 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 x y 1 70 5 74 7 8 69 55 60 65 45 47 50 logo 40 35 31 15 10 20 25 30 15 10 20 25 30 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 x y 1 70 5 74 7 8 69 55 60 65 45 47 50 logo 40 35 31 15 10 20 25 30 15 10 20 25 30 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 x y 1 70 5 74 7 8 69 55 60 65 45 47 50 logo 40 35 31 15 10 20 25 30 15 10 20 25 30 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 x y 1 70 5 74 7 8 69 55 60 65 45 47 50 logo 40 35 31
6 s29cd016j/s29cl016j known good die revision a3 march 9, 2009 supplement (preliminary) 3. pad description table 3.1 pads relative to die center (sheet 1 of 2) pad description ? coordinates are relative to die center pad signal mils m xyxy 1v ss 87.381 3.347 2219.485 85.016 2v cc 87.381 8.031 2219.485 203.994 3 ce# 87.381 12.892 2219.485 327.456 4 oe# 87.381 17.556 2219.485 445.921 5 we# 87.381 22.22 2219.485 564.386 6 wp# 87.381 27.039 2219.485 686.793 7 ind/wait# 88.346 39.741 2243.986 1009.432 8 dq16 70.562 46.96 1792.27 1192.773 9 dq17 65.797 46.96 1671.24 1192.773 10 dq18 57.691 46.96 1465.356 1192.773 11 dq19 52.926 46.96 1344.326 1192.773 12 v io 46.4 46.96 1178.57 1192.773 13 v ss 41.738 46.96 1060.153 1192.773 14 dq20 35.235 46.96 894.957 1192.773 15 dq21 30.47 46.96 773.927 1192.773 16 dq22 22.364 46.96 568.043 1192.773 17 dq23 17.599 46.96 447.013 1192.773 18 dq24 ?0.093 46.96 ?2.356 1192.773 19 dq25 ?4.858 46.96 ?123.386 1192.773 20 dq26 ?12.963 46.96 ?329.27 1192.773 21 dq27 ?17.728 46.96 ?450.3 1192.773 22 v io ?24.254 46.96 ?616.056 1192.773 23 v ss ?28.916 46.96 ?734.474 1192.773 24 dq28 ?35.42 46.96 ?899.669 1192.773 25 dq29 ?40.185 46.96 ?1020.699 1192.773 26 dq30 ?48.291 46.96 ?1226.583 1192.773 27 dq31 ?53.056 46.96 ?1347.613 1192.773 28 a0 ?69.006 49.02 ?1752.741 1245.108 29 a1 ?73.77 49.02 ?1873.771 1245.108 30 a2 ?78.333 49.02 ?1989.671 1245.108 31 a3 ?88.473 41.504 ?2247.216 1054.196 32 a4 ?88.473 36.941 ?2247.216 938.296 33 a5 ?88.473 32.176 ?2247.216 817.266 34 a6 ?88.473 27.613 ?2247.216 701.366 35 a7 ?88.473 22.848 ?2247.216 580.336 36 a8 ?88.473 18.285 ?2247.216 464.436 37 v ss ?88.473 13.402 ?2247.216 340.414 38 acc ?88.473 8.245 ?2247.216 209.418 39 v cc ?88.473 ?11.899 ?2247.216 ?302.224 40 a9 ?88.473 ?17 ?2247.216 ?431.794 41 a10 ?88.473 ?21.905 ?2247.216 ?556.387
march 9, 2009 revision a3 s29cd016j/s29cl016j known good die 7 supplement (preliminary) 42 a11 ?88.473 ?26.468 ?2247.216 ?672.287 43 a12 ?88.473 ?31.233 ?2247.216 ?793.317 44 a13 ?88.473 ?35.796 ?2247.216 ?909.217 45 a14 ?88.473 ?40.561 ?2247.216 ?1030.247 46 a15 ?88.473 ?45.124 ?2247.216 ?1146.147 47 a16 ?78.333 ?49.192 ?1989.671 ?1249.469 48 a17 ?73.77 ?49.192 ?1873.771 ?1249.469 49 a18 ?69.006 ?49.192 ?1752.741 ?1249.469 50 dq0 ?53.056 ?47.131 ?1347.613 ?1197.133 51 dq1 ?48.291 ?47.131 ?1226.583 ?1197.133 52 dq2 ?40.185 ?47.131 ?1020.699 ?1197.133 53 dq3 ?35.42 ?47.131 ?899.669 ?1197.133 54 v io ?28.894 ?47.131 ?733.913 ?1197.133 55 v ss ?24.232 ?47.131 ?615.496 ?1197.133 56 dq4 ?17.728 ?47.131 ?450.3 ?1197.133 57 dq5 ?12.963 ?47.131 ?329.27 ?1197.133 58 dq6 ?4.858 ?47.131 ?123.386 ?1197.133 59 dq7 ?0.093 ?47.131 ?2.356 ?1197.133 60 dq8 17.599 ?47.131 447.013 ?1197.133 61 dq9 22.364 ?47.131 568.043 ?1197.133 62 dq10 30.47 ?47.131 773.927 ?1197.133 63 dq11 35.235 ?47.131 894.957 ?1197.133 64 v io 41.76 ?47.131 1060.713 ?1197.133 65 v ss 46.422 ?47.131 1179.131 ?1197.133 66 dq12 52.926 ?47.131 1344.326 ?1197.133 67 dq13 57.691 ?47.131 1465.356 ?1197.133 68 dq14 65.797 ?47.131 1671.24 ?1197.133 69 dq15 70.562 ?47.131 1792.27 ?1197.133 70 v io 87.381 ?42.383 2219.485 ?1076.54 71 reset# 87.381 ?36.499 2219.485 ?927.067 72 clk 87.381 ?31.394 2219.485 ?797.402 73 ry/by# 88.346 ?19.018 2243.986 ?483.066 74 adv# 87.381 ?11.386 2219.485 ?289.199 table 3.1 pads relative to die center (sheet 2 of 2) pad description ? coordinates are relative to die center pad signal mils m xyxy
8 s29cd016j/s29cl016j known good die revision a3 march 9, 2009 supplement (preliminary) 4. ordering information the order number (valid combination) is formed by the following: 4.1 valid combinations valid combinations list configurations planned to be supported in volume for this device. consult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. s29cd016j s29cl016j 0j d g h 00 4 packing type 4 = surf tape (2500 per reel) 7 = waffle pack (42 per waffle pack tray) additional ordering options 15th character ? s29cd016j only: 0 = 7e, 08, 01/00 autoselect id 1 = 7e, 36, 01/00 autoselect id 15th character ? s29cl016j only: 0 = 7e, 46, 01/00 autoselect id 16th character ? top or bottom boot: 1 = bottom boot with simultaneous operation 3 = bottom boot with no simultaneous operation temperature range h = hot (?40 c to +145 c) die thickness g = 500 m package type d= die clock frequency 10th character - initial burst access delay 0 = 5-1-1-1, 6-1-1-1, and above 1 = 4-1-1-1 (40 mhz only) 11h character - frequency j = 40 mhz m = 56 mhz device number/description s29cd016j/s29cl016j 16 megabit (512k x 32-bit) cmos 2. 6 or 3.3 volt-only burst mode, dual boot, simultaneous read/write flash memory manufactured on 110 nm floating gate technology s29cl016j/s29cl016j valid combinations s29cd016j 0j, 1j, 0m d g h 01, 03, 11, 13 4, 7 s29cl016j 01, 03
march 9, 2009 revision a3 s29cd016j/s29cl016j known good die 9 supplement (preliminary) 5. packaging information 5.1 surftape packaging direction of feed 12 mm orientation relative to leading edge of tape and reel spansion logo location
10 s29cd016j/s29cl016j known good die revision a3 march 9, 2009 supplement (preliminary) 5.2 waffle pack packaging 6. product test flow figure 6.1 provides an overview of spansion?s known good di e test flow. for more detailed information, refer to the s29cd016j/s29cl016j product qualificatio n database. spansion implements quality assurance procedures throughout the product te st flow. these qa procedures also allow spansion to produce kgd products without requiring or implem enting burn-in. in addition, an off-li ne quality monitoring program (qmp) further guarantees spansion quality standar ds are met on known good die products. orientation relative to top-left corner of waffle pack cavity plate spansion logo location
march 9, 2009 revision a3 s29cd016j/s29cl016j known good die 11 supplement (preliminary) figure 6.1 spansion kgd product test flow electronic marking is programmed into every kgd for the purpose of traceability. the electronic marking contains wafer lot number, wafer number of origin, di e location on the wafer, mask revision, test program revision, test dates, and speed grade. figure 6.1 illustrates the steps where specific electronic marking information is programmed. for more information regarding electronic marking, reference the s29cd016j electronic marking data sheet supplement. wafer sort 1 bake 24 hours at 250c wafer sort 2 wafer sort 3 high temperature packaging for shipment shipment dc parameters functionality programmability erasability dc parameters functionality programmability erasability data retention dc parameters functionality programmability erasability speed incoming inspection wafer saw die separation 100% visual inspection die pack electronic marking step 1: wafer sort, test 1 & 2 information electronic marking step 2: final class or kgd test information & device speed
12 s29cd016j/s29cl016j known good die revision a3 march 9, 2009 supplement (preliminary) 7. absolute maximum ratings notes 1. minimum dc voltage on input or i/o pins is ?0.5 v. during voltage transitions, input at i/o pins may overshoot v ss to ?2.0 v for periods of up to 20 ns. see figure 7.1 . maximum dc voltage on output and i/o pins is 3.0 v. during voltage transitions output pins may overshoot to v cc + 2.0 v for periods up to 20 ns. see figure 9. 2. minimum dc input voltage on pins acc, a9, oe#, and reset# is ?0.5 v. during voltage transitions, a9, oe#, and reset# may overshoot v ss to ?2.0 v for periods of up to 20 ns. see figure 7.2 . maximum dc input voltage on pin a9 and oe# is +13.0 v which may overshoot to 13.7 v for periods up to 20 ns. 3. no more than one output may be shorted to ground at a time. duration of the short circuit should not be greater than one seco nd. 4. stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditio ns above those indicated in the operational sections of this d ata sheet is not implied. exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. figure 7.1 maximum negative overshoot waveform figure 7.2 maximum positive overshoot waveform 8. operating ranges note operating ranges define those limits between wh ich the functionality of the device is guaranteed. parameter rating storage temperature ?65c to +150c ambient temperature with power applied ?65c to +145c v cc , v io ( note 1 ) s29cd016j ?0.5 v to + 3.0 v v cc , v io ( note 1 ) s29cl016j ?0.5 v to + 3.6 v acc, a9 , oe# , and reset# ( note 2 ) ?0.5 v to +13.0 v address, data, control signals (with the exception of clk) ( note 1 ) ?0.5 v to +3.6 v all other pins ( note 1 ) ?0.5 v to +3.6 v output short circuit current ( note 3 )200 ma 20 n s 20 n s +0. 8 v ?0.5 v 20 n s ?2.0 v 20 n s 20 n s v cc +2.0 v v cc +0.5 v 20 n s 2.0 v parameter rating ambient temperature (t a ), hot range ?40c to +145c v cc supply voltage for regulated voltage range s29cd016j 2.5 v to 2.75 v s29cl016j 3.0 v to 3.6 v v io supply voltage 1.65 v to v cc
march 9, 2009 revision a3 s29cd016j/s29cl016j known good die 13 supplement (preliminary) 9. physical specifications 10. manufacturing information 11. special handling instructions 11.1 processing do not expose kgd products to ultrav iolet light or process them at temperatures greater than 250c. failure to adhere to these handling instruct ions will result in irreparable damage to the devices. for best yield, spansion recommends assembly in a class 10k clean room with 30% to 60% relative humidity. 11.2 storage store at a maximum temperature of 30 c in a nitrogen-purged cabinet or vacuum-sealed bag. observe all standard esd handling procedures. 12. dc characteristics fo r kgd devices at 145c specification value die dimensions 4.77 x 2.83 mm die thickness 500 m bond pad size 86 x 86 m pad area free of passivation 5,776 m 2 pads per die 74 bond pad metalization al/cu passivation si0 2 /sin item description location/data manufacturing location fab 25, tx test location png shipment preparation location penang, malaysia manufacturing id (bottom boot) s29cd016j 98p05ab s29cl016j 98p06ab fabrication process cs69s die revision 1 table 12.1 dc characteristics, cmos compatible parameter description test condition min typ max unit i cc1 v cc active asynchronous read current ce# = v il , oe#=v il 1 mhz 10 ma i cc3 v cc active program current ce# = v il , oe#=v ih , acc = v ih 40 50 ma i cc5 ( note 1 )v cc standby current (cmos) v cc = v ccmax , ce# = v cc 0.3 v 60 a i cc7 ( note 1 )v cc reset current reset = v il 60 a i cc8 ( note 1 ) automatic sleep mode current v ih = v cc 0.3 v, v il = vss 0.3 v 60 a i lo output leakage current v out = v ss to v c , v cc = v ccmax , 10 a
14 s29cd016j/s29cl016j known good die revision a3 march 9, 2009 supplement (preliminary) 13. terms and conditions of sale fo r spansion non-volatile memory die all transactions relating to unpackaged die under th is agreement shall be subject to spansion?s standard terms and conditions of sale, or any revisions thereof, which revisions spansion reserves the right to make at any time and from time to time. in the event of conf lict between the provisions of spansion?s standard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. spansion warrants its manufactured unpackaged die whether shipped to customer in individual dice or wafer form (?known good die,? ?kgd?, ?die,? ?known good wafer?, ?kgw?, or wafe r(s)) will meet spansion's published specifications and against defective materials or workmans hip for a period of one (1) year from date of shipment. this limited warranty does not extend beyond th e first purchaser of said die or wafer(s). buyer assumes full responsibility to ensure compliance with the appropriate handling, assembly and processing of kgd or kgw (including but not limited to proper die preparation, die attach, backgrinding, singulation, wire bonding and related assembly and te st activities), and compliance with all guidelines set forth in spansion's specifications for kgd or kgw, and spansion assumes no responsibility for environmental effects on kgd or kgw or for any activity of buyer or a third party that damages the die or wafer(s) due to improper use, abuse, negligence, im proper installation, improper backgrinding, improper singulation, accident, loss, damage in transit, or unaut horized repair or alteration by a person or entity other than spansion (?limited warranty exclusions?) the liability of spansion under this lim ited warranty is limited, at spansion's option, solely to repair the die or wafer(s), to send replacement die or wafer(s), or to make an appropriate credit adjustment or refund in an amount not to exceed the original purchase price actually paid for the die or wafer(s) returned to spansion, provided that: (a) spansion is promptly notified by buyer in writing during the applicable warranty period of any defect or nonconformity in the die or wafer(s); (b ) buyer obtains authorization from spansion to return the defective die or wafer(s); (c) the defective die or wafer(s) is returned to spansion by buyer in accordance with spansion's shipping instructions se t forth below; and (d) buyer shows to spansion's satisfaction that such alleged defect or nonconformity actually exists and was not caused by any of the above-referenced warranty exclusions. buyer shall ship such defective die or wafer(s) to spansion via spansion's carrier, collect. risk of loss will transfer to spansion when the defective die or wafer(s) is provided to spansion's carrier. if buyer fails to adhere to these warranty returns guidelines, buyer shall assume all risk of loss and shall pay for all freight to spansion's specified lo cation. the aforementioned provisions do not extend the original limited warranty period of any die or wafer(s) that has either been replaced by spansion. this limited warranty is expressed in lieu of all other warra nties, expressed or implied, including the implied warranty of fitness for a particular purpose, the implied warranty of merchantability or noninfringement and of all other obligations or liabilities on spansion's part, and it neither assumes nor authorizes any other person to assume for spansion any other li abilities. the foregoing constitutes the buyer's sole and exc lusive remedy for the furnishing of defective or non conforming known good di e or known good wafer(s) and spansion shall not in any event be liable for incr eased manufacturing costs, downtime costs, damages relating to buyer's procurement of substit ute die or wafer(s) (i.e., ?cost of cover?), loss of profits, revenues or goodwill, loss of use of ordamage to any associated equipment, or any ot her indirect, incidental, special or consequential damages by reason of the fa ct that such known good die or known good wafer(s) shall have been determined to be defective or non conforming. buyer agrees that it will make no warranty representatio ns to its customers which exceed those given by spansion to buyer unless and until buyer shall agree to indemnify spansion in writing for any claims which exceed spansion's limited warranty. known good die or known good wafer(s) are not designed or authorized for use as components in life support appli ances, devices or systems wher e malfunction of the die or wafer(s) can reasonably be expected to result in a personal injury. buyer's use of known good die or known good wafer(s) for use in life support applications is at buyer's own risk and buyer agrees to fully indemnify spansion for any damages resulting in such use or sale. known good die or known good wafer are not designed or authorized for use as components in life support appliances, devices or systems where malf unction of the die or wafer can re asonably be expected to result in a personal injury. buyer's use of known good die or know n good wafer for use in life support applications is at buyer's own risk and buyer agrees to fully indemnify spansion for any damages resulting in such use or sale.
march 9, 2009 revision a3 s29cd016j/s29cl016j known good die 15 supplement (preliminary) 14. revision summary colophon the products described in this document are designed, developed and manufactured as contemplated for general use, including wit hout limitation, ordinary industrial use, genera l office use, personal use, and household use, but are not designed, developed and m anufactured as contemplated (1) for any use that includes fatal risks or dangers t hat, unless extremely high safety is secured, could have a s erious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic contro l, mass transport control, medical life support system, missile launch control in we apon system), or (2) for any use where chance of failure is intole rable (i.e., submersible repeater and artifi cial satellite). please note that spansion will not be liable to section description revision a0 (december 23, 2005) initial release. revision a1 (august 16, 2006) die pad locations corrected die pad locations figure. revision a2 (september 20, 2006) global added s29cl016j information. deleted emboss tape packing type. deleted industrial and extended temperature ranges. revision a3 (march 9, 2009) global changed ?advanced information? to ?preliminary?. change all instances of v ccq to v io added electrical specifications paragraph to re fer to s29cd-j/s29cl-j product family data sheet for full electrical specifications. distinctive characteristics remove ?or without? (wr ap around) from programmable burst interface bullet performance characteristics updated read access times and standby mode current values to current. ordering information appended ?(40 mhz only)? to 4-1-1-1 option. corrected valid combinations table. waffle pack packaging corrected picture orientation. manufacturing information added manufacturing id for s29cl016j table dc characteristics, cmos compatible updated values for icc5, icc7, icc8. added new parameter ilo.
16 s29cd016j/s29cl016j known good die revision a3 march 9, 2009 supplement (preliminary) you and/or any third party for any claims or damages arising in connection with abo ve-mentioned uses of the products. any semic onductor devices have an inherent chance of failure. you must protect agains t injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. if any products described in this document r epresent goods or technologies s ubject to certain restriction s on export under the foreign exchange and foreign trade law of japan, the us export ad ministration regulations or the applicable laws of any oth er country, the prior authorization by the respective government entity will be required for export of those products. trademarks and notice the contents of this document are subjec t to change without notice. this document ma y contain information on a spansion product under development by spansion. spansion reserves the right to change or discontinue work on any product without notice. the informati on in this document is provided as is without warran ty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. spansion assume s no liability for any damages of any kind arising out of the use of the information in this document. copyright ? 2005?2009 spansion inc. all rights reserved. spansion ? , the spansion logo, mirrorbit ? , mirrorbit ? eclipse ? , ornand ? , ornand2 ? , hd-sim ? , ecoram ? and combinations thereof, are trademarks of spansi on llc in the us and other countries. other names used are for informational purposes only and ma y be trademarks of their respective owners.

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