?2011 fairchild semiconductor corporation 1 www.fairchildsemi.com fga90n33atd rev. c0 fga90n33atd 330v, 90a pdp trench igbt august 2011 absolute maximum ratings symbol description ratings units v ces collector to emitter voltage 330 v v ges gate to emitter voltage 30 v i c collector current @ t c = 25 o c 90 a i c pulse(1) pulsed collector current @ t c = 25 o c 220 a i c pulse(2) pulsed collector current @ t c = 25 o c 330 a p d maximum power dissipation @ t c = 25 o c 223 w maximum power dissipation @ t c = 100 o c 89 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c thermal characteristics symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case - 0.56 o c/w r jc (diode) thermal resistance, junction to case - 1.16 o c/w r ja thermal resistance, junction to ambient - 40 o c/w notes: (1) repetitive test , pulse width=100usec , duty=0.1 (2) half sine wave , d<0.01, pulse width<5usec *i c pluse limited by max tj fga90n33atd 33 0v, 90a pdp trench igbt g c e to-3p g c e features ? high current capability ? low saturation voltage: v ce(sat) = 1 .1v @ i c = 20a ? high input impedance ? fast switching ? rohs compliant applications ? pdp system general description using novel trench igbt technology , fairchild?s new series of trench igbts offer the optimum performance for pdp applica - tions where low conduction and swit ching losses are essential.
2 www.fairchildsemi.com fga90n33atd rev. c0 fga90n33atd 330v, 90a pdp trench igbt package marking and ordering information device marking device package packaging ty pe qty per tube max qty per box fga90n33atd fga90n33atdtu to-3p tube 30ea - electrical characteristi cs of the igbt t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 400 a 330 - - v i ces collector cut-off current v ce = v ces , v ge = 0v - - 400 a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 a, v ce = v ge 2.5 4.0 5.5 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v - 1.1 1.4 v i c = 45a , v ge = 15v, - 1. 3 - v i c = 90a , v ge = 15v, - 1. 6 - v i c = 90a , v ge = 15v, t c = 125 o c - 1. 7 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 2200 - pf c oes output capacitance - 135 - pf c res reverse transfer capacitance - 100 - pf switching characteristics t d(on) turn-on delay time v cc = 200v, i c = 20a, r g = 5 , v ge = 15v, resistive load, t c = 25 o c - 23 - ns t r rise time - 40 - ns t d(off) turn-off delay time - 100 - ns t f fall time - 180 240 ns t d(on) turn-on delay time v cc = 200v, i c = 20a, r g = 5 , v ge = 15v, resistive load, t c = 125 o c - 20 - ns t r rise time - 40 - ns t d(off) turn-off delay time - 110 - ns t f fall time - 250 300 ns q g total gate charge v ce = 200v, i c = 20a, v ge = 15v - 95 - nc q ge gate to emitter charge - 12 - nc q gc gate to collector charge - 40 - nc
3 www.fairchildsemi.com fga90n33atd rev. c0 fga90n33atd 330v, 90a pdp trench igbt electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max units v fm diode forward voltage i f = 10a t c = 25 o c - 1.1 1.5 v t c = 125 o c - 0.96 - t rr diode reverse recovery time i f =10a, di/dt = 200a/ s t c = 25 o c - 23 - ns t c = 125 o c - 36 - i rr diode peak reverse recovery current t c = 25 o c - 2.8 - a t c = 125 o c - 5.1 - q rr diode reverse recovery charge t c = 25 o c - 32 - nc t c = 125 o c - 91 -
4 www.fairchildsemi.com fga90n33atd rev. c0 fga90n33atd 330v, 90a pdp trench igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temp erature at variant current level 012345 0 40 80 120 160 7v 8v 9v 20v t c = 25 o c 15v 12v 10v v ge = 6v collector current, i c [a] collector-emitter voltage, v ce [v] 012345 0 40 80 120 160 9v 8v 7v 20v t c = 125 o c 15v 12v 10v v ge = 6v collector current, i c [a] collector-emitter voltage, v ce [v] 01234 0 40 80 120 160 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 024681012 0 40 80 120 160 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 0.8 1.0 1.2 1.4 1.6 1.8 2.0 90a 40a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ] 0 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 90a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
5 www.fairchildsemi.com fga90n33atd rev. c0 fga90n33atd 330v, 90a pdp trench igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. 0 4 8 121620 0 4 8 12 16 20 90a i c = 20a 40a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 0.1 1 10 0 1000 2000 3000 4000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 110100 0.01 0.1 1 10 100 500 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 10 p s 100 p s collector current, i c [a] collector-emitter voltage, v ce [v] 500 0 20406080100 0 3 6 9 12 15 common emitter t c = 25 o c 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 20406080100 10 100 1000 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ : ] 5500 0 20406080100 10 100 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ : ] 200 gate resistance gate resistance
6 www.fairchildsemi.com fga90n33atd rev. c0 fga90n33atd 330v, 90a pdp trench igbt typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs. collector current collector current figure 15. turn off switching soa characteristics switching time [ns] collector current, i c [a] 100 0 20406080100 10 100 common emitter v ge = 15v, r g = 15 : t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 400 110100 1 10 100 400 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 600 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 100 t j = 25 o c 200 t c = 25 o c t c = 125 o c t j = 125 o c forward voltage, v f [v] forward current, i f [a]
7 www.fairchildsemi.com fga90n33atd rev. c0 fga90n33atd 330v, 90a pdp trench igbt typical performance characteristics figure 17. reverse recovery current reverse recovery c urrnet, i rr [a] forward current, i f [a] 10 20 30 40 0 15 30 45 60 5 200a/ p s di/dt = 100a/ p s stored recovery charge, q rr [nc] forward current, i f [a] 10 20 30 40 10 20 30 40 5 200a/ p s di/dt = 100a/ p s reverse recovery time, t rr [ns] forward current, i f [a] 1e-5 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
8 www.fairchildsemi.com fga90n33atd rev. c0 fga90n33atd 330v, 90a pdp trench igbt mechanical dimensions to-3pn dimensions in millimeters
fga90n33atd 330v, 90a pdp trench igbt fga90n33atd rev.c0 www.fairchildsemi.com 9 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes withou t further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform wh en properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? auto-spm? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optihit? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? the right technology for your success? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * p serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? ? tm ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing de lays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i55
|
