absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -45* i d @ v gs = -12v, t c = 100c continuous drain current -30 i dm pulsed drain current ? -180 p d @ t c = 25c max. power dissipation 250 w linear derating factor 2.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 480 mj i ar avalanche current ? -45 a e ar repetitive avalanche energy ? 25 mj dv/dt p eak diode recovery dv/dt ? -6.0 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in./1.6mm from case for 10s) weight 9.3 ( typical ) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened irhms597160 power mosfet thru-hole (low-ohmic to-254aa) 08/05/02 www.irf.com 1 100v, p-channel technology product summary part number radiation level r ds(on) i d irhms597160 100k rads (si) 0.05 ? -45a* IRHMS593160 300k rads (si) 0.05 ? -45a* for footnotes refer to the last page features: single event effect (see) hardened neutron tolerant identical pre- and post-electrical test conditions repetitive avalanche ratings dynamic dv/dt ratings simple drive requirements ease of paralleling hermetically sealed electically isolated ceramic eyelets * current is limited by package low-ohmic to-254aa light weight pd - 94283a high electrical conductive package
irhms 597160 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? -45* i sm pulse source current (body diode) ? ? ? -180 v sd diode forward voltage ? ? -5.0 v t j = 25c, i s = -45a, v gs = 0v ? t rr reverse recovery time ? ? 200 ns t j = 25c, i f =-45a, di/dt -100a/ s q rr reverse recovery charge ? ? 1.6 cv dd -25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage -100 ? ? v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.13 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.05 ? v gs = -12v, i d = -30a resistance v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 24 ? ? s ( ) v ds > -15v, i ds = -30a ? i dss zero gate voltage drain current ? ? -10 v ds = -80v ,v gs =0v ? ? -25 v ds = -80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 170 v gs =-12v, i d = -45a q gs gate-to-source charge ? ? 65 nc v ds = -50v q gd gate-to-drain (?miller?) charge ? ? 30 t d (on) turn-on delay time ? ? 35 v dd = -50v, i d = -45a t r rise time ? ? 140 v gs =-12v, r g = 1.2 ? t d (off) turn-off delay time ? ? 70 t f fall time ? ? 45 l s + l d total inductance ? 6.8 ? measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 6110 ? v gs = 0v, v ds = -25v c oss output capacitance ? 1574 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 115 ? na ? ? nh ns a * current is limited by package note: corresponding spice and saber models are available on the g&s website. thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 0.6 r thcs case-to-sink ? 0.21 ? c/w r thja junction-to-ambient ? ? 48 typical socket mount
www.irf.com 3 pre-irradiation i rhms597160 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300krads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -100 ? -200 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs =-20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20 v i dss zero gate voltage drain current ? -10 ? -10 a v ds = -80v, v gs =0v r ds(on) static drain-to-source ? ? 0.05 ? 0.05 ? v gs = -12v, i d =-30a on-state resistance (to-3) r ds(on) static drain-to-source on-state ? 0.05 ? 0.05 ? v gs = -12v, i d =-30a resistance(low-ohmicto-254aa) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number irhms597160 2. part number IRHMS593160 fig a. single event effect, safe operating area v sd diode forward voltage ? ? -5.0 ? -5.0 v v gs = 0v, i s = -45a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page ? table 2. single event effect safe operating area ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =5v @v gs =10v @v gs =15v @v gs =17.5v br 37.9 252.6 33.1 -100 -100 -100 -100 -100 i 59.7 314 30.5 -100 -100 -100 -100 -75 au 82.3 350 28.4 -100 -100 -100 -30 ? -100 -25 ? @v gs =20v -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 25 vgs vds br i au
irhms 597160 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 10 100 1000 5.0 5.5 6.0 6.5 7.0 v = -50v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -45a
www.irf.com 5 pre-irradiation i rhms597160 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 240 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -45a v = -20v ds v = -50v ds v = -80v ds 0.1 1 10 100 1000 0.0 1.5 3.0 4.5 6.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 -v ds , drain-tosource voltage (v) 1 10 100 1000 -i d , drain-to-source current (a) tc = 25c tj = 150c single pulse 10ms operation in this area limited by r ds (on) 100s 1ms
irhms 597160 pre-irradiation 6 www.irf.com fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds v gs pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) -i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 pre-irradiation i rhms597160 fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit q g q gs q gd v g charge -12 v d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - -12v r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as v gs v dd + - 25 50 75 100 125 150 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -20a -28.5a -45a
irhms 597160 pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. - 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = - 25v, starting t j = 25c, l=0.48 mh peak i l = - 45a, v gs = -12v ? i sd - 45a, di/dt - 365a/ s, v dd - 100v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 08/02 case outline and dimensions ? low-omic to-254aa caution beryllia warning per mil-prf-19500 packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 0.12 [.005] 13.84 [.545] 13.59 [.535] 13.84 [.545] 13.59 [.535] 3.81 [.150] 2x 17.40 [.685] 16.89 [.665] a 1.14 [.045] 0.89 [.035] 0.36 [.014] b a 3x b 20.32 [.800] 20.07 [.790] 3.78 [.149] 3.53 [.139] 123 not e s : 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. all dime ns ions are s hown in mil lime t ers [inche s ]. 1 = drain 2 = s ource 3 = gat e pin as s ignme nt s 3. cont roll ing dimens ion: inch. 4. conforms to jedec outline to-254aa. 17.40 [.685] 16.89 [.665] 3.81 [.150] 0.84 [.033] max. c
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