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| T64 magna t65 t e c mechanical data dimensions in mm silicon darlington power 1 m 5.2 a x m 4.6 ax transistors 1 4 2.0 4.4 4.25 dia. 21. 0 complementary epitaxial base transistors in 4.15 max 12 m a .7 x monolithic darlington circuit for audio output 1 2 3 stages and general amplifier and switching applications. 13 mi . n 6 the T64 is pnp and the t65 is npn 1.15 0 4. 5.5 0.95 1 6. 11 sot 93 pin 1 ? base pin 2 ? collector pin 3 ? emitter absolute maximum ratings (t case = 25?c unless otherwise stated) T64 t65 v cbo collector ? base voltage (open emitter) ?120v 120v v ceo collector ? emitter voltage (open base) ?120v 120v v ebo emitter ? base voltage (open collector) ?5v 5v i c collector current (d.c) 12a i cm peak collector current 20a i b base current (d.c) 0.5a p tot total power dissipation up to t mb = 25?c 125w t stg storage temperature range ?65 to 150?c t j maximum junction temperature 150?c
T64 magna t65 t e c electrical characteristics (t j = 25?c unless otherwise stated) parameter test conditions min. typ. max. unit v be* base ? emitter voltage i c = 5a v ce = 4v 2.5 v v collector ? emitter i = 5a i = 20ma 2 v ce(sat)* saturation voltage c b i e = 0 v cb = v cbo(max) 400 ma i collector ? base i e = 0 v cb = v cbo(max) 2 cbo cut-off current t = 150?c ma j i b = 0 v cb = v cbo(max) 1 i ebo emitter cut-off current i c = 0 v eb = 5v 5 ma i c = 1a v ce = 4v 1500 h fe* dc current gain i c = 5a v ce = 4v 1000 ? i c = 10a v ce = 4v 1750 c collector capacitance i e = i e = 0 v cb = 10v 150 pf c f = 1 mhz f hfe cut-off frequency i c = 5a v ce = 4v 70 khz v diode forward voltage i f = 5a 1.2 v f i = 12a 2 f * pulse test t p < 300ms , d <2% switching characteristics (t case = 25?c unless otherwise stated) parameter test conditions min. typ. max. unit t on turn-on time i = 5a v = 16v 1 t fall time c(on) cc 3 ms f i = ? i = 20ma t turn-off time b(on) b(off) 6 off thermal data r thj?mb thermal resistance junction ? mounting base max. 1 k / w c b r1 r2 r1 typical 5k ? e r2 typical 80 ? |
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