? semiconductor components industries, llc, 2011 april, 2011 ? rev. 11 1 publication order number: mkp1v120/d mkp1v120 series sidac high voltage bidirectional triggers bidirectional devices designed for direct interface with the ac power line. upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on ? state. conduction will continue like a triac until the main terminal current drops below the holding current. the plastic axial lead package provides high pulse current capability at low cost. glass passivation insures reliable operation. features ? high pressure sodium vapor lighting ? strobes and flashers ? ignitors ? high voltage regulators ? pulse generators ? used to trigger gates of scr?s and triacs ? indicates ul registered ? file #e116110 ? these are pb ? free devices* maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive off ? state v oltage (sine wave, 50 to 60 hz, t j = ? 40 to 125 c) mkp1v120, mkp1v130, mkp1v160 mkp1v240 v drm , v rrm 90 180 v on-state current rms (t l = 80 c, lead length = 3/8 , all conduction angles) i t(rms) 0.9 a peak non ? repetitive surge current (60 hz one cycle sine wave, t j = 125 c) i tsm 4.0 a operating junction temperature range t j ? 40 to +125 c storage temperature range t stg ? 40 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? lead lead length = 3/8 r jl 40 c/w lead solder temperature (lead length 1/16 from case, 10 s max) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. sidacs 0.9 amperes rms 120 ? 240 volts mt1 mt2 () http://onsemi.com axial lead case 59 style 2 marking diagram a = assembly location mkp1vxx0 = device number x= 12, 13, 16 or 24 yy = year ww = work week =pb ? free package a mkp 1vxx0 yyww (note: microdot may be in either location) see detailed ordering and shipping information on page 2 of this data sheet. ordering information
mkp1v120 series http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted; electricals apply in both directions) characteristic symbol min typ max unit off characteristics repetitive peak off ? state current t j = 25 c (50 to 60 hz sine wave) v drm = 90 v, mkp1v120, mkp1v130 and mkp1v160 v drm = 180 v, mkp1v240 i drm ? ? 5.0 a on characteristics breakover voltage i bo = 35 a mkp1v120 35 a mkp1v130 200 a mkp1v160 35 a mkp1v240 v bo 110 120 150 220 ? ? ? ? 130 140 170 250 v peak on ? state voltage (i tm = 1 a peak, pulse width 300 s, duty cycle 2%) v tm ? 1.3 1.5 v dynamic holding current (sine wave, 50 to 60 hz, r l = 100 ohm) i h ? ? 100 ma switching resistance (sine wave, 50 to 60 hz) r s 0.1 ? ? k dynamic characteristics critical rate ? of ? rise of on ? state current, critical damped waveform circuit (i pk = 130 amps, pulse width = 10 sec) di/dt ? 120 ? a/ s ordering information device package * shipping ? mkp1v120rlg do ? 41, axial lead 5000 / tape & reel mkp1v130rlg 5000 / tape & reel mkp1v160g 1000 units / bulk mkp1v160rlg 5000 / tape & reel mkp1v240g 1000 units / bulk MKP1V240RLG 5000 / tape & reel *this package is inherently pb ? free. ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mkp1v120 series http://onsemi.com 3 + current + voltage v tm i h symbol parameter i drm off state leakage current v drm off state repetitive blocking voltage v bo breakover voltage i bo breakover current i h holding current v tm on state voltage i tm peak on state current voltage current characteristic of sidac v drm i drm i tm slope = r s v (bo) r s (v (bo) ?v s ) (i s ?i (bo) ) i (bo) i s v s (bidirectional device) 0.8 0 i t(rms) , on-state current (amps) 140 120 40 t a , maximum ambient temperature ( c) 0.4 2.0 3.0 0 v t , instantaneous on-state voltage (volts) 0.3 0.5 0.2 0.1 1.0 t 4.0 0.2 0.6 i 100 0.7 1.0 130 , maximum allowable lead temperature ( c) l 100 0 1.0 0.6 0.2 40 i 20 60 0.4 0.8 , on-state current (amps) t(rms) 0.2 0.6 0 i t(rms) , on-state current (amps) 0.50 0.75 0.25 0.4 0.8 p 1.00 1.25 t j = 25 c conduction angle = 180 c 1.6 1.2 1.0 1.4 2.0 1.8 110 90 80 60 70 50 80 120 140 5.0 3.0 5.0 2.0 7.0 10 , instantaneous on-state current (amps) t 1.0 , power dissipation (watts) rms t j = 25 c 125 c t j = 125 c sine wave conduction angle = 180 c assembled in pcb lead length = 3 / 8 t j = 125 c sine wave conduction angle = 180 c t l 3 / 8 3 / 8 figure 1. maximum lead temperature figure 2. maximum ambient temperature figure 3. typical on ? state voltage figure 4. typical power dissipation
mkp1v120 series http://onsemi.com 4 thermal characteristics figure 5. thermal response t, time (ms) 10 0.1 0.07 0.03 0.02 0.01 5.0 0.2 0.5 1.0 2.0 0.05 0.1 0.2 r(t), transient thermal resistance (normalized) 0.3 0.5 0.7 1.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k the temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + t jl z jl (t) = r jl ? r(t) t jl = p pk r jl [r(t)] where: t jl = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. for example, r(t p ) = normalized value of transient resistance at time t p . time t p figure 6. typical breakover voltage figure 7. typical holding current figure 8. pulse rating curve t j , junction temperature ( c) -60 0.8 0.4 100 0.1 t w , pulse width (ms) 100 10 1.0 i -40 -20 100 140 0.6 1.0 1.2 10 t j , junction temperature ( c) 100 -60 0.9 0.8 v 40 -40 -20 0 20 1.0 1.4 , breakover voltage (normalized) bo 1.0 i pk , peak current (amps) 80 60 120 140 , holding current (normalized) h 120 80 060 40 20 10% tw i pk
mkp1v120 series http://onsemi.com 5 package dimensions b d k k f f a dim min max min max millimeters inches a 4.10 5.20 0.161 0.205 b 2.00 2.70 0.079 0.106 d 0.71 0.86 0.028 0.034 f ??? 1.27 ??? 0.050 k 25.40 ??? 1.000 ??? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with jedec do ? 41 outline shall apply 4. polarity denoted by cathode band. 5. lead diameter not controlled within f dimension. axial lead case 59 ? 10 issue u style 2: no polarity polarity indicator optional as needed (see styles) on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mkp1v120/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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