2sK2936 silicon n channel mos fet high speed power switching ade-208-559b (z) 3rd. edition jun 1998 features low on-resistance r ds =0.010 w typ. high speed switching 4v gate drive device can be driven from 5v source outline 1 2 3 1. gate 2. drain 3. source to?20cfm d g s www.datasheet.co.kr datasheet pdf - http://www..net/
2sK2936 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current i d 45 a drain peak current i d(pulse) note1 180 a body-drain diode reverse drain current i dr 45 a avalanche current i ap note3 45 a avalanche energy e ar note3 173 mj channel dissipation pch note2 35 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c note: 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c 3. value at tch = 25 c, rg 3 50 w www.datasheet.co.kr datasheet pdf - http://www..net/
2sK2936 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 60v i d = 10ma, v gs = 0 gate to source breakdown voltage v (br)gss 20v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 16v, v ds = 0 zero gate voltege drain current i dss 10 m av ds = 60 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.5 2.5 v i d = 1ma, v ds = 10v static drain to source on state r ds(on) 0.010 0.013 w i d = 20a, v gs = 10v note4 resistance r ds(on) 0.015 0.025 w i d = 20a, v gs = 4v note4 forward transfer admittance |y fs | 2440 s i d = 20a, v ds = 10v note4 input capacitance ciss 2200 pf v ds = 10v output capacitance coss 1050 pf v gs = 0 reverse transfer capacitance crss 320 pf f = 1mhz turn-on delay time t d(on) 25 ns i d = 20a, v gs = 10v rise time t r 200 ns v gs = 10v, i d = 20a turn-off delay time t d(off) 320 ns r l = 1.5 w fall time t f 240 ns body?rain diode forward voltage v df 0.95 v i f = 45a, v gs = 0 body?rain diode reverse recovery time t rr 60 ns i f = 45a, v gs = 0 dif/ dt =50a/ m s note: 4. pulse test www.datasheet.co.kr datasheet pdf - http://www..net/
2sK2936 4 main characteristics 40 30 20 10 0 50 100 150 200 50 40 30 20 10 0 10 v 2 46810 6 v 50 40 30 20 10 0 12345 0.1 0.3 1 3 10 30 100 1000 300 100 30 10 3 1 0.3 0.1 dc operation (tc = 25?) ta = 25 ? 10 ? 100 ? 1 ms pw = 10 ms (1shot) 3.5 v 4 v 5 v 3 v v = 2.5 v gs tc = 75? 25? ?5? pulse test v = 10 v ds pulse test channel dissipation pch (w) case temperature tc (?) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d maximum safe operation area drain to source voltage v (v) ds drain current i (a) d typical output characteristics gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics operation in this area is limited by r ds(on) www.datasheet.co.kr datasheet pdf - http://www..net/
2sK2936 5 0.5 0.4 0.3 0.2 0.1 0 48 12 16 20 40 32 24 16 8 ?0 0 40 80 120 160 0 v = 4 v gs 10 v 5, 10, 20 a 0.1 0.3 1 3 10 30 100 500 100 200 20 50 10 2 5 1 0.5 25 ? tc = ?5 ? 75 ? i = 20 a d 10 a 5 a 1 5 20 100 210 50 100 20 1 5 2 10 50 v = 4 v gs 10 v i = 20 a d 10 a 5 a pulse test pulse test pulse test ds v = 10 v pulse test gate to source voltage v (v) gs drain to source saturation voltage vs. gate to source voltage v (v) ds(on) drain to source saturation voltage drain current i (a) d static drain to source on state resistance vs. drain current case temperature tc (?) static drain to source on state resistance static drain to source on state resistance vs. temperature drain current i (a) d forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current drain to source on state resistance r (m ) w ds(on) r (m ) w ds(on) www.datasheet.co.kr datasheet pdf - http://www..net/
2sK2936 6 0.1 0.3 1 3 10 30 100 01020304050 10000 2000 5000 1000 100 200 500 100 80 60 40 20 0 20 16 12 8 4 40 80 120 160 200 0 0.1 0.2 1 2 10 20 100 i = 45 a d v gs v ds v = 50 v 25 v 10 v dd 100 20 50 10 di / dt = 50 a / ? v = 0, ta = 25 ? gs 50 v = 0 f = 1 mhz gs ciss coss crss v = 10 v 25 v 50 v dd 1000 200 500 100 20 10 50 0.5 5 50 v = 10 v, v = 30 v pw = 10 ?, duty < 1 % gs dd t f r t d(on) t d(off) t reverse drain current i (a) dr reverse recovery time trr (ns) body?rain diode reverse recovery time capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs dynamic input characteristics drain current i (a) d switching time t (ns) switching characteristics www.datasheet.co.kr datasheet pdf - http://www..net/
2sK2936 7 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 200 160 120 80 40 25 50 75 100 125 150 0 i = 45 a v = 25 v duty < 0.1 % rg > 50 ap dd w d. u. t rg i monitor ap v monitor ds v dd 50 w vin 15 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 v = 0, ? v gs 10 v 5 v pulse test channel temperature tch (?) repetitive avalanche energy e (mj) ar maximum avalanche energy vs. channel temperature derating source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. source to drain voltage avalanche test circuit avalanche waveform www.datasheet.co.kr datasheet pdf - http://www..net/
2sK2936 8 vin monitor d.u.t. vin 10 v r l v = 30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 w 90% 10% t f 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 3.57 ?/w, tc = 25 ? q g q q tc = 25? d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse switching time test circuit waveform pulse width pw (s) normalized transient thermal impedance s (t) g normalized transient thermal impedance vs. pulse width www.datasheet.co.kr datasheet pdf - http://www..net/
2sK2936 9 package dimentions unit: mm 10.0 ?0.3 1.0 ?0.2 1.15 ?0.2 0.6 ?0.1 2.54 ?0.5 2.54 ?0.5 4.1 ?0.3 12.0 ?0.3 2.7 ?0.2 4.5 ?0.3 0.7 ?0.1 13.6 ?1.0 15.0 ?0.3 3.2 ?0.2 f 2.5 ?0.2 hitachi code eiaj jedec to?20cfm www.datasheet.co.kr datasheet pdf - http://www..net/
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