symbol units v ds v v gs v t a =25c t a =70c i dm v ka v t a =25c t a =70c i fm t a =25c t a =70c t j , t stg c symbol units 67 thermal characteristics schottky maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state 47 87 36 c/w maximum junction-to-ambient a steady-state maximum junction-to-ambient a t 10s r ja 35 65 45 85 parameter: thermal characteristics mosfet typ max w 0.95 0.92 junction and storage temperature range -55 to 150 -55 to 150 power dissipation p d 1.5 1.45 a 1.5 pulsed forward current b 15 schottky reverse voltage 20 continuous forward current a i f 2.5 a -2.3 pulsed drain current b -15 continuous drain current a i d -3 drain-source voltage -20 gate-source voltage 8 absolute maximum ratings t a =25c unless otherwise noted parameter mosfet schottky AON2701 features v ds (v) = -20v i d = -3a (v gs = -4.5v) r ds(on) < 120m ? (v gs = -4.5v) r ds(on) < 160m ? (v gs = -2.5v) r ds(on) < 200m ? (v gs = -1.8v) the AON2701/l uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for dc-dc conversion applications. AON2701 and AON2701l are electrically identical. -rohs compliant -halogen free* k a d s g dfn 2x2 package top bottom anc d s kg kd p-channel enhancement mode field effect transistor with schottky diode general description www.freescale.net.cn 1 / 6
symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 100 na v gs(th) -0.3 -0.5 -1 v i d(on) -15 a 100 120 t j =125c 135 170 128 160 m ? 160 200 m ? g fs 6s v sd -0.76 -1 v i s -1.1 a c iss 540 700 pf c oss 90 pf c rss 63 pf r g 9.5 13 ? q g 5 6.5 nc q gs 1.2 nc q gd 1nc t d(on) 5ns t r 40 ns t d(off) 28.5 ns t f 46 ns t rr 21 28 ns q rr 9.1 nc schottky parameters v f 0.4 0.45 v 0.05 10 0.1 20 c t 34 pf t rr 11 14 ns q rr 0.8 nc ma v r =5v, t j =125c ma v r =16v, t j =125c i rm body diode reverse recovery time i f =-3a, di/dt=100a/ s body diode reverse recovery charge i f =-3a, di/dt=100a/ s i rm maximum reverse leakage current v r =5v junction capacitance v r =10v forward voltage drop i f =1a maximum reverse leakage current v r =16v turn-on delaytime v gs =-4.5v, v ds =-10v, r l =1.5 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-3a gate source charge gate drain charge maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =-10v, f=1mhz output capacitance reverse transfer capacitance forward transconductance v ds =-5v, i d =-3a diode forward voltage i s =-1a,v gs =0v m ? v gs =-2.5v, i d =-2.6a v gs =-1.8v, i d =-1.5a on state drain current v gs =-4.5v, v ds =-5v r ds(on) static drain-source on-resistance v gs =-4.5v, i d =-3a v ds =0v, v gs =8v drain-source breakdown voltage i d =-250 a, v gs =0v gate threshold voltage v ds =v gs i d =-250 a gate-body leakage current i dss zero gate voltage drain current v ds =-20v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters ? schottky reverse recovery time i f =1a, di/dt=100a/ s schottky reverse recovery charge i f =1a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value i n any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. *this device is guaranteed green after data code 7111 (oct 15 2007). rev5: march, 2010 AON2701 p-channel enhancement mode field effect transistor with schottky diode www.freescale.net.cn 2 / 6
typical electrical and thermal characteristics: mosfet -15 12 0 3 6 9 12 15 01234 -v ds (volts) figure 1: on-region characteristics -i d (a) v gs =-1.5v -2.5v -4.5v -3.0v -2.0v 0 3 6 9 12 15 01234 -v gs (volts) figure 2: transfer characteristics -i d (a) 25c 125c v ds =-5v 80 120 160 200 240 280 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =-1.8v v gs =-2.5v v gs =-4.5v 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.7 0.9 1.1 1.3 1.5 -50 -25 0 25 50 75 100 125 150 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-1.8v i d =-1.5a v gs =-4.5v i d =-3a v gs =-2.5v i d =-2.6a 80 120 160 200 240 280 320 02468 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =-3a 25c 125c AON2701 p-channel enhancement mode field effect transistor with schottky diode www.freescale.net.cn 3 / 6
typical electrical and thermal characteristics: mosfet -15 12 0 1 2 3 4 5 0123456 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 1 10 100 1000 10000 0.000001 0.0001 0.01 1 100 10000 pulse width (s) figure 10: single pulse power rating junction-t o ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance (note e) z ja normalized transient thermal resistance v ds =-10v i d =-3a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =85c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t a =25c 100 10s 0 100 200 300 400 500 600 700 800 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss AON2701 p-channel enhancement mode field effect transistor with schottky diode www.freescale.net.cn 4 / 6
typical electrical and thermal characteristics: schottky -15 12 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 v f (v) figure 12: schottky forward characteristics i f (amps) 25c 125c 0.01 0.1 1 10 0 25 50 75 100 125 150 temperature (c) figure 15: schottky leakage current vs. junction temperature leakage current (ma) v ka =16v v ka =20v 0.0001 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: schottky normalized maximum transient thermal impedance (note e) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =87c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.24 0.27 0.30 0.33 0.36 0.39 0.42 0 25 50 75 100 125 150 temperature (c) v f (volts) figure 14: schottky forward drop vs. junction temperature i f =1a i f =0.5a 0 40 80 120 160 200 0 5 10 15 20 v ka (volts) figure 13: schottky capacitance characteristics capacitance (pf) AON2701 p-channel enhancement mode field effect transistor with schottky diode www.freescale.net.cn 5 / 6
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds tt t t t t 90% 10% r on d(off) f off d(on) AON2701 p-channel enhancement mode field effect transistor with schottky diode www.freescale.net.cn 6 / 6
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